ATE495458T1 - Magnetsensor und verfahren zur kompensation temperaturabhängiger eigenschaften desselben - Google Patents
Magnetsensor und verfahren zur kompensation temperaturabhängiger eigenschaften desselbenInfo
- Publication number
- ATE495458T1 ATE495458T1 AT02783685T AT02783685T ATE495458T1 AT E495458 T1 ATE495458 T1 AT E495458T1 AT 02783685 T AT02783685 T AT 02783685T AT 02783685 T AT02783685 T AT 02783685T AT E495458 T1 ATE495458 T1 AT E495458T1
- Authority
- AT
- Austria
- Prior art keywords
- elements
- magnetic sensor
- heating coils
- same
- dependent properties
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C17/00—Compasses; Devices for ascertaining true or magnetic north for navigation or surveying purposes
- G01C17/38—Testing, calibrating, or compensating of compasses
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0064—Arrangements or instruments for measuring magnetic variables comprising means for performing simulations, e.g. of the magnetic variable to be measured
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/012476 WO2004051298A1 (ja) | 2002-11-29 | 2002-11-29 | 磁気センサ、及び磁気センサの温度依存特性補償方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE495458T1 true ATE495458T1 (de) | 2011-01-15 |
Family
ID=32375632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02783685T ATE495458T1 (de) | 2002-11-29 | 2002-11-29 | Magnetsensor und verfahren zur kompensation temperaturabhängiger eigenschaften desselben |
Country Status (14)
Country | Link |
---|---|
US (5) | US7053607B2 (de) |
EP (2) | EP1566649B1 (de) |
JP (1) | JP4333582B2 (de) |
CN (3) | CN1695066A (de) |
AT (1) | ATE495458T1 (de) |
AU (1) | AU2002349615B2 (de) |
BR (1) | BR0215939A (de) |
CA (1) | CA2507819C (de) |
DE (1) | DE60238951D1 (de) |
HK (1) | HK1080148A1 (de) |
MX (1) | MXPA05005676A (de) |
RU (3) | RU2303791C2 (de) |
TW (1) | TWI251083B (de) |
WO (1) | WO2004051298A1 (de) |
Families Citing this family (64)
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CN100370580C (zh) | 2004-03-29 | 2008-02-20 | 雅马哈株式会社 | 半导体晶片及其制造方法 |
JP5055704B2 (ja) * | 2004-03-29 | 2012-10-24 | ヤマハ株式会社 | 半導体装置の製造方法 |
KR100601956B1 (ko) * | 2004-06-28 | 2006-07-14 | 삼성전자주식회사 | 자기장의 변화를 이용한 온도측정장치 |
JP4023476B2 (ja) * | 2004-07-14 | 2007-12-19 | 日立金属株式会社 | スピンバルブ型巨大磁気抵抗効果素子を持った方位計 |
DE102004043737A1 (de) * | 2004-09-09 | 2006-03-30 | Siemens Ag | Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung |
KR100882051B1 (ko) * | 2004-10-07 | 2009-02-09 | 야마하 가부시키가이샤 | 온도 센서 및 온도 센서의 보정 방법 |
US7437257B2 (en) * | 2004-10-07 | 2008-10-14 | Yamaha Corporation | Geomagnetic sensor and geomagnetic sensor correction method, temperature sensor and temperature sensor correction method, geomagnetism detection device |
JP4945995B2 (ja) * | 2004-10-12 | 2012-06-06 | ヤマハ株式会社 | 地磁気検出装置 |
KR100768919B1 (ko) * | 2004-12-23 | 2007-10-19 | 삼성전자주식회사 | 전원 생성 장치 |
EP1860451B1 (de) * | 2005-03-17 | 2012-06-27 | Yamaha Corporation | Dreiachsen-magnetsensor und herstellungsverfahren dafür |
WO2006098367A1 (ja) | 2005-03-17 | 2006-09-21 | Yamaha Corporation | 磁気センサ及びその製造方法 |
KR100771861B1 (ko) * | 2005-05-26 | 2007-11-01 | 삼성전자주식회사 | 하드디스크 드라이브에 구비된 mr센서의 도메인 특성개선 방법 및 이에 적합한 프로그램을 기록한 기록 매체 |
JP4857628B2 (ja) * | 2005-07-12 | 2012-01-18 | ヤマハ株式会社 | 磁気センサモジュールの検査方法 |
JP4624227B2 (ja) * | 2005-09-29 | 2011-02-02 | 京セラ株式会社 | 通信端末、移動体通信システム及び通信制御方法 |
US7511990B2 (en) * | 2005-09-30 | 2009-03-31 | Everspin Technologies, Inc. | Magnetic tunnel junction temperature sensors |
EP1832888B1 (de) * | 2006-03-09 | 2009-06-17 | Teradyne, Inc. | V/I-Quelle und Testsystem damit |
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JP4904352B2 (ja) * | 2006-07-26 | 2012-03-28 | アルプス電気株式会社 | 磁気センサ |
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US8538318B2 (en) * | 2007-04-23 | 2013-09-17 | Pure Imagination, LLC | Apparatus and methods for an interactive electronic book system |
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JP5397496B2 (ja) * | 2011-05-30 | 2014-01-22 | 株式会社デンソー | 磁気センサ装置およびその製造方法 |
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EP3023803B1 (de) * | 2014-11-19 | 2020-03-18 | Crocus Technology S.A. | MLU-Messzelle zur Abtastung eines externen Magnetfeldes und magnetische Sensorvorrichtung mit der MLU-Zelle |
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JP6619974B2 (ja) * | 2015-08-28 | 2019-12-11 | 日本電産サンキョー株式会社 | エンコーダ |
JP6634277B2 (ja) * | 2015-12-04 | 2020-01-22 | 日本電産サンキョー株式会社 | 位置検出装置 |
RU2610932C1 (ru) * | 2015-12-10 | 2017-02-17 | Акционерное общество "Раменское приборостроительное конструкторское бюро" | Способ определения температурных характеристик трёхкомпонентного магнитометра и устройство для его осуществления |
CN110345971B (zh) * | 2015-12-14 | 2021-12-14 | 英飞凌科技股份有限公司 | 具有热电动势补偿的传感器布置 |
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JP6808565B2 (ja) * | 2017-04-07 | 2021-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置、それを備えた電子回路、及び、半導体装置の形成方法 |
CN110582705A (zh) * | 2017-05-01 | 2019-12-17 | 小利兰·斯坦福大学托管委员会 | 用于在gmr生物传感器阵列上进行准确的温度测量的方法 |
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CN111433620B (zh) * | 2017-12-04 | 2022-06-28 | 株式会社村田制作所 | 磁传感器 |
CN109368587A (zh) * | 2018-10-30 | 2019-02-22 | 杭州士兰集成电路有限公司 | 地磁传感器件及其制造方法 |
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CN109941956B (zh) * | 2019-02-25 | 2021-11-12 | 潍坊歌尔微电子有限公司 | Mems传感器及电子设备 |
CN110345938B (zh) * | 2019-06-25 | 2021-08-31 | 潍坊歌尔微电子有限公司 | 一种晶圆级的磁传感器及电子设备 |
RU193375U1 (ru) * | 2019-07-16 | 2019-10-28 | федеральное государственное бюджетное образовательное учреждение высшего образования "Ивановский государственный энергетический университет имени В.И. Ленина" (ИГЭУ) | Датчик внешнего магнитного поля |
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2002
- 2002-11-29 CN CNA02829971XA patent/CN1695066A/zh active Pending
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2005
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