TW340913B - Photosensitive resin composition particularly suitable for I-line exposure - Google Patents
Photosensitive resin composition particularly suitable for I-line exposureInfo
- Publication number
- TW340913B TW340913B TW083108040A TW83108040A TW340913B TW 340913 B TW340913 B TW 340913B TW 083108040 A TW083108040 A TW 083108040A TW 83108040 A TW83108040 A TW 83108040A TW 340913 B TW340913 B TW 340913B
- Authority
- TW
- Taiwan
- Prior art keywords
- diaminodiphenyl
- methacrylate
- diamine
- polyamic acid
- acrylate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/107—Polyamide or polyurethane
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerisation Methods In General (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21972093 | 1993-09-03 | ||
JP00228294A JP3687988B2 (ja) | 1993-09-03 | 1994-01-14 | i線ステッパ用感光性樹脂組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW340913B true TW340913B (en) | 1998-09-21 |
Family
ID=26335636
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087105520A TWI221945B (en) | 1993-09-03 | 1994-09-01 | A process for preparing a relief pattern |
TW083108040A TW340913B (en) | 1993-09-03 | 1994-09-01 | Photosensitive resin composition particularly suitable for I-line exposure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087105520A TWI221945B (en) | 1993-09-03 | 1994-09-01 | A process for preparing a relief pattern |
Country Status (6)
Country | Link |
---|---|
US (4) | US5856059A (zh) |
EP (1) | EP0642057B1 (zh) |
JP (1) | JP3687988B2 (zh) |
KR (1) | KR0161542B1 (zh) |
DE (1) | DE69414787T2 (zh) |
TW (2) | TWI221945B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3687988B2 (ja) * | 1993-09-03 | 2005-08-24 | 日立化成工業株式会社 | i線ステッパ用感光性樹脂組成物 |
ES2146128B1 (es) * | 1995-03-31 | 2001-03-16 | Consejo Superior Investigacion | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. |
US6071667A (en) | 1995-04-13 | 2000-06-06 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition containing a photosensitive polyamide resin |
US6124074A (en) * | 1999-03-11 | 2000-09-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives |
US7169752B2 (en) * | 2003-09-30 | 2007-01-30 | New River Pharmaceuticals Inc. | Compounds and compositions for prevention of overdose of oxycodone |
JP4242597B2 (ja) * | 2002-02-28 | 2009-03-25 | 株式会社日本触媒 | 不飽和アルデヒド合成用触媒とその製造方法、およびその触媒を用いた不飽和アルデヒドの製造方法 |
US7083195B2 (en) * | 2002-10-25 | 2006-08-01 | Invacare Corporation | Suspension with releasable locking system |
US7524617B2 (en) * | 2004-11-23 | 2009-04-28 | E.I. Du Pont De Nemours And Company | Low-temperature curable photosensitive compositions |
US10781341B2 (en) * | 2014-01-31 | 2020-09-22 | Fujifilm Electronic Materials U.S.A., Inc. | Polyimide compositions |
US12018127B2 (en) * | 2018-02-13 | 2024-06-25 | Virginia Tech Intellectual Properties, Inc. | Additive manufacturing of aromatic thermoplastics from photocurable precursor salts |
JP7367699B2 (ja) * | 2018-11-28 | 2023-10-24 | 三菱瓦斯化学株式会社 | ポリイミド樹脂、ポリイミドワニス及びポリイミドフィルム |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5952822B2 (ja) | 1978-04-14 | 1984-12-21 | 東レ株式会社 | 耐熱性感光材料 |
GB2092164B (en) | 1980-12-17 | 1984-12-05 | Hitachi Ltd | Loght or radiation-sensitive polymer composition |
JPS57168942A (en) | 1981-04-13 | 1982-10-18 | Hitachi Ltd | Photosensitive polymer composition |
