KR970071136A - 화학 증폭 포지티브형 레지스트 재료 - Google Patents

화학 증폭 포지티브형 레지스트 재료 Download PDF

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Publication number
KR970071136A
KR970071136A KR1019970012721A KR19970012721A KR970071136A KR 970071136 A KR970071136 A KR 970071136A KR 1019970012721 A KR1019970012721 A KR 1019970012721A KR 19970012721 A KR19970012721 A KR 19970012721A KR 970071136 A KR970071136 A KR 970071136A
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KR
South Korea
Prior art keywords
chemically amplified
amplified positive
torr
positive resist
nitrogen
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KR1019970012721A
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English (en)
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KR100255833B1 (ko
Inventor
준 하따께야마
시게히로 나구라
도시노부 이시하라
Original Assignee
카나가와 치이로
신에쓰 가가꾸 고교 가부시끼가이샤
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Application filed by 카나가와 치이로, 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 카나가와 치이로
Publication of KR970071136A publication Critical patent/KR970071136A/ko
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Publication of KR100255833B1 publication Critical patent/KR100255833B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

원자외선, 전자선 및 X선 등의 고에너지선에 대한 감도가 높고, 특히 고해상도 및 PED에 의한 패턴의 T-톱 형상 또는 기판 면에서의 소매끌기를 해소하는, 알칼리 수용액에서 현상함으로써 해상성, 플라즈마 에칭 내성이 우수하며, 더우기 레지스트 패턴의 내열성도 우수한 미세가공 기술에 적합한 화학 증폭 포지티브형 레지스트 재료가 얻어진다.
(1) pKa 값이 7 이상이고, 100℃에서의 증기압이 2 Torr 미만인 질소 함유 유기 화합물 중에서 선택되는 적어도 1종, 및 (2) pKa 값이 7 이상이고, 100℃에서의 증기압이 2 Torr 내지 100 Torr 범위인 질소 함유 유기화합물 중에서 선택되는 적어도 1종을 배합하여 화학 증폭 포지티브형 레지스트 재료를 제조한다.
(A) 유기 용해, (B) 베이스 수지, (C) 산 발생제, 및 (D) 제1항 기재의 질소 함유 유기 화합물(1) 및 (2)의 혼합물을 배합하여 화학 증폭 포지티브형 레지스트 재료를 수득한다.

Description

화학 증폭 포지티브형 레지스트 재료
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. (1) pKa 값이 7 이상이고, 100℃에서의 증기압이 2 Torr 미만인 질소 함유 유기 화합물 중에서 선택되는 적어도 1종, 및 (2) pKa 값이 7 이상이고, 100℃에서의 증기압이 2 Torr 내지 100 Torr 범위인 질소 함유 유기화합물 중에서 선택되는 적어도 1종을 함유하여 이루어지는 것을 특징으로 하는 화학 증폭 포지티브형 레지스트 재료.
  2. (A) 유기 용해, (B) 베이스 수지, (C) 산 발생제, 및 (D) 제1항 기재의 질소 함유 유기 화합물(1) 및 (2)의 혼합물을 이루어지는 것을 특징으로 하는 화학 증폭 포지티브형 레지스트 재료.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970012721A 1996-04-08 1997-04-07 화학 증폭 포지티브형 레지스트 재료 KR100255833B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP08111309A JP3125678B2 (ja) 1996-04-08 1996-04-08 化学増幅ポジ型レジスト材料
JP96-111309 1996-04-08

Publications (2)

Publication Number Publication Date
KR970071136A true KR970071136A (ko) 1997-11-07
KR100255833B1 KR100255833B1 (ko) 2000-06-01

Family

ID=14557969

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970012721A KR100255833B1 (ko) 1996-04-08 1997-04-07 화학 증폭 포지티브형 레지스트 재료

Country Status (4)

Country Link
US (1) US5985512A (ko)
JP (1) JP3125678B2 (ko)
KR (1) KR100255833B1 (ko)
TW (1) TW565749B (ko)

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KR100571313B1 (ko) * 1998-03-17 2006-04-17 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
CN1153666C (zh) * 1998-11-16 2004-06-16 三菱化学株式会社 阳图制版光敏平版印刷板及其制造方法
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KR100576201B1 (ko) * 2000-01-17 2006-05-03 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭형 레지스트 재료
KR100553263B1 (ko) * 2000-04-14 2006-02-20 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트조성물
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JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
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Also Published As

Publication number Publication date
JP3125678B2 (ja) 2001-01-22
JPH09274312A (ja) 1997-10-21
US5985512A (en) 1999-11-16
TW565749B (en) 2003-12-11
KR100255833B1 (ko) 2000-06-01

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