MX338878B - Deposicion de grafeno en areas grandes por via del desarrollo heteroepitaxial y productos que incluyen el mismo. - Google Patents
Deposicion de grafeno en areas grandes por via del desarrollo heteroepitaxial y productos que incluyen el mismo.Info
- Publication number
- MX338878B MX338878B MX2012001603A MX2012001603A MX338878B MX 338878 B MX338878 B MX 338878B MX 2012001603 A MX2012001603 A MX 2012001603A MX 2012001603 A MX2012001603 A MX 2012001603A MX 338878 B MX338878 B MX 338878B
- Authority
- MX
- Mexico
- Prior art keywords
- graphene
- example embodiments
- certain example
- thin films
- same
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
Abstract
Ciertas modalidades ejemplares de esta invención se refieren al uso de grafeno como un recubrimiento conductor transparente (TCC). En ciertas modalidades ejemplares, las películas delgadas de grafeno se desarrollan de manera heteroepitaxial sobre áreas grandes, por ejemplo, sobre una película delgada de catalizador, a partir de un gas de hidrocarburo (tal como, por ejemplo, C2H2, CH4 o similares). Las películas delgadas de grafeno de ciertas modalidades ejemplares pueden ser impurificadas o no impurificadas. En ciertas modalidades ejemplares, las películas delgadas de grafeno, una vez formadas, pueden despegarse de sus substratos portadores y transferirse a substratos receptores, por ejemplo, para la inclusión en un producto intermedio o final. El grafeno desarrollado, despegado y transferido de esta manera puede exhibir resistencias laminares bajas (por ejemplo, menores que 150 ohms/cuadrado y más bajas cuando es impurificado) y valores de transmisión altos (por ejemplo, por lo menos en los espectros visible e infrarrojo).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/461,346 US10167572B2 (en) | 2009-08-07 | 2009-08-07 | Large area deposition of graphene via hetero-epitaxial growth, and products including the same |
PCT/US2010/001982 WO2011016828A2 (en) | 2009-08-07 | 2010-07-15 | Large area deposition of graphene hetero-epitaxial growth, and products including the same |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2012001603A MX2012001603A (es) | 2012-04-11 |
MX338878B true MX338878B (es) | 2016-05-04 |
Family
ID=42797336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2012001603A MX338878B (es) | 2009-08-07 | 2010-07-15 | Deposicion de grafeno en areas grandes por via del desarrollo heteroepitaxial y productos que incluyen el mismo. |
Country Status (12)
Country | Link |
---|---|
US (1) | US10167572B2 (es) |
EP (2) | EP2462262A2 (es) |
JP (1) | JP5731502B2 (es) |
KR (1) | KR101724772B1 (es) |
CN (2) | CN102549202A (es) |
BR (1) | BR112012008091A2 (es) |
IN (1) | IN2012DN00856A (es) |
MX (1) | MX338878B (es) |
RU (1) | RU2012108641A (es) |
SA (1) | SA110310637B1 (es) |
TW (1) | TW201114683A (es) |
WO (1) | WO2011016828A2 (es) |
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IN2012DN00856A (es) | 2015-07-10 |
WO2011016828A3 (en) | 2011-03-31 |
CN102549202A (zh) | 2012-07-04 |
JP5731502B2 (ja) | 2015-06-10 |
EP2584072A3 (en) | 2013-07-10 |
WO2011016828A2 (en) | 2011-02-10 |
KR20120081977A (ko) | 2012-07-20 |
CN109023514A (zh) | 2018-12-18 |
RU2012108641A (ru) | 2013-09-20 |
JP2013501695A (ja) | 2013-01-17 |
MX2012001603A (es) | 2012-04-11 |
BR112012008091A2 (pt) | 2016-03-01 |
KR101724772B1 (ko) | 2017-04-07 |
EP2584072A2 (en) | 2013-04-24 |
TW201114683A (en) | 2011-05-01 |
US10167572B2 (en) | 2019-01-01 |
EP2462262A2 (en) | 2012-06-13 |
US20110033688A1 (en) | 2011-02-10 |
SA110310637B1 (ar) | 2014-05-25 |
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