KR950009363A - 감광성 수지 조성물 - Google Patents

감광성 수지 조성물 Download PDF

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KR950009363A
KR950009363A KR1019940022133A KR19940022133A KR950009363A KR 950009363 A KR950009363 A KR 950009363A KR 1019940022133 A KR1019940022133 A KR 1019940022133A KR 19940022133 A KR19940022133 A KR 19940022133A KR 950009363 A KR950009363 A KR 950009363A
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photosensitive resin
resin composition
compound
photoinitiator
diamine
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KR0161542B1 (ko
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하기와라 히데오
가지 마꼬또
누노무라 마사따까
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데쯔오 도미나가
히따찌 케미칼 컴퍼니, 리미티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

Abstract

(A)다음 일반식(Ⅰ)
…(Ⅰ)
(식중, R1은를 표시하고 , R2는 2가의 유기기를 나타냄)로 표시되는 반복단위를 갖는 폴리아미드산 및 (B) 아미노기를 갖는 아크릴 화합물을 함유하는 감광성 수지 조성물 및 이 감광성 수지 조성물에 더해 추가로 광개시제를 함유하는 i-선 스테퍼용 감과성 수지 조성물이 개시된다.

Description

감광성 수지 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (25)

  1. (A)다음 일반식(Ⅰ)
    (식중, R1은를 표시하고 , R2는 2가의 유기기를 나타냄)로 표시되는 반복단위를 갖는 폴리아미드산 및(B)아미노기를 갖는 아크릴 화합물을 함유하는 감광성 수지 조성물
  2. 제1항에 있어서,R2가
    로 이루어진 군 중에서 선택되는 기인 것이 특징인 감광성 수지 조성물.
  3. 제2항에 있어서,R2가인 것이 특징인 감광성 수지 조성물.
  4. 제2항에 있어서,R2가인 것이 특징인 감광성 수지 조성물.
  5. 제2항에 있어서,R2가인 것이 특징인 감광성 수지 조성물.
  6. 제2항에 있어서,R2가인 것이 특징인 감광성 수지 조성물.
  7. 제1항에 있어서, 폴리아미드산이 옥시디프탈산 또는 옥시디프탈산 무수물과 필요한 경우 다른 테트라카르복실산 이무수물로 이루어진 산 성분과 디아민과의 반응 생성물인 것이 특징인 감광성 수지 조성물.
  8. 제 7항에 있어서, 산 성분이 전체 산 성분에 대해 상기 다른 테트라카르복실산 이무수물 80몰%이하를 함유하는 것이 특징인 감광성 수지 조성물.
  9. 제7항에 있어서, 상기 다른 테트라카르복실산 이무수물이 다음 일반식(Ⅱ)로 표시되는 화합물인 것이 특징인 감광성 수지 조성물.
    (식중, R3과 R4는 서로 같거나 다르며 각각 1가의 탄화수소기를 표시하고; S는 1내지 5의 정수이며; S가 2이상이면,R3과 R4들은 각각 서로 같거나 다를 수 있음)
  10. 제7항에 있어서, 디아민이 4,4′-디아미노미페닐 에테르, 2,4′-디아미노디페닐 에테르, 3,4′-디아미노페닐 에테르, 3,3′-디아미노디페닐에테르, 4,4′-디아미노디페닐술폰, 3,3′-디아미노디페닐 술폰 및 메타페닐디아민 중에서 선택된 적어도 한가지인 것이 특징인 감광성 수지 조성물.
  11. 제7항에 있어서, 디아민이 다음 일반식(Ⅲ)으로 표시되는 디아미노폴리실록산을 함유하는 것이 특징인 감광성 수지 조성물.
    (식중,R5와 R6은 각각 2가의 탄화수소기를 표시하고;R7과 R8은 각각 1가의 탄화수소기를 표시하며;R5, R6, R7및 R8은 각각 같거나 다를 수 있고;t는 1내지 5의 정소를 나타냄)
  12. 제 11항에 있어서, R5과 R6이 각각 탄소원자 1내지 3개를 갖는 2가 탄화수소기를 타나내고;R7과 R8은 각각 탄소원자 1내지 3개를 갖는 1가의 탄화수소기인 것이 특징인 감광성 수지 조성물.
  13. 제11항에 있어서, 상기 디아미노폴리실록산이 디아민 성분의 총량에 대해 1내지 10몰%의 양으로 함유된 것이 특징인 감광성 수지 조성물.
  14. 제7항에 있어서, 디아민이 히드록실기-함유 디아민인 것이 특징인 감광성 수지 조성물.
  15. 제1항에 있어서, 아미노기를 갖는 아크릴 화합물(B)가 N,N-디메틸아미노에틸 메타크릴레이트, N,N-디에틸아미노에틸 메타크릴레이트, N,N-디메틸아미노프로필 메타크릴레이트, N,N-디에틸아미노프로필 메타크릴레이트, N,N-디메틸아미노에틸 아크릴레이트, N,N- 디에틸아미노에틸 아크릴레이트, N,N- 디에틸아미노에틸 아크릴레이트, N,N-디메틸아미노프로필 아크릴레이트, N,N- 디에틸아미노프로필 아크릴레이트, N,N-디메틸아미노에틸 아크릴아미드, 및 N,N-디에틸아미노에틸 아크릴아미드 중에서 선택된 적어도 한가지인 것이 특징인 감광성 수지 조성물.
  16. 제1항에 있어서, 일반식(Ⅰ)로 표시되는 반복단위를 갖는 폴리아미드산(A)의 중량에 대해 아미노기를 갖는 아크릴 화합물(B)를 1 내지 200중량%로 함유하는 것이 특징인 감광성 수지 조성물.
  17. 제1항에 있어서, 일반식(Ⅰ)로 표시되는 반복단위를 갖는 폴리아미드산(A)의 중량에 대해 아미노기를 갖는 아크릴 화합물(B)를 5내지 50중량%로 함유하는 것이 특징인 감광성 수지 조성물.
  18. 제1항에 있어서, 광개시제를 추가로 함유하는 것이 특징인 감광성 수지 조성물.
  19. 제1항에 있어서, 광개시제와 아지도 화합물을 추가로 함유하는 것이 특징인 감광성 수지 조성물.
  20. 제1항에 있어서, 광개시제를 추가로 함유하고 i-선 스테퍼용 감광성 수지 조성물로서 사용되는 것이 특징인 감광성 수지 조성물.
  21. 제1항에 있어서, 광개시제와 아지도화합물을 추가로 함유하고 I-선 스테퍼용 감광성 수지 조성물로서 사용되는 것이 특징인 감광성 수지 조성물.
  22. 제 18항에 있어서, 광개시제가 4,4′-비스(디에틸아미노)벤조페논과 1-페닐-2-(0-에톡시카르보닐)옥시이미노프로판-1-온 주중에서 선택된 적어도 한가지인 것이 특징인 감광성 수지 조성물.
  23. 제 19항에 있어서, 광개시제가 4,4′-비스(디에틸아미노)벤조페논과 1-페닐-2-(0-에톡시카르보닐)옥시이미노프로판-1-온 주중에서 선택된 적어도 한가지이고 아지도 화합물은 2,6-비스(4′-아지도벤잘)-4-카르복시시클로헥사논인 것이 특징인 감광성 수지 조성물.
  24. 제 20항에 있어서, 광개시제가 4,4′-비스(디에틸아미노)벤조페논과 1-페닐-2-(0-에톡시카르보닐)옥시이미노프로판-1-온 주중에서 선택된 적어도 한가지인 것이 특징인 감광성 수지 조성물.
  25. 제 21항에 있어서, 광개시제가 4,4′-비스(디에틸아미노)벤조페논과 1-페닐-2-(0-에톡시카르보닐)옥시이미노프로판-1-온 주중에서 선택된 적어도 한가지이고 아지도 화합물은 2,6-비스(4′-아지도벤잘)-4-카르복시시클로헥사논인 것이 특징인 감광성 수지 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940022133A 1993-09-03 1994-09-02 감광성 수지 조성물 KR0161542B1 (ko)

