KR950034531A - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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KR950034531A
KR950034531A KR1019950009915A KR19950009915A KR950034531A KR 950034531 A KR950034531 A KR 950034531A KR 1019950009915 A KR1019950009915 A KR 1019950009915A KR 19950009915 A KR19950009915 A KR 19950009915A KR 950034531 A KR950034531 A KR 950034531A
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gas
processing
processing apparatus
plasma processing
gas ejection
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KR1019950009915A
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KR100300097B1 (ko
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아키라 스즈키
고헤이 가와무라
슈이치 이시즈카
지로 하타
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이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

플라즈마 처리장치는 처리용기내에서 피처리기면을 가지는 피처리물을 지지하기 위한 서셉터와, 처리용기내로 피처리물 처리가스를 공급하기 위한 다수개의 처리가스 공급노즐과, 처리가스의 플라즈마를 발생하기 위하여 처리용기내에 전자파를 발생시키는 고주파 코일을 포함하여 구성된다. 공급노즐은 처리용기내의 피처리체의 표면에 실질적으로 수직인 방향으로 다수개의 높이로 형성된 처리가스 분출구멍을 가지며, 높은곳에 위치하는 가스 분출구멍들을 낮은 곳의 가스 분출구멍의 표면보다 더 중심에 가까이 위치한다.

Description

플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 관한 플라즈마 처리장치를 나타낸 개략사시도.

Claims (14)

  1. 둘레벽을 가지며, 내부가 배기되는 처리용기와,이 처리용기내에 피처리면을 가지는 피처리체를 지지하는 수단과, 이 처리용기 내에 피처리체를 위한 처리가스를 공급하는 수단과, 처리용기내에 전자파를 발생시키고 상기 처리가스의 플라즈마를 발생시키는 수단을 구비하며,상기 처리가스 공급수단은, 처리용기 내에서, 피처리체의 피처리면의 피처리면과 수직인 방향으로 여러단에 걸쳐서 배치된 여러개의 처리가스 분출구멍을 구비하며, 상단측에 위치하는 상기 가스분출구멍을 하단측에 위치하는 상기 처리가스 분출구멍보다도 피처리면의 중심축에 위치시키고 있는 플라즈마 처리장치.
  2. 제1항에 있어서, 상기 처리가스 공급수단은, 상기 처리용기 내에 여러단에 걸쳐서 배치되고, 상기 처리가스 분출구멍을 각각 가지는 여러개의 공급노즐을 가지며, 각 단의 공급노즐은 피처리면과 직교하여 피처리면의 중심을 통하는 중심축을 중심으로 방사형상으로 배열되어 있는 것을 특징으로 하는 플라즈마 처리장치.
  3. 제2항에 있어서, 상기 공급노즐을 처리용기의 둘레벽으로부터 피처리체의 피처리면에 평행하게 뻗어 있고, 뻗어나온 끝단에 사기 처리가스 분사구멍을 가지면, 상단의 것이 하단의 것보다도 긴 것을 특징으로 하는 플라즈마 처리장치.
  4. 제3항에 있어서, 상기 각각의 단은 같은 수의 공급노즐을 가지는 것을 특징으로 하는 플라즈마 처리장치.
  5. 제4항에 있어서, 상기 공급노즐의 가스분출구멍으로부터 동시에 같은 유량으로 처리가스를 분사시키는 수단을 가지는 것을 특징으로 하는 플라즈마 처리장치.
  6. 제1항에 있어서, 상기 하단에 위치하는 처리가스 분출구멍은, 상기 처리용기의 둘레벽과, 상기 피처리체의 모서리의 사이에 위치하는 것을 특징으로 하는 플라즈마 처리장치.
  7. 제1항에 있어서, 상기 상단의 처리가스 분출구멍보다도 피처리체로부터 피처리체의 피처리면과 실질적으로 수직인 방향으로 떨어져 배치되어 처리용기 내에 첨가가스를 공급하기 위한 첨가가스 분출구멍을 첨가가스 분출구멍을 가지는 첨가가스공급 도입수단을 더욱 구비하는 것을 특징으로 하는 플라즈마 처리장치.
  8. 제7항에 있어서, 상기 처리가스 공급수단은, 막형성가스를 공급하는 수단이며, 상기 첨가가스 공급수단은 불활성가스 또는 산소 또는 이들의 혼합가스를 공급하는 수단인 것을 특징으로 하는 플라즈마 처리장치.
  9. 제1항에 있어서, 상기 처리가스 공급수단은, 상기 처리용기 내에 설치되고, 피처리체와 간격을 가지고 대면한 가스분출면을 가지는 가스공급헤드를 가지며, 이 가스분출면에는 상기 처리가스 분출구멍이 여러단에 걸쳐서 형성되어 있는 것을 특징으로 하는 플라즈마 처리장치.
  10. 제9항에 있어서, 상기 가스공급헤드는 석영으로 형성되어 있고, 가스분사면은 중심으로부터 둘레로 향함에 따라서 피처리체의 피처리면에 접근하도록 변형하여 있는 것을 특징으로 하는 플라즈마 처리장치.
  11. 제10항에 있어서, 상기 가스분사면은 만곡면인 것을 특징으로 하는 플라즈마 처리장치.
  12. 제10항에 있어서, 상기 가스분사면은 경사진 평면인 것을 특징으로 하는 플라즈마 처리장치.
  13. 둘레벽과 천정부를 가지며 내주가 10-2~10-6Torr로 배기되는 처리용기와, 처리용기 내에 설치되며, 피러치면을 위로 향하여 피처리체를 지지하는 서셉터와, 상기 서셉터에 지지된 피처리체의 피처리면과 간격을 두고 대향하여 설치된 전자파 발생용의 안테나부재와 이 안테나부재에 접속된 고주파전원과, 상기 처리용기에 처리가스를 공급하기 위한 공급수단과, 이 공급수단에 설치되고 상기 서셉터의 윗쪽에 상하방향으로 여러단에 걸쳐서 배치된 처리가스 분출구멍을 구비하며, 상단측에 위치하는 상기 가스분출구멍을 하단측에 위치하는 상기 처리가스 분출구멍보다 처리용기 중심측에 위치시키고 있는 플라즈마 처리장치.
  14. 제13항에 있어서, 상기 안테나부재는 처리용기 내에 설치되며, 이 안테나부재을 커버하고, 이것을 처리 가스로부터 보호하는 보호수단을 가지는 것을 것을 특징으로 하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950009915A 1994-04-26 1995-04-26 플라즈마처리장치 KR100300097B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11030194 1994-04-26
JP94-110301 1994-04-26
JP94-167451 1994-06-27
JP16745194A JP3243125B2 (ja) 1994-06-27 1994-06-27 処理装置

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KR950034531A true KR950034531A (ko) 1995-12-28
KR100300097B1 KR100300097B1 (ko) 2001-11-30

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TW (1) TW311326B (ko)

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KR100466867B1 (ko) * 1997-07-03 2005-04-19 삼성전자주식회사 증착속도가일정한플라즈마인헨스드화학기상증착장치
KR100535827B1 (ko) * 1997-03-31 2005-12-12 램 리서치 코포레이션 플라즈마 공정 챔버 내부 표면 상의 부착물 생성을 제어하는 방법 및 그 장치

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