US4548891A (en) * | 1983-02-11 | 1985-10-22 | Ciba Geigy Corporation | Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators |
EP0119719B1 (en) | 1983-03-03 | 1987-05-06 | Toray Industries, Inc. | Radiation sensitive polymer composition |
JPS59160139A (ja) * | 1983-03-04 | 1984-09-10 | Hitachi Ltd | 感光性重合体組成物 |
JPS6042425A (ja) * | 1983-08-17 | 1985-03-06 | Toray Ind Inc | 化学線感応性重合体組成物 |
US5106720A (en) * | 1987-07-21 | 1992-04-21 | Hoechst Celanese Corporation | Base developable negative acting photoresists |
JPH01172454A (ja) * | 1987-12-28 | 1989-07-07 | Sumitomo Bakelite Co Ltd | 放射線感応組成物 |
JPH0336861A (ja) | 1989-07-03 | 1991-02-18 | Nec Corp | 着信規制方式 |
JP2949813B2 (ja) * | 1989-09-19 | 1999-09-20 | 東レ株式会社 | 化学線感応性重合体組成物 |
EP0430221B1 (en) | 1989-11-30 | 1997-04-16 | Sumitomo Bakelite Company Limited | Photosensitive resin composition |
US5122436A (en) * | 1990-04-26 | 1992-06-16 | Eastman Kodak Company | Curable composition |
US5399460A (en) * | 1991-12-04 | 1995-03-21 | E. I. Du Pont De Nemours And Company | Negative photoresists containing aminoacrylate salts |
JP3084585B2 (ja) * | 1991-12-09 | 2000-09-04 | チッソ株式会社 | ポリイミド系感光性カバーコート剤 |
US5472823A (en) * | 1992-01-20 | 1995-12-05 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition |
DE4217688A1 (de) * | 1992-05-29 | 1993-12-02 | Basf Lacke & Farben | Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen |
DE69308671T2 (de) | 1992-07-22 | 1997-10-16 | Asahi Chemical Ind | Photoempfindliche Polyimid-Zusammensetzung |
EP0624826B1 (de) | 1993-05-14 | 1997-07-16 | OCG Microelectronic Materials Inc. | Verfahren zur Herstellung von Reliefstrukturen durch i-Linien-Bestrahlung |
US5811218A (en) * | 1993-07-28 | 1998-09-22 | Hitachi Chemical Company, Ltd. | Photoinitiator compositions including amino acids, coumarin and titanocene and photosensitive materials using the same |
JP3687988B2 (ja) * | 1993-09-03 | 2005-08-24 | 日立化成工業株式会社 | i線ステッパ用感光性樹脂組成物 |
US5399655A (en) * | 1993-10-29 | 1995-03-21 | E. I. Du Pont De Nemours And Company | Positive-working photodefinable polyimide precursors |
-
1994
- 1994-01-14 JP JP00228294A patent/JP3687988B2/ja not_active Expired - Lifetime
- 1994-08-31 DE DE69414787T patent/DE69414787T2/de not_active Expired - Lifetime
- 1994-08-31 EP EP94306413A patent/EP0642057B1/en not_active Expired - Lifetime
- 1994-09-01 TW TW087105520A patent/TWI221945B/zh not_active IP Right Cessation
- 1994-09-01 TW TW083108040A patent/TW340913B/zh not_active IP Right Cessation
- 1994-09-02 KR KR1019940022133A patent/KR0161542B1/ko not_active IP Right Cessation
-
1996
- 1996-06-17 US US08/664,515 patent/US5856059A/en not_active Expired - Lifetime
-
1998
- 1998-08-20 US US09/136,610 patent/US6194126B1/en not_active Expired - Lifetime
-
2000
- 2000-01-14 US US09/482,859 patent/US20020004177A1/en not_active Abandoned
-
2003
- 2003-11-17 US US10/713,036 patent/US7153631B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6194126B1 (en) | 2001-02-27 |
EP0642057B1 (en) | 1998-11-25 |
EP0642057A1 (en) | 1995-03-08 |
US20040106066A1 (en) | 2004-06-03 |
JP3687988B2 (ja) | 2005-08-24 |
KR950009363A (ko) | 1995-04-21 |
US20020004177A1 (en) | 2002-01-10 |
JPH07120921A (ja) | 1995-05-12 |
TWI221945B (en) | 2004-10-11 |
DE69414787T2 (de) | 1999-07-22 |
KR0161542B1 (ko) | 1999-01-15 |
DE69414787D1 (de) | 1999-01-07 |
US5856059A (en) | 1999-01-05 |
US7153631B2 (en) | 2006-12-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |