KR910013490A - 전자 빔 리소그래피 공정 - Google Patents

전자 빔 리소그래피 공정 Download PDF

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Publication number
KR910013490A
KR910013490A KR1019890020708A KR890020708A KR910013490A KR 910013490 A KR910013490 A KR 910013490A KR 1019890020708 A KR1019890020708 A KR 1019890020708A KR 890020708 A KR890020708 A KR 890020708A KR 910013490 A KR910013490 A KR 910013490A
Authority
KR
South Korea
Prior art keywords
electron beam
lithography process
beam lithography
photoresist
multilayer resist
Prior art date
Application number
KR1019890020708A
Other languages
English (en)
Other versions
KR920007188B1 (ko
Inventor
강호영
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890020708A priority Critical patent/KR920007188B1/ko
Publication of KR910013490A publication Critical patent/KR910013490A/ko
Application granted granted Critical
Publication of KR920007188B1 publication Critical patent/KR920007188B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음.

Description

전자 빔 리소그래피 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 전자 빔 리소그래피를 위한 다층 레지스트막의 구성을 도시한 단면도.

Claims (1)

  1. 다층 레지스트막을 사용하는 전자 빔 리소그래피 공정에 있어서, 상기 다층 레지스트막은 평탄화층인 제1포토레지스트와, 보호층인 절연막, 전자 빔 조사시 손실되는 전자를 채우기 위한 금속박막, 그리고 식각공정을 위한 포토레지스트 패턴이 형성되는 제2포토레지스트가 차례로 적층되어 형성됨을 특징으로 하는 전자 빔 리소그래피 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890020708A 1989-12-30 1989-12-30 전자 빔 리소그래피 공정 KR920007188B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020708A KR920007188B1 (ko) 1989-12-30 1989-12-30 전자 빔 리소그래피 공정

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020708A KR920007188B1 (ko) 1989-12-30 1989-12-30 전자 빔 리소그래피 공정

Publications (2)

Publication Number Publication Date
KR910013490A true KR910013490A (ko) 1991-08-08
KR920007188B1 KR920007188B1 (ko) 1992-08-27

Family

ID=19294761

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020708A KR920007188B1 (ko) 1989-12-30 1989-12-30 전자 빔 리소그래피 공정

Country Status (1)

Country Link
KR (1) KR920007188B1 (ko)

Also Published As

Publication number Publication date
KR920007188B1 (ko) 1992-08-27

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