JP2018517276A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2018517276A JP2018517276A JP2017549781A JP2017549781A JP2018517276A JP 2018517276 A JP2018517276 A JP 2018517276A JP 2017549781 A JP2017549781 A JP 2017549781A JP 2017549781 A JP2017549781 A JP 2017549781A JP 2018517276 A JP2018517276 A JP 2018517276A
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- 239000000758 substrate Substances 0.000 title claims abstract description 194
- 238000009792 diffusion process Methods 0.000 claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 74
- 238000009826 distribution Methods 0.000 claims abstract description 72
- 230000002093 peripheral effect Effects 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 83
- 238000005530 etching Methods 0.000 description 19
- 230000007935 neutral effect Effects 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 5
- 238000009827 uniform distribution Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005596 ionic collisions Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】本発明に係る基板処理装置は、基板処理空間を提供するチャンバと、該チャンバに工程ガスを供給する工程ガス供給ラインと、周縁部に工程ガスが噴射される噴射孔が形成された第1の拡散板と、該第1の拡散板と向かい合って位置し、基板を支持する基板支持台と、第1の拡散板と基板支持台との間に配設され、複数の分配孔が形成された第2の拡散板と、第1の拡散板と第2の拡散板との間の空間にプラズマを形成するプラズマ発生部とを備える。
【選択図】図1
Description
Claims (10)
- 基板処理空間を提供するチャンバと、
前記チャンバに工程ガスを供給する工程ガス供給ラインと、
周縁部に前記工程ガスが噴射される噴射孔が形成された第1の拡散板と、
前記第1の拡散板と向かい合って位置し、基板を支持する基板支持台と、
前記第1の拡散板と前記基板支持台との間に配設され、複数の分配孔が形成された第2の拡散板と、
前記第1の拡散板と前記第2の拡散板との間の空間にプラズマを形成するプラズマ発生部と、
を備える基板処理装置。 - 前記第2の拡散板の周縁と接続され、複数のガス誘導孔が形成された側壁部材をさらに備える請求項1に記載の基板処理装置。
- 前記第2の拡散板は、位置ごとに異なる前記分配孔の有効面積密度を有する請求項1に記載の基板処理装置。
- 前記第2の拡散板は、中央部が周縁部と比べて、前記分配孔の有効面積密度が大きい請求項3に記載の基板処理装置。
- 前記分配孔に嵌め込んで前記第2の拡散板の開放面積を調節する嵌込体をさらに備える請求項1に記載の基板処理装置。
- 前記嵌込体は、中心部が貫通された貫通孔を備える請求項5に記載の基板処理装置。
- 前記第2の拡散板は、複数の多段構造に形成され、
各段の前記分配孔は、 互いに隣り合う段の間で位置が異なる請求項1に記載の基板処理装置。 - 前記第1の拡散板と前記第2の拡散板との間の間隔を調節する位置調整部をさらに備える請求項1に記載の基板処理装置。
- 前記チャンバの内壁と隣り合って前記基板支持台の周りに沿って対称となるように位置し、多段からなる複数の排気ポートをさらに備える請求項1に記載の基板処理装置。
- 前記基板支持台の周りに沿って前記基板支持台の周縁部から延びる遮断リングをさらに備える請求項1に記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150055297A KR101682155B1 (ko) | 2015-04-20 | 2015-04-20 | 기판 처리 장치 |
KR10-2015-0055297 | 2015-04-20 | ||
PCT/KR2016/004074 WO2016171451A1 (ko) | 2015-04-20 | 2016-04-19 | 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018517276A true JP2018517276A (ja) | 2018-06-28 |
JP6499771B2 JP6499771B2 (ja) | 2019-04-10 |
Family
ID=57143453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017549781A Active JP6499771B2 (ja) | 2015-04-20 | 2016-04-19 | 基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180122638A1 (ja) |
JP (1) | JP6499771B2 (ja) |
KR (1) | KR101682155B1 (ja) |
CN (1) | CN107466421B (ja) |
TW (1) | TWI634587B (ja) |
WO (1) | WO2016171451A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020080395A (ja) * | 2018-11-14 | 2020-05-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US10790119B2 (en) * | 2017-06-09 | 2020-09-29 | Mattson Technology, Inc | Plasma processing apparatus with post plasma gas injection |
US11201036B2 (en) | 2017-06-09 | 2021-12-14 | Beijing E-Town Semiconductor Technology Co., Ltd | Plasma strip tool with uniformity control |
KR102009348B1 (ko) * | 2017-09-20 | 2019-08-09 | 주식회사 유진테크 | 배치식 플라즈마 기판처리장치 |
KR20200072557A (ko) * | 2017-12-27 | 2020-06-22 | 매슨 테크놀로지 인크 | 플라즈마 처리 장치 및 방법 |
WO2020154244A1 (en) * | 2019-01-23 | 2020-07-30 | Lam Research Corporation | Substrate processing system including dual ion filter for downstream plasma |
CN112352302A (zh) * | 2019-01-25 | 2021-02-09 | 玛特森技术公司 | 隔栅中的等离子体后气体注入 |
GB201904587D0 (en) * | 2019-04-02 | 2019-05-15 | Oxford Instruments Nanotechnology Tools Ltd | Surface processing apparatus |
KR102187121B1 (ko) * | 2019-04-30 | 2020-12-07 | 피에스케이 주식회사 | 기판 처리 장치 |
CN110170286B (zh) * | 2019-07-06 | 2021-10-01 | 河南佰利联新材料有限公司 | 一种可在线调节的干气密封氧化加料反应器 |
CN111471980B (zh) * | 2020-04-15 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 适于远程等离子体清洗的反应腔室、沉积设备及清洗方法 |
KR20230122133A (ko) * | 2021-05-11 | 2023-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택시 및 cvd 챔버용 가스 인젝터 |
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JP2007059944A (ja) * | 1997-02-24 | 2007-03-08 | Foi:Kk | プラズマ処理装置 |
JP2008282888A (ja) * | 2007-05-09 | 2008-11-20 | Canon Anelva Corp | 真空処理装置および真空処理方法 |
US20090025877A1 (en) * | 2003-11-14 | 2009-01-29 | Gwang Ho Hur | Flat panel display manufacturing apparatus |
JP2009038050A (ja) * | 2007-07-31 | 2009-02-19 | Mitsubishi Materials Corp | プラズマエッチング用単結晶シリコン電極板 |
KR20090024518A (ko) * | 2007-09-04 | 2009-03-09 | 주식회사 유진테크 | 기판처리장치 |
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-
2015
- 2015-04-20 KR KR1020150055297A patent/KR101682155B1/ko active IP Right Grant
-
2016
- 2016-03-31 TW TW105110177A patent/TWI634587B/zh active
- 2016-04-19 JP JP2017549781A patent/JP6499771B2/ja active Active
- 2016-04-19 WO PCT/KR2016/004074 patent/WO2016171451A1/ko active Application Filing
- 2016-04-19 CN CN201680021656.9A patent/CN107466421B/zh active Active
- 2016-04-19 US US15/566,696 patent/US20180122638A1/en not_active Abandoned
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JP2007059944A (ja) * | 1997-02-24 | 2007-03-08 | Foi:Kk | プラズマ処理装置 |
US20090025877A1 (en) * | 2003-11-14 | 2009-01-29 | Gwang Ho Hur | Flat panel display manufacturing apparatus |
JP2010512031A (ja) * | 2006-12-05 | 2010-04-15 | アプライド マテリアルズ インコーポレイテッド | チャンバ中央のガス分配プレート、同調型プラズマ流制御グリッド及び電極 |
JP2008282888A (ja) * | 2007-05-09 | 2008-11-20 | Canon Anelva Corp | 真空処理装置および真空処理方法 |
JP2009038050A (ja) * | 2007-07-31 | 2009-02-19 | Mitsubishi Materials Corp | プラズマエッチング用単結晶シリコン電極板 |
KR20090024518A (ko) * | 2007-09-04 | 2009-03-09 | 주식회사 유진테크 | 기판처리장치 |
JP2010538489A (ja) * | 2007-09-04 | 2010-12-09 | ユージン テクノロジー カンパニー リミテッド | 排気ユニットおよびこれを用いる排気方法、並びに前記排気ユニットを含む基板処理装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020080395A (ja) * | 2018-11-14 | 2020-05-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7166147B2 (ja) | 2018-11-14 | 2022-11-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107466421A (zh) | 2017-12-12 |
CN107466421B (zh) | 2019-05-28 |
JP6499771B2 (ja) | 2019-04-10 |
KR20160124534A (ko) | 2016-10-28 |
US20180122638A1 (en) | 2018-05-03 |
TW201705197A (zh) | 2017-02-01 |
TWI634587B (zh) | 2018-09-01 |
KR101682155B1 (ko) | 2016-12-02 |
WO2016171451A1 (ko) | 2016-10-27 |
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