ATE244904T1 - Polymerzusammensetzung und rezistmaterial - Google Patents

Polymerzusammensetzung und rezistmaterial

Info

Publication number
ATE244904T1
ATE244904T1 AT96309142T AT96309142T ATE244904T1 AT E244904 T1 ATE244904 T1 AT E244904T1 AT 96309142 T AT96309142 T AT 96309142T AT 96309142 T AT96309142 T AT 96309142T AT E244904 T1 ATE244904 T1 AT E244904T1
Authority
AT
Austria
Prior art keywords
image
functional group
polymer composition
polymer
recist
Prior art date
Application number
AT96309142T
Other languages
English (en)
Inventor
Fumiyoshi Urano
Hirotoshi Fujie
Keiji Oono
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Application granted granted Critical
Publication of ATE244904T1 publication Critical patent/ATE244904T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
AT96309142T 1995-12-21 1996-12-13 Polymerzusammensetzung und rezistmaterial ATE244904T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34976895 1995-12-21
JP15623396 1996-05-28
JP16084096 1996-05-31

Publications (1)

Publication Number Publication Date
ATE244904T1 true ATE244904T1 (de) 2003-07-15

Family

ID=27320972

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96309142T ATE244904T1 (de) 1995-12-21 1996-12-13 Polymerzusammensetzung und rezistmaterial

Country Status (8)

Country Link
US (1) US5976759A (de)
EP (1) EP0780732B1 (de)
KR (1) KR100253017B1 (de)
CN (1) CN1097073C (de)
AT (1) ATE244904T1 (de)
DE (1) DE69628996T2 (de)
SG (1) SG75110A1 (de)
TW (2) TW412562B (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0819982A1 (de) * 1996-07-18 1998-01-21 Olin Microelectronic Chemicals, Inc. Strahlungsempfindliche Zusammensetzung
JP2998682B2 (ja) * 1997-03-13 2000-01-11 日本電気株式会社 化学増幅系レジスト
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
KR100489576B1 (ko) * 1997-10-08 2005-12-21 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
TW480370B (en) 1997-10-08 2002-03-21 Shinetsu Chemical Co Polystyrene-based polymer compound, chemical amplification positive type resist material and pattern formation
JP3546687B2 (ja) * 1998-03-26 2004-07-28 住友化学工業株式会社 フォトレジスト組成物
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
JP3743187B2 (ja) * 1998-05-08 2006-02-08 住友化学株式会社 フォトレジスト組成物
US6770413B1 (en) * 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP3771739B2 (ja) 1999-03-18 2006-04-26 東京応化工業株式会社 ポジ型レジスト組成物
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
TW502133B (en) 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6531259B1 (en) 1999-06-21 2003-03-11 Matsushita Electric Industrial Co., Ltd. Pattern formation method and pattern formation material
KR100308423B1 (ko) * 1999-09-07 2001-09-26 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
KR100536540B1 (ko) * 2000-03-07 2005-12-14 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 재료
KR100533362B1 (ko) * 2000-04-19 2005-12-06 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물 및 이를이용한 콘택홀의 형성방법
JP4449176B2 (ja) * 2000-06-30 2010-04-14 住友化学株式会社 化学増幅型レジスト組成物
TW538316B (en) * 2001-01-19 2003-06-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
JP4177966B2 (ja) * 2001-01-25 2008-11-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2004519734A (ja) 2001-04-04 2004-07-02 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド ケイ素含有アセタール保護ポリマーおよびそのフォトレジスト組成物
TWI267697B (en) * 2001-06-28 2006-12-01 Tokyo Ohka Kogyo Co Ltd Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device
JP2003280198A (ja) * 2002-03-20 2003-10-02 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US7067227B2 (en) 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
WO2004059392A1 (ja) * 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
JP4121396B2 (ja) * 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
JP3981830B2 (ja) * 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4494061B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
KR100685582B1 (ko) * 2004-07-30 2007-02-22 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
DE112005002819B4 (de) * 2004-12-03 2016-12-22 Tokyo Ohka Kogyo Co., Ltd. Positivresist - Zusammensetzung und Verfahren zur Erzeugung eines Resist - Musters
JP4582331B2 (ja) 2005-11-08 2010-11-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US7951525B2 (en) * 2008-09-08 2011-05-31 International Business Machines Corporation Low outgassing photoresist compositions
JP5286236B2 (ja) 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP6292059B2 (ja) 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
WO2015150559A1 (en) 2014-04-03 2015-10-08 Cassius Advisors Gmbh A rotor and a fluid turbine with rotor
CN106462068B (zh) * 2014-05-21 2020-07-24 旭化成株式会社 感光性树脂组合物以及电路图案的形成方法
JP6741427B2 (ja) * 2015-01-13 2020-08-19 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 自発光感光性樹脂組成物、これから製造された色変換層を含む表示装置
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
KR20220123377A (ko) * 2019-12-27 2022-09-06 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 패턴 형성 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS6052845A (ja) 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH07117752B2 (ja) 1987-12-14 1995-12-18 株式会社日立製作所 感光性樹脂組成物
JPH01155338A (ja) 1987-12-14 1989-06-19 Hitachi Ltd 感光性樹脂組成物
JPH07117750B2 (ja) 1987-09-24 1995-12-18 株式会社日立製作所 感光性樹脂組成物
JPH01154048A (ja) 1987-12-10 1989-06-16 Toshiba Corp 感光性組成物
JP2615742B2 (ja) 1988-01-22 1997-06-04 松下電器産業株式会社 感光性化合物を用いたレジスト
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
JPH0262544A (ja) 1988-08-30 1990-03-02 Tosoh Corp フォトレジスト組成物
DE68926019T2 (de) 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
JPH02161436A (ja) 1988-12-15 1990-06-21 Oki Electric Ind Co Ltd フォトレジスト組成物及びその使用方法
EP0388343B1 (de) 1989-03-14 1996-07-17 International Business Machines Corporation Chemisch amplifizierter Photolack
JPH0383063A (ja) 1989-08-28 1991-04-09 Kanto Chem Co Inc パターン形成方法
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
EP0440374B1 (de) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JPH03282550A (ja) 1990-03-30 1991-12-12 Oki Electric Ind Co Ltd フォトレジスト組成物
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
DE4202845A1 (de) 1992-01-31 1993-08-05 Basf Ag Strahlungsempfindliches gemisch
JP3342124B2 (ja) 1992-09-14 2002-11-05 和光純薬工業株式会社 微細パターン形成材料及びパターン形成方法
EP0588544A3 (en) * 1992-09-14 1994-09-28 Wako Pure Chem Ind Ltd Fine pattern forming material and pattern formation process
JPH06161112A (ja) * 1992-11-19 1994-06-07 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP3297199B2 (ja) * 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
DE69511141T2 (de) * 1994-03-28 2000-04-20 Wako Pure Chem Ind Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
TW394861B (en) * 1994-04-25 2000-06-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition

Also Published As

Publication number Publication date
EP0780732B1 (de) 2003-07-09
DE69628996T2 (de) 2004-04-22
EP0780732A3 (de) 1997-12-29
TWI285660B (en) 2007-08-21
TW412562B (en) 2000-11-21
DE69628996D1 (de) 2003-08-14
EP0780732A2 (de) 1997-06-25
SG75110A1 (en) 2000-09-19
CN1159459A (zh) 1997-09-17
CN1097073C (zh) 2002-12-25
KR100253017B1 (ko) 2000-06-01
US5976759A (en) 1999-11-02

Similar Documents

Publication Publication Date Title
ATE244904T1 (de) Polymerzusammensetzung und rezistmaterial
DE69612182T2 (de) Polymer und Resistmaterial
KR950019945A (ko) 감방사선성 수지 조성물
NO964215D0 (no) Polymerisering i nærvær av et -substituert nitroksydradikal
WO1999014256A8 (en) Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
MY127927A (en) Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR940018702A (ko) 레지스트 조성물
FI923337A (fi) Organiska fluorenylmetallfoereningar, framstaellning och anvaendning daerav
KR970062810A (ko) 감방사선성 수지 조성물
KR980003841A (ko) 공중합체 및 공중합체 수지 결합 성분을 포함하는 감광성 내식막 조성물
EP0210056A3 (de) Strahlungsempfindliche Polymere
KR940022180A (ko) 양성 감광성 조성물
MY122873A (en) Resist compositions with polymers having pendant groups containing plural acid labile moieties.
KR960038483A (ko) 네가티브형 포토레지스트조성물
KR970027119A (ko) 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료
KR960015097A (ko) 위치검출장치 및 그것을 구비한 노광장치
KR950009363A (ko) 감광성 수지 조성물
ES2076616T3 (es) Derivados de aminoacidos sulfurosos opticamente activos, su preparacion, su polimerizacion en polimeros opticamente activos y su uso.
WO2002068527A3 (en) NOVEL β-OXO COMPOUNDS AND THEIR USE IN PHOTORESIST
DE69927423D1 (de) Gegen Dendritenbildung widerstandsfähiges Kabel
JPS5653114A (en) Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
MY122637A (en) Radiation-sensitive resin composition
KR950014984A (ko) 장치의 제조방법
ES2056171T3 (es) Mezclas tolerantes de polimeros.
JPS51135995A (en) Resinous composition having little or no odor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties