ATE135495T1 - Apparat und verfahren zur herstellung einer speicherzelle mit schwebendem gate und doppelter dielektrikumschicht - Google Patents

Apparat und verfahren zur herstellung einer speicherzelle mit schwebendem gate und doppelter dielektrikumschicht

Info

Publication number
ATE135495T1
ATE135495T1 AT90907873T AT90907873T ATE135495T1 AT E135495 T1 ATE135495 T1 AT E135495T1 AT 90907873 T AT90907873 T AT 90907873T AT 90907873 T AT90907873 T AT 90907873T AT E135495 T1 ATE135495 T1 AT E135495T1
Authority
AT
Austria
Prior art keywords
layer
forming
conducting
insulating layer
dielectric layer
Prior art date
Application number
AT90907873T
Other languages
English (en)
Inventor
Daniel Charles Guterman
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xicor Inc filed Critical Xicor Inc
Application granted granted Critical
Publication of ATE135495T1 publication Critical patent/ATE135495T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT90907873T 1989-06-21 1990-05-08 Apparat und verfahren zur herstellung einer speicherzelle mit schwebendem gate und doppelter dielektrikumschicht ATE135495T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36913489A 1989-06-21 1989-06-21

Publications (1)

Publication Number Publication Date
ATE135495T1 true ATE135495T1 (de) 1996-03-15

Family

ID=23454223

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90907873T ATE135495T1 (de) 1989-06-21 1990-05-08 Apparat und verfahren zur herstellung einer speicherzelle mit schwebendem gate und doppelter dielektrikumschicht

Country Status (4)

Country Link
EP (1) EP0478577B1 (de)
AT (1) ATE135495T1 (de)
DE (1) DE69025939T2 (de)
WO (1) WO1990016085A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331189A (en) * 1992-06-19 1994-07-19 International Business Machines Corporation Asymmetric multilayered dielectric material and a flash EEPROM using the same
DE19941684B4 (de) * 1999-09-01 2004-08-26 Infineon Technologies Ag Halbleiterbauelement als Verzögerungselement
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
JPS6046554B2 (ja) * 1978-12-14 1985-10-16 株式会社東芝 半導体記憶素子及び記憶回路
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5933873A (ja) * 1982-08-20 1984-02-23 Hitachi Ltd 半導体素子の製造方法
JPS6288368A (ja) * 1985-10-15 1987-04-22 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
US4706102A (en) * 1985-11-07 1987-11-10 Sprague Electric Company Memory device with interconnected polysilicon layers and method for making
JPS6367783A (ja) * 1986-09-09 1988-03-26 Mitsubishi Electric Corp 半導体記憶装置
JPH0196950A (ja) * 1987-10-08 1989-04-14 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
WO1990016085A1 (en) 1990-12-27
EP0478577A1 (de) 1992-04-08
EP0478577B1 (de) 1996-03-13
EP0478577A4 (en) 1992-07-08
DE69025939D1 (de) 1996-04-18
DE69025939T2 (de) 1996-08-01

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties