MXPA05005676A - Sensor magnetico y metodo para compensar la caracteristica dependiente de la temperatura del sensor magnetico. - Google Patents

Sensor magnetico y metodo para compensar la caracteristica dependiente de la temperatura del sensor magnetico.

Info

Publication number
MXPA05005676A
MXPA05005676A MXPA05005676A MXPA05005676A MXPA05005676A MX PA05005676 A MXPA05005676 A MX PA05005676A MX PA05005676 A MXPA05005676 A MX PA05005676A MX PA05005676 A MXPA05005676 A MX PA05005676A MX PA05005676 A MXPA05005676 A MX PA05005676A
Authority
MX
Mexico
Prior art keywords
elements
magnetic sensor
vicinity
heating coil
heating
Prior art date
Application number
MXPA05005676A
Other languages
English (en)
Inventor
Hideki Sato
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of MXPA05005676A publication Critical patent/MXPA05005676A/es

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C17/00—Compasses; Devices for ascertaining true or magnetic north for navigation or surveying purposes
    • G01C17/38—Testing, calibrating, or compensating of compasses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0064—Arrangements or instruments for measuring magnetic variables comprising means for performing simulations, e.g. of the magnetic variable to be measured
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

Un sensor magnetico 10 incluye elementos GMR 11-18 y bobinas termicas 21-24 que sirven como elementos generadores de calor. Los elementos 11-14 y 15-18 se encuentran interconectados en puente para constituir sensores en el eje X y en el eje Y, respectivamente. Las bobinas termicas 21, 22, 23, y 24 se encuentran colocadas adyacentes a los elementos 11 y 12, a los elementos 13 y 14, a los elementos 15 y 16, y a los elementos 17, y 18, respectivamente. Las bobinas termicas 21-24, cuando son activadas electricamente, calientan principalmente los elementos adyacentes. Por lo tanto, los elementos pueden ser calentados y enfriados en un periodo corto en el cual se puede asegurar un geomagnetismo constante. Datos para la compensacion de la caracteristica dependiente de la temperatura (relacion del cambio en el valor de salida del sensor, con respecto a la variacion de la temperatura del elemento) se obtiene en base a las temperaturas de los elementos, antes y despues del calentamiento, y las salidas del sensor magnetico antes y despues del calentamiento. Subsecuentemente, las caracteristicas de temperatura de los elementos son compensadas en base a los datos. La figura mas representativa de la invencion es la numero 1.
MXPA05005676A 2002-11-29 2002-11-29 Sensor magnetico y metodo para compensar la caracteristica dependiente de la temperatura del sensor magnetico. MXPA05005676A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/012476 WO2004051298A1 (ja) 2002-11-29 2002-11-29 磁気センサ、及び磁気センサの温度依存特性補償方法

Publications (1)

Publication Number Publication Date
MXPA05005676A true MXPA05005676A (es) 2005-10-18

Family

ID=32375632

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA05005676A MXPA05005676A (es) 2002-11-29 2002-11-29 Sensor magnetico y metodo para compensar la caracteristica dependiente de la temperatura del sensor magnetico.

Country Status (14)

Country Link
US (5) US7053607B2 (es)
EP (2) EP1566649B1 (es)
JP (1) JP4333582B2 (es)
CN (3) CN1695066A (es)
AT (1) ATE495458T1 (es)
AU (1) AU2002349615B2 (es)
BR (1) BR0215939A (es)
CA (1) CA2507819C (es)
DE (1) DE60238951D1 (es)
HK (1) HK1080148A1 (es)
MX (1) MXPA05005676A (es)
RU (3) RU2303791C2 (es)
TW (1) TWI251083B (es)
WO (1) WO2004051298A1 (es)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100370580C (zh) 2004-03-29 2008-02-20 雅马哈株式会社 半导体晶片及其制造方法
JP5055704B2 (ja) * 2004-03-29 2012-10-24 ヤマハ株式会社 半導体装置の製造方法
KR100601956B1 (ko) * 2004-06-28 2006-07-14 삼성전자주식회사 자기장의 변화를 이용한 온도측정장치
JP4023476B2 (ja) * 2004-07-14 2007-12-19 日立金属株式会社 スピンバルブ型巨大磁気抵抗効果素子を持った方位計
DE102004043737A1 (de) * 2004-09-09 2006-03-30 Siemens Ag Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung
KR100882051B1 (ko) * 2004-10-07 2009-02-09 야마하 가부시키가이샤 온도 센서 및 온도 센서의 보정 방법
US7437257B2 (en) * 2004-10-07 2008-10-14 Yamaha Corporation Geomagnetic sensor and geomagnetic sensor correction method, temperature sensor and temperature sensor correction method, geomagnetism detection device
JP4945995B2 (ja) * 2004-10-12 2012-06-06 ヤマハ株式会社 地磁気検出装置
KR100768919B1 (ko) * 2004-12-23 2007-10-19 삼성전자주식회사 전원 생성 장치
EP1860451B1 (en) * 2005-03-17 2012-06-27 Yamaha Corporation 3-axis magnetic sensor and manufacturing method thereof
WO2006098367A1 (ja) 2005-03-17 2006-09-21 Yamaha Corporation 磁気センサ及びその製造方法
KR100771861B1 (ko) * 2005-05-26 2007-11-01 삼성전자주식회사 하드디스크 드라이브에 구비된 ｍｒ센서의 도메인 특성개선 방법 및 이에 적합한 프로그램을 기록한 기록 매체
JP4857628B2 (ja) * 2005-07-12 2012-01-18 ヤマハ株式会社 磁気センサモジュールの検査方法
JP4624227B2 (ja) * 2005-09-29 2011-02-02 京セラ株式会社 通信端末、移動体通信システム及び通信制御方法
US7511990B2 (en) * 2005-09-30 2009-03-31 Everspin Technologies, Inc. Magnetic tunnel junction temperature sensors
EP1832888B1 (en) * 2006-03-09 2009-06-17 Teradyne, Inc. V/I source and test system incorporating the same
US20080013298A1 (en) * 2006-07-14 2008-01-17 Nirmal Sharma Methods and apparatus for passive attachment of components for integrated circuits
JP4904352B2 (ja) * 2006-07-26 2012-03-28 アルプス電気株式会社 磁気センサ
US7633039B2 (en) * 2006-08-31 2009-12-15 Infineon Technologies Ag Sensor device and a method for manufacturing the same
US8192080B2 (en) * 2007-01-23 2012-06-05 Tsi Technologies Llc Microwire-controlled autoclave and method
WO2008114615A1 (ja) * 2007-03-20 2008-09-25 Alps Electric Co., Ltd. 磁気抵抗効果素子を用いた位置検知装置
US8538318B2 (en) * 2007-04-23 2013-09-17 Pure Imagination, LLC Apparatus and methods for an interactive electronic book system
US7825656B2 (en) 2007-05-30 2010-11-02 Infineon Technologies Ag Temperature compensation for spaced apart sensors
US8989779B1 (en) * 2007-10-26 2015-03-24 Cellco Partnership Venue-based device control and determination
JP4308318B2 (ja) * 2007-11-08 2009-08-05 株式会社三協電機 車両検知方法、車両検知装置及び車両検知ユニット
CN102356328B (zh) * 2009-03-26 2014-04-02 爱知制钢株式会社 磁检测装置
US20110267048A1 (en) * 2010-04-29 2011-11-03 Alexandre Bratkovski Magnetically sensitive devices
IT1402178B1 (it) 2010-09-09 2013-08-28 St Microelectronics Srl Circuito di lettura a compensazione automatica dell'offset per un sensore di campo magnetico e relativo metodo di lettura a compensazione automatica dell'offset
US10473731B2 (en) 2010-11-26 2019-11-12 Stmicroelectronics S.R.L. Magnetic sensor reading device, system and method
CN102297652B (zh) * 2011-03-03 2012-12-05 江苏多维科技有限公司 一种独立封装的磁电阻角度传感器
CN202230192U (zh) * 2011-03-03 2012-05-23 江苏多维科技有限公司 推挽桥式磁电阻传感器
JP5397496B2 (ja) * 2011-05-30 2014-01-22 株式会社デンソー 磁気センサ装置およびその製造方法
US9024632B2 (en) 2011-05-30 2015-05-05 Denso Corporation Magnetic sensor with a plurality of heater portions to fix the direction of magnetization of a pinned magnetic layer
RU2478219C1 (ru) * 2011-10-11 2013-03-27 федеральное государственное бюджетное учреждение "Научно-производственный комплекс "Технологический центр "МИЭТ" Профилированный магниторезистивный микрочип биосенсорного устройства
US9395391B2 (en) * 2013-03-15 2016-07-19 Allegro Microsystems, Llc Magnetic field sensor and associated method that can store a measured threshold value in a memory device during a time when the magnetic field sensor is powered off
US9046556B2 (en) * 2012-06-14 2015-06-02 Freescale Semiconductor Inc. Sensing device and related operating methods
US9651981B2 (en) * 2012-08-09 2017-05-16 Infineon Technologies Austria Ag Integrated chip with heating element and reference circuit
JP6089572B2 (ja) * 2012-10-18 2017-03-08 ヤマハ株式会社 磁気抵抗効果素子のリセット回路
CN103997341B (zh) * 2013-02-16 2017-12-19 苏州市灵矽微系统有限公司 一种应用于地磁测量的高精度adc及其模拟前端电路
CN103267520B (zh) * 2013-05-21 2016-09-14 江苏多维科技有限公司 一种三轴数字指南针
US9671486B2 (en) * 2013-06-18 2017-06-06 Infineon Technologies Ag Sensors, systems and methods for compensating for thermal EMF
JP6344908B2 (ja) * 2013-12-03 2018-06-20 日本電産サンキョー株式会社 センサ装置およびセンサ装置での温度制御方法
RU2563600C1 (ru) * 2014-07-29 2015-09-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" Сверхчувствительный интеллектуальный магнитоимпедансный датчик с расширенным диапазоном рабочих температур
EP3023803B1 (en) * 2014-11-19 2020-03-18 Crocus Technology S.A. MLU cell for sensing an external magnetic field and a magnetic sensor device comprising the MLU cell
DE102015206840A1 (de) * 2015-04-16 2016-10-20 Bayerische Motoren Werke Aktiengesellschaft Thermisch überwachte Ladevorrichtung
JP6619974B2 (ja) * 2015-08-28 2019-12-11 日本電産サンキョー株式会社 エンコーダ
JP6634277B2 (ja) * 2015-12-04 2020-01-22 日本電産サンキョー株式会社 位置検出装置
RU2610932C1 (ru) * 2015-12-10 2017-02-17 Акционерное общество "Раменское приборостроительное конструкторское бюро" Способ определения температурных характеристик трёхкомпонентного магнитометра и устройство для его осуществления
CN110345971B (zh) * 2015-12-14 2021-12-14 英飞凌科技股份有限公司 具有热电动势补偿的传感器布置
CN205581283U (zh) * 2016-04-11 2016-09-14 江苏多维科技有限公司 一种具有初始化线圈封装的磁电阻传感器
JP6808565B2 (ja) * 2017-04-07 2021-01-06 ルネサスエレクトロニクス株式会社 半導体装置、それを備えた電子回路、及び、半導体装置の形成方法
CN110582705A (zh) * 2017-05-01 2019-12-17 小利兰·斯坦福大学托管委员会 用于在gmr生物传感器阵列上进行准确的温度测量的方法
JP6620796B2 (ja) * 2017-07-28 2019-12-18 Tdk株式会社 オフセット推定装置および方法、磁気センサの補正装置ならびに電流センサ
DE102017220684A1 (de) * 2017-11-20 2019-05-23 Robert Bosch Gmbh Detektion der Funktionsfähigkeit eines Aktuators mittels einem Mobilgerät
CN111433620B (zh) * 2017-12-04 2022-06-28 株式会社村田制作所 磁传感器
CN109368587A (zh) * 2018-10-30 2019-02-22 杭州士兰集成电路有限公司 地磁传感器件及其制造方法
DE102019101931A1 (de) * 2019-01-25 2020-07-30 Tdk-Micronas Gmbh Sensorvorrichtung
CN109941956B (zh) * 2019-02-25 2021-11-12 潍坊歌尔微电子有限公司 Mems传感器及电子设备
CN110345938B (zh) * 2019-06-25 2021-08-31 潍坊歌尔微电子有限公司 一种晶圆级的磁传感器及电子设备
RU193375U1 (ru) * 2019-07-16 2019-10-28 федеральное государственное бюджетное образовательное учреждение высшего образования "Ивановский государственный энергетический университет имени В.И. Ленина" (ИГЭУ) Датчик внешнего магнитного поля
US11367830B2 (en) * 2020-09-08 2022-06-21 Allegro Microsystems, Llc Multi-layer integrated circuit with enhanced thermal dissipation using back-end metal layers
US11598830B1 (en) 2022-03-04 2023-03-07 Allegro Microsystems, Llc TMR assembly having a heat sink
CN117615635A (zh) * 2022-08-22 2024-02-27 迈来芯电子科技有限公司 磁传感器器件以及生产磁传感器器件的方法
CN115628322B (zh) * 2022-10-26 2023-05-16 南京市锅炉压力容器检验研究院 一种易熔合金塞的智能控制方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59159565A (ja) * 1983-03-02 1984-09-10 Sankyo Seiki Mfg Co Ltd 磁気検出装置
JPS63193866A (ja) 1987-02-05 1988-08-11 Matsushita Electric Ind Co Ltd 印字装置
JPS63193866U (es) * 1987-05-29 1988-12-14
SU1663588A1 (ru) * 1989-01-02 1991-07-15 Ю.М.П тин Устройство дл регистрации термомагнитных характеристик
JPH03221810A (ja) 1990-01-26 1991-09-30 Sumitomo Electric Ind Ltd オフセット補正機能を有する方位検出装置
JP2869910B2 (ja) 1992-08-28 1999-03-10 株式会社村田製作所 磁気センサ装置
JPH06232478A (ja) * 1993-02-05 1994-08-19 Toyota Autom Loom Works Ltd 半導体装置
JPH06275887A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 磁気抵抗素子
US5351003A (en) * 1993-04-02 1994-09-27 General Motors Corporation Temperature compensated magnetoresistive position sensor
DE4436876A1 (de) 1994-10-15 1996-04-18 Lust Antriebstechnik Gmbh Sensorchip
US5561368A (en) 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
JPH08139230A (ja) * 1994-11-11 1996-05-31 Sumitomo Kinzoku Ceramics:Kk セラミック回路基板とその製造方法
DE19649265C2 (de) * 1996-11-28 2001-03-15 Inst Physikalische Hochtech Ev GMR-Sensor mit einer Wheatstonebrücke
DE19742366C1 (de) 1997-09-25 1999-05-27 Siemens Ag Einrichtung mit magnetoresistivem Sensorelement und zugeordneter Magnetisierungsvorrichtung
JPH11287668A (ja) 1998-02-04 1999-10-19 Denso Corp 増幅回路及びそれを用いた位置検出装置
JP2001183433A (ja) * 1999-12-24 2001-07-06 Teikoku Tsushin Kogyo Co Ltd 磁気抵抗効果素子
DE10118650A1 (de) 2001-04-14 2002-10-17 Philips Corp Intellectual Pty Winkelsensor sowie Verfahren zum Erhöhen der Anisotropiefeldstärke einer Sensoreinheit eines Winkelsensors
JP3835354B2 (ja) 2001-10-29 2006-10-18 ヤマハ株式会社 磁気センサ
JP2004070543A (ja) * 2002-08-05 2004-03-04 Rohm Co Ltd ポインティング制御回路付き磁気センサ

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