KR910021203A - 공통 데이타선 바이어스 구성을 갖는 기억장치 - Google Patents

공통 데이타선 바이어스 구성을 갖는 기억장치

Info

Publication number
KR910021203A
KR910021203A KR1019900006453A KR900006453A KR910021203A KR 910021203 A KR910021203 A KR 910021203A KR 1019900006453 A KR1019900006453 A KR 1019900006453A KR 900006453 A KR900006453 A KR 900006453A KR 910021203 A KR910021203 A KR 910021203A
Authority
KR
South Korea
Prior art keywords
memory
data line
common data
line bias
bias configuration
Prior art date
Application number
KR1019900006453A
Other languages
English (en)
Other versions
KR930007284B1 (ko
Inventor
긴야 미쯔모또
신지 나까자또
요시아끼 야자와
마사노리 오다까
히데아끼 우찌다
노부아끼 미야까와
Original Assignee
가부시끼 가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼 가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼 가이샤 히다찌세이사꾸쇼
Priority to KR1019900006453A priority Critical patent/KR930007284B1/ko
Publication of KR910021203A publication Critical patent/KR910021203A/ko
Application granted granted Critical
Publication of KR930007284B1 publication Critical patent/KR930007284B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019900006453A 1984-06-15 1990-05-08 공통 데이타선 바이어스 구성을 갖는 기억장치 KR930007284B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900006453A KR930007284B1 (ko) 1984-06-15 1990-05-08 공통 데이타선 바이어스 구성을 갖는 기억장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59121820A JPS613390A (ja) 1984-06-15 1984-06-15 記憶装置
JP59-121820 1984-06-15
KR1019850003307A KR930007283B1 (ko) 1984-06-15 1985-05-15 공통 데이타선 바이어스 구성을 갖는 기억장치
KR1019900006453A KR930007284B1 (ko) 1984-06-15 1990-05-08 공통 데이타선 바이어스 구성을 갖는 기억장치

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1019850003307A Division KR930007283B1 (ko) 1984-06-15 1985-05-15 공통 데이타선 바이어스 구성을 갖는 기억장치

Publications (2)

Publication Number Publication Date
KR910021203A true KR910021203A (ko) 1991-12-20
KR930007284B1 KR930007284B1 (ko) 1993-08-04

Family

ID=14820737

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019850003307A KR930007283B1 (ko) 1984-06-15 1985-05-15 공통 데이타선 바이어스 구성을 갖는 기억장치
KR1019900006453A KR930007284B1 (ko) 1984-06-15 1990-05-08 공통 데이타선 바이어스 구성을 갖는 기억장치

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019850003307A KR930007283B1 (ko) 1984-06-15 1985-05-15 공통 데이타선 바이어스 구성을 갖는 기억장치

Country Status (7)

Country Link
US (2) US4829479A (ko)
JP (1) JPS613390A (ko)
KR (2) KR930007283B1 (ko)
DE (1) DE3521480A1 (ko)
GB (1) GB2160378B (ko)
HK (1) HK94590A (ko)
SG (1) SG81890G (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
JP2514810B2 (ja) * 1986-12-01 1996-07-10 ヤマハ発動機株式会社 Ｖベルト式自動変速機
JP2531671B2 (ja) * 1987-03-31 1996-09-04 株式会社東芝 半導体記憶装置
JP2598412B2 (ja) * 1987-07-10 1997-04-09 株式会社日立製作所 半導体記憶装置
JP2593894B2 (ja) * 1987-11-16 1997-03-26 富士通株式会社 半導体記憶装置
JP2542022B2 (ja) * 1987-12-18 1996-10-09 沖電気工業株式会社 電界効果トランジスタ負荷回路
US5027323A (en) * 1988-01-14 1991-06-25 Hitachi, Ltd. Write pulse signal generating circuit for a semiconductor memory device
US4967151A (en) * 1988-08-17 1990-10-30 International Business Machines Corporation Method and apparatus for detecting faults in differential current switching logic circuits
JPH0817034B2 (ja) * 1988-10-24 1996-02-21 三菱電機株式会社 半導体記憶装置
KR0137768B1 (ko) * 1988-11-23 1998-06-01 존 지. 웨브 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
US5126974A (en) * 1989-01-20 1992-06-30 Hitachi, Ltd. Sense amplifier for a memory device
US5218567A (en) * 1989-09-14 1993-06-08 Hitachi, Ltd. Match detection circuit for cache memory apparatus
JP2759689B2 (ja) * 1989-11-24 1998-05-28 松下電器産業株式会社 Ｒａｍの読み出し回路
JP2701506B2 (ja) * 1990-02-08 1998-01-21 日本電気株式会社 半導体メモリ回路
JP2501930B2 (ja) * 1990-02-26 1996-05-29 株式会社東芝 半導体集積回路
JP2550743B2 (ja) * 1990-03-27 1996-11-06 日本電気株式会社 半導体メモリ回路
JP2606403B2 (ja) * 1990-03-30 1997-05-07 日本電気株式会社 半導体メモリ
JP2789779B2 (ja) * 1990-04-14 1998-08-20 日本電気株式会社 メモリ装置
DE69015371T2 (de) * 1990-05-17 1995-07-13 Ibm Lese-/schreibe-/wiederherstellungsschaltung für speichermatrizen.
JPH0474382A (ja) * 1990-07-17 1992-03-09 Fujitsu Ltd 半導体記憶装置
US5229967A (en) * 1990-09-04 1993-07-20 Nogle Scott G BICMOS sense circuit for sensing data during a read cycle of a memory
US5059829A (en) * 1990-09-04 1991-10-22 Motorola, Inc. Logic level shifting circuit with minimal delay
US5257227A (en) * 1991-01-11 1993-10-26 International Business Machines Corp. Bipolar FET read-write circuit for memory
US5235550A (en) * 1991-05-16 1993-08-10 Micron Technology, Inc. Method for maintaining optimum biasing voltage and standby current levels in a DRAM array having repaired row-to-column shorts
JP3385622B2 (ja) * 1992-01-30 2003-03-10 富士通株式会社 スタティックｒａｍ
JPH0636570A (ja) * 1992-07-16 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置のセンスアンプ回路
KR0137083B1 (ko) * 1993-09-14 1998-04-29 세까자와 다다시 반도체 메모리 장치 및 데이타 판독방법
US5532969A (en) * 1994-10-07 1996-07-02 International Business Machines Corporation Clocking circuit with increasing delay as supply voltage VDD
US5521874A (en) * 1994-12-14 1996-05-28 Sun Microsystems, Inc. High speed differential to single ended sense amplifier
KR100196510B1 (ko) * 1995-12-28 1999-06-15 김영환 센스 증폭기
US5757713A (en) * 1996-09-18 1998-05-26 Micron Technology, Inc. Adjustable write voltage circuit for SRAMS
US5907251A (en) * 1996-11-22 1999-05-25 International Business Machines Corp. Low voltage swing capacitive bus driver device
US6057704A (en) * 1997-12-12 2000-05-02 Xilinx, Inc. Partially reconfigurable FPGA and method of operating same
JP3317270B2 (ja) * 1999-03-17 2002-08-26 日本電気株式会社 Ｓｒａｍ装置とその制御方法
FR2803142B1 (fr) * 1999-12-23 2002-02-01 St Microelectronics Sa Circuit integre comprenant un transistor de sortie ayant un temps de passage a zero controle
US7581998B2 (en) * 2005-09-08 2009-09-01 Ngk Spark Plug Co., Ltd. Method for regulating aground electrode position in spark plug