Applications Claiming Priority (4)

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JP21972093 1993-09-03
JP219720/1993 1993-09-03
JP00228294A JP3687988B2 (ja) 1993-09-03 1994-01-14 ｉ線ステッパ用感光性樹脂組成物
JP2282/1994 1994-01-14

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KR950009363A true KR950009363A (ko) 1995-04-21
KR0161542B1 KR0161542B1 (ko) 1999-01-15

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EP (1) EP0642057B1 (ko)
JP (1) JP3687988B2 (ko)
KR (1) KR0161542B1 (ko)
DE (1) DE69414787T2 (ko)
TW (2) TW340913B (ko)

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JP3687988B2 (ja) * 1993-09-03 2005-08-24 日立化成工業株式会社 ｉ線ステッパ用感光性樹脂組成物
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US7153631B2 (en) 2006-12-26
US5856059A (en) 1999-01-05
TW340913B (en) 1998-09-21
US20020004177A1 (en) 2002-01-10
DE69414787D1 (de) 1999-01-07
EP0642057B1 (en) 1998-11-25
US6194126B1 (en) 2001-02-27
US20040106066A1 (en) 2004-06-03
JPH07120921A (ja) 1995-05-12
EP0642057A1 (en) 1995-03-08
TWI221945B (en) 2004-10-11
JP3687988B2 (ja) 2005-08-24
DE69414787T2 (de) 1999-07-22

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