KR940001443A - T형 단면구조의게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법 - Google Patents

T형 단면구조의게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법 Download PDF

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KR940001443A
KR940001443A KR1019920009915A KR920009915A KR940001443A KR 940001443 A KR940001443 A KR 940001443A KR 1019920009915 A KR1019920009915 A KR 1019920009915A KR 920009915 A KR920009915 A KR 920009915A KR 940001443 A KR940001443 A KR 940001443A
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gate metal
insulating film
gate
manufacturing
field effect
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KR1019920009915A
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KR0130963B1 (ko
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신진호
권영세
김창태
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이헌조
주식회사 금성사
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Priority to US08/073,428 priority patent/US5563079A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T

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Abstract

본 발명은 전계효과 트랜지스터의 게이트전극 형성시 전극길이의 최소화 및 공정의 단순화를 실현할 수 있는 FET 제조방법으로서, 기판상에 제1절연막과 PR을 순차 형성한후 게이트 부위의 PR을 제거하고 제2절연막을 도포하는 공정과, 비등방성 식각법을 통하여 게이트 부위에 측벽을 만들고 이를 마스크로하여 기판면까지 제1절연막을 식각공정과, 이후 측벽을 없애고, 전면에 금속을 증착한후 T형 게 이트 금속만 남기고 PR을 제거하는 공정과, 소오스 및 드레인 전극 헝성을 위한 오홈의 금속의 리프트 오프 공정을 포함한다.

Description

T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 T형 단면구조의 게이트 전극을 갖는 메탈 세미 콘덕터 전계효과 트랜지스터의 구조도,
제2도의(A), (B)는 전자빔 리소그라피 방식에 의한 T형 게이트의 제조방법 설명도,
제3도의 (A)-(D)는 포토리소그라피 방식에 의한 T형 게이트의 제조방법 설명도,
제4도의 (A)-(I)는 본 발명에 의한 T형 게이트 금속전구 전계효과 트랜지스터의 제조방법 설명도.

Claims (8)

  1. 기판(1)상에 제1절연막(2)과 PR(3)을 형성하고 게이트 형성부위의 PR(3)을 제거한후 제2절연막(5)을 형성 하는 공정과, 비등방성 식각법으로 게이트 형성부위 에 측벽 (6)을 형성 한후 이를 마스크로하여 기판(1)면까지 제1절연막(2)을 식각하는 공정과, 이후 측벽 (6)을 없애는 식각공정과, 전면에 금속을 증착한후 T형 게이트금속(7)만 남기고 PR (3)을 제거하는 공정을 포함하는 T형 단면구조의 게이트금속 전극을 갖는 전계효과 트랜지스터의 제조방법.
  2. 제1항에 있어서, 제1절연막(2)과 PR(3) 사이에 중간분리층(10)을 형성한 후 T헝 게이트 금속전극을 형성한후 중간분리층 (10)을 없애고 T형 게이트 금속전극 (7)만 남기는 공정을 포함하는 T형 단면구조의 게이트금속전극을 갖는 전계효과 트랜지스터의 제조방법.
  3. 제1항 또는 제2항에 있어서, 상기 측벽 (6)을 이용하여 게이트 부위의 제1절연막(2) 식각시기판(1)내부까지 식각하여 T형 게이트금속 (7')을 형성하는 것을 특징으로 하는 T형 단면구조의 게이트금속전극을 갖는 전계효과 트랜지스터의 제조방법.
  4. 제1항또는 제2항에 있어서, 기판(1) 상에서 게이트 금속(7)을 제외한 전 분분을 제거하고 전면에 제3절연막(9)에 의한 보호막을 형성하는 것을 특징으로 하는 T형 단면 구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법.
  5. 제3항에 있어서, 기판(1)내부에서 부터 형성되는 게이트금속(7')을 제외한 전부분을 제거하고 전면에 제3절연막(9)에 의한 보호막을 형성하는 것을 특징으로 하는 T형 단면 구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법.
  6. 제2항에 있어서, 중간분리층(10)으로서 Ni또는 Ge을 사용하는 것을 특징으로 하는 T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법.
  7. 제3항에 있어서, 측벽 (6)형성 후 이를 미스크로 해서 제1절연막(2) 및 기판내부(1)까지 식각한 이후, 전면에 게이트금속(7)을 증착하는 공정과, 이후 게이트부위 (7")를 제외 한 나머 지 부위 의 PR (3) 및 금속 (7)을 제거하고, 제1절연막 (2)을 모두 없애는 공정과 전면에 제3절연층 (9)으로 보호막을 형성시키는 공정을 포함하는 전계효과 트랜지스터의 제조방법.
  8. 제1항에 있어서, T형 게이트전극을 형성한 후. 제1절연막(2)을 제거하고 T형 게이트전극(7)을 마스크로 오옴의 금속(11)을 증착함으로써 자기 정렬식으로 소스, 드레 인 부를 형성하는 공정을 포함하는 전계효과 트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920009915A 1992-06-09 1992-06-09 T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법 KR0130963B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019920009915A KR0130963B1 (ko) 1992-06-09 1992-06-09 T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법
JP5163927A JP2726219B2 (ja) 1992-06-09 1993-06-08 電界効果トランジスタの製造方法
US08/073,428 US5563079A (en) 1992-06-09 1993-06-09 Method of making a field effect transistor

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KR1019920009915A KR0130963B1 (ko) 1992-06-09 1992-06-09 T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법

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KR0130963B1 KR0130963B1 (ko) 1998-04-14

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US5563079A (en) 1996-10-08
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JP2726219B2 (ja) 1998-03-11

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