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836975B1 (ko) * 1967-12-06 1973-11-08
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US4151611A (en) * 1976-03-26 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Power supply control system for memory systems
JPS5375828A (en) * 1976-12-17 1978-07-05 Hitachi Ltd Semiconductor circuit
JPS5545207A (en) * 1978-09-26 1980-03-29 Oki Electric Ind Co Ltd Complementary mos inverter circuit unit and its production
JPS5596158A (en) * 1979-01-16 1980-07-22 Olympus Optical Co Medicating tube
JPS5833635B2 (ja) * 1979-12-25 1983-07-21 富士通株式会社 半導体記憶装置
DE3002646C2 (de) * 1980-01-25 1984-05-03 Schoppe & Faeser Gmbh, 4950 Minden Schaltungsanordnung zur Versorgung eines in CMOS-Technik ausgeführten elektronischen digitalen Geräts
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
US4430582A (en) * 1981-11-16 1984-02-07 National Semiconductor Corporation Fast CMOS buffer for TTL input levels
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
JPS5940393A (ja) * 1982-08-31 1984-03-06 Nec Corp メモリ回路
JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier
JPS60103587A (ja) * 1983-11-09 1985-06-07 Toshiba Corp 半導体記憶装置のメモリセルキヤパシタ電圧印加回路
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram
JPS60136989A (ja) * 1983-12-26 1985-07-20 Hitachi Ltd 半導体記憶装置の書き込み回路
JPS60136084A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置

Also Published As

Publication number Publication date
US4829479A (en) 1989-05-09
GB2160378B (en) 1989-02-15
SG81890G (en) 1990-11-23
GB2160378A (en) 1985-12-18
GB8515011D0 (en) 1985-07-17
HK94590A (en) 1990-11-23
KR930007284B1 (ko) 1993-08-04
JPS613390A (ja) 1986-01-09
KR930007283B1 (ko) 1993-08-04
DE3521480A1 (de) 1985-12-19
KR860000658A (ko) 1986-01-30
US5050127A (en) 1991-09-17

Similar Documents

Publication Publication Date Title
KR910021203A (ko) 공통 데이타선 바이어스 구성을 갖는 기억장치
DE3587400D1 (de) Datenspeicherungsanordnung.
DE3481878D1 (de) Magnetooptisches speicherelement.
DE3280445T2 (de) Festwertspeicher.
DE3784323D1 (de) Datenaufzeichnung.
DE3580429D1 (de) Optischer speicher.
DE3583300D1 (de) Optisches aufzeichnungselement.
DE3869158D1 (de) Speicher-leseschaltung.
DE68924635T2 (de) Datenaufzeichnungsgerät.
DE3485970D1 (de) Datenhalteanordnung.
DE3585811D1 (de) Direktzugriffsspeicher.
DE3587708T2 (de) Optisches Speicherelement.
DE3482654D1 (de) Datenspeichergeraet.
DE3580768D1 (de) Datenspeicherelement.
DE3680829D1 (de) Festwertspeicheranordnung.
DE3581345D1 (de) Datenausgabegeraet.
DK315385D0 (da) Direkte fingeraflaesning
DE3582155D1 (de) Supraleitende speicheranordnung.
DE3688543T2 (de) Anzeigedatenspeicher.
DK540285D0 (da) Informationselement
DE3583419D1 (de) Datenspeichergeraet.
DE3673854D1 (de) Speicherschaltung mit schreibschema.
DE3583545D1 (de) Klappanker-lagerung.
FI851159L (fi) Behandling av data om borrhaol.
DE3584954D1 (de) Direktzugriff-lese-/schreibspeicher.

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19960729

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee