KR900010465A - 양성 레지스트 조성물의 제조방법 - Google Patents

양성 레지스트 조성물의 제조방법 Download PDF

Info

Publication number
KR900010465A
KR900010465A KR1019890018045A KR890018045A KR900010465A KR 900010465 A KR900010465 A KR 900010465A KR 1019890018045 A KR1019890018045 A KR 1019890018045A KR 890018045 A KR890018045 A KR 890018045A KR 900010465 A KR900010465 A KR 900010465A
Authority
KR
South Korea
Prior art keywords
producing
resist composition
positive resist
alkali
soluble resin
Prior art date
Application number
KR1019890018045A
Other languages
English (en)
Other versions
KR0137764B1 (ko
Inventor
다께시 히오끼
고지 구와나
준 도미오까
히로또시 나까니시
야스노리 우에따니
유끼오 하나모또
후미오 오이
Original Assignee
모리 히데오
스미또모 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17982489&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR900010465(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 모리 히데오, 스미또모 가가꾸 고오교 가부시끼가이샤 filed Critical 모리 히데오
Publication of KR900010465A publication Critical patent/KR900010465A/ko
Application granted granted Critical
Publication of KR0137764B1 publication Critical patent/KR0137764B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)

Abstract

내용 없음

Description

양성 레지스트 조성물의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 퀴는 디아지드 술포닐 할로겐화물을 페놀 화합물과 축합반응시키고, 축합반응 혼합물을 레지스트 용매 내의 알칼리-가용성 수지 용액과 혼합하고, 그 혼합물로 부터 불순물을 제거하는 단계로 이루어진, 양성 레지스트 조성물의 제조방법.
  2. 제1항에 있어서, 알칼리-가용성 수지가 노볼락 수지인, 양성 레지스트 조성물의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890018045A 1988-12-06 1989-12-06 양성 레지스트 조성물의 제조방법 KR0137764B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP308559/1988 1988-12-06
JP88-308559 1988-12-06
JP63308559A JP2697039B2 (ja) 1988-12-06 1988-12-06 ポジ型レジスト組成物の製造方法

Publications (2)

Publication Number Publication Date
KR900010465A true KR900010465A (ko) 1990-07-07
KR0137764B1 KR0137764B1 (ko) 1998-04-27

Family

ID=17982489

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018045A KR0137764B1 (ko) 1988-12-06 1989-12-06 양성 레지스트 조성물의 제조방법

Country Status (7)

Country Link
US (1) US5080997A (ko)
EP (1) EP0372504B1 (ko)
JP (1) JP2697039B2 (ko)
KR (1) KR0137764B1 (ko)
CA (1) CA2004593A1 (ko)
DE (1) DE68926151T2 (ko)
MX (1) MX171835B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300396A (en) * 1990-11-28 1994-04-05 Hoechst Celanese Corporation Process of making naphthoquinone diazide esters using lactone solvents
JP2976597B2 (ja) * 1991-04-17 1999-11-10 住友化学工業株式会社 キノンジアジドスルホン酸エステルの製造方法
US5618655A (en) * 1995-07-17 1997-04-08 Olin Corporation Process of reducing trace levels of metal impurities from resist components
US5623042A (en) * 1995-07-19 1997-04-22 Olin Corporation Process for reducing trace levels of metallic impurities in cyclized polyisoprene resin
KR100979871B1 (ko) 2002-04-01 2010-09-02 다이셀 가가꾸 고교 가부시끼가이샤 ＡｒＦ 엑시머 레이저 레지스트용 중합체 용액의 제조 방법
US20060172231A1 (en) * 2002-08-08 2006-08-03 Fujifilm Electronic Materials U.S.A., Inc Use of an oxidizer to improve trace metals removal from photoresist and photoresist components
AU2004249284A1 (en) * 2003-06-18 2004-12-29 The Board Of Trustees Of The Leland Stanford Junior University Electro-adhesive tissue manipulator
JP4699482B2 (ja) * 2005-02-02 2011-06-08 コーロン インダストリーズ インク ポジティブ型ドライフィルムフォトレジストの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795809A (fr) * 1972-02-22 1973-08-22 Eastman Kodak Co Nouveaux polymeres photosensibles a groupes o-quinone diazide
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS58205147A (ja) * 1982-05-25 1983-11-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
JPS61118744A (ja) * 1984-11-15 1986-06-06 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
JPS63178228A (ja) * 1987-01-20 1988-07-22 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JP2560266B2 (ja) * 1987-03-25 1996-12-04 日本合成ゴム株式会社 感放射線性樹脂組成物
JPS63305348A (ja) * 1987-06-05 1988-12-13 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
EP0372504A1 (en) 1990-06-13
KR0137764B1 (ko) 1998-04-27
DE68926151T2 (de) 1996-08-22
CA2004593A1 (en) 1990-06-06
EP0372504B1 (en) 1996-04-03
JPH02154259A (ja) 1990-06-13
JP2697039B2 (ja) 1998-01-14
US5080997A (en) 1992-01-14
MX171835B (es) 1993-11-18
DE68926151D1 (de) 1996-05-09

Similar Documents

Publication Publication Date Title
KR840004589A (ko) 포지티브형(positive type) 감광성 내식막 조성물
KR880009291A (ko) 포지티브-작용성 감광성 내식막 조성물
EP0136110A3 (en) Positive photosensitive compositions useful as photoresists
KR850004662A (ko) 포지티브 광저항 조성물
KR900010465A (ko) 양성 레지스트 조성물의 제조방법
KR960034162A (ko) 테트라페놀 화합물 및 이의 제조방법
MX172758B (es) Composicion de capa protectora positiva
KR900018186A (ko) 광저항물에 있어서 다 분기(多 分岐)된 노볼랙(highly branched novolak)의 사용법
MY105698A (en) Method for preparing lithographically sensitive branched novolaks.
KR920020275A (ko) 방사선 감수성 화합물의 제조방법 및 양성 레지스트 조성물
KR870007917A (ko) 4-아세틸 이소퀴놀리논 화합물의 제조방법
KR880001038A (ko) 반도체 리드 부분의 필름을 제거하기 위한 조성물
EP0295626A3 (en) Photosensitive composition
KR950012153A (ko) 포지티브형 단편 조성물 및 패턴형성방법
KR830003564A (ko) 휘발유 대용 연료의 제조방법
KR850008644A (ko) 증발주조법(Evaporative Cadting Process)에 사용하는 EPS Bead 제조방법
KR910011944A (ko) 노볼락형 페놀계 수지의 제조방법
KR910012225A (ko) 소주중에 첨가된 아스파탐의 분해방지방법
KR910008490A (ko) 방사선 민감성 포지티브 레지스트 조성물
KR860001700A (ko) Eva 폐기물을 이용한 재생원료의 제조방법
KR850007447A (ko) 신규한 폴리아크릴아미드 및 그 부분가수분해물의 제조방법
KR840001960A (ko) 사카린의 제조법
KR930001917A (ko) 악성 종양 치료제의 제조방법
KR910009897A (ko) 페타이어, 폐고무류로 두탄을 제조하는 방법
KR920005350A (ko) 레지스트 패턴의 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee