KR870001663A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR870001663A
KR870001663A KR1019860005412A KR860005412A KR870001663A KR 870001663 A KR870001663 A KR 870001663A KR 1019860005412 A KR1019860005412 A KR 1019860005412A KR 860005412 A KR860005412 A KR 860005412A KR 870001663 A KR870001663 A KR 870001663A
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South Korea
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semiconductor device
electrodes
metal
substrate
electrode
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KR1019860005412A
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English (en)
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KR900008665B1 (ko
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겐조오 하다다
Original Assignee
마쯔시다덴기산교 가부시기가이샤
다니이 아끼오
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Publication of KR870001663A publication Critical patent/KR870001663A/ko
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Publication of KR900008665B1 publication Critical patent/KR900008665B1/ko

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.

Description

반도체장치의 제조방법
제1도 내지 제3도는 본 발명의 일실시예에 의한 반도체장치의 제조방법의공정을 도시하는 단면도.
* 도면의 주요부분에 대한 부호의 설명
10 : 기판 12 : 금속돌기
14,22 : 전극 16,24 : 반도체장치

Claims (16)

  1. 기관상에 형성시킨 금숙돌기와 제1반도체 장치의 전극을 배열하는 공정과, 상기 기판상의 금속돌기에 제1반도체 장치의 전극을 가압하여 상기 기판으로부터 금속돌기를 제거하여서 이 금속돌기를 상기 제1반도체 장치의 전극에 접합시키는 공정과, 제1반도체 장치에 접합된 금속돌기와 제2반도체 장치의 전극을 배열하는 공정과, 제2반도체 장치의 전극에 금속돌기를 가압하여 상기 제1 및 제2반도체 장치의전극을 함께 접합시키는 공정으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 금속돌기는 Au, Al, Ni, Ag 또는 땜납으로 형성되는 것을 특징으로 하는 반도체 장치의 제조방법.
  3. 제1항에 있어서, 상기 전극은 반도체 장치의 표면영역에 형성되는 것을 특징으로 하는 반도체 장치의 제조방법.
  4. 제1항에 있어서, 수지층이 상기 제1반도체 장치의 상기 전극상에 형성되는 것을 특징으로 하는 반도체 장치의 제조방법.
  5. 제4항에 있어서, 상기 수지층은 접착제로서의 기능을 가지는 것을 특징을 하는 반도체 장치의 제조방법.
  6. 제1항에 있어서, 수지층이 상기 제1반도체 장치의 전극에 접합시킬 상기 금속돌기상에 형성되는 것을 특징으로 하는 반도체장치의 제조방법.
  7. 제6항에 있어서, 상기 수지층은 접착제로서의 기능을 가지는 것을 특징으로 하는 반도체장치의 제조방법.
  8. 제1항에 있어서, 상기 기판은 반도체 장치의 전극에 대응하는 위치에 개구부를 가지는 한편, 상기 금속돌기는 전해 도금법에 의해서 상기 개구부에 형성되는 것을 특징으로 하는 반도체 장치의제조방법.
  9. 제1반도체 장치의 전극에 대응하는 위치에 상기 개구부를 가지는 기판상에 형성된 개구부에 전해도금법을 이용하여 금속돌기를 형성시키는 공정과, 기판상에 형성시킨 상기 금속돌기와 제1반도체장치의 전극을 배열하는 공정과, 상기 기판상의 금속돌기에 제1반도체 장치의 전극을 가압하여 상기기판으로부터 금속돌기를 제거하여서 이 금속돌기를 상기 제1반도체 장치의 전극을 접합시키는 공정과, 제1반도체 장치에 접합된 금속돌기와 제2반도체 장치의 전극을 배열하는 공정과, 제2반도체 장치의 전극에 금속돌기를 가압하여 상기 제1 및 제2반도체 장치의 전극을 함께 접합시키는 공정과, 기판의 개구부에 전해도금법을 이용하여 새로운 돌기를 형성시키는 공정으로 이루어지는 것을 특징으로 하는 반도체 장치의 제조방법.
  10. 제9항에 있어서, 상기 기판은 절연기판과, 이 기판상에 형성된 도전막과, 이 막상에 형성됨과 동시에 상기 개구부를 가지는 내열성막을 포함하는 것을 특징으로 하는 반도체 장치의 제조방법.
  11. 제10항에 있어서, 상기도전막은 TIO막 또는 Pt막인것을 특징으로 하는 반도체 장치의 제도방법.
  12. 반도체 장치의 전극상에 기판에 형성된 금속돌기를 전이접합시키는 공정과, 상기 제1반도체 장치의 전극과 대향하는 전극을 가지는 제2반도체 장치의 전극과 상기 제1반도체 장치의 전극상에 전이접합된 금속돌기를 배열시켜서 가압 및 가열하는 공정과, 상기 제1반도체 장치의 전극과 제2반도체 장치의 전극을 상기 금속돌기를 게재하여 접합시키는 공정으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
  13. 제12항에 있어서, 상기 금속돌기는 Au,Al,Ni,Ag, 또는 땜납으로 형성되는 것을 특징으로 하는 반도체장치의 제조방법.
  14. 제12항에 있어서, 상기 제1반도체 장치의 전극은 상기반도체 장치의 표면영역에 형성되는 것을 특징으로 하는 반도체 장치의 제조방법.
  15. 제12항에 있어서, 수지층이 상기 제1반도체 장치의 전극상에 형성되는 것을 특징으로 하는 반도체장치의 제조방법.
  16. 제12항에 있어서, 수지층이 상기 금속돌기상에 형성되는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860005412A 1985-07-05 1986-07-04 반도체장치의 제조방법 KR900008665B1 (ko)

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EP0208494A2 (en) 1987-01-14
DE3686457D1 (de) 1992-09-24
EP0208494B1 (en) 1992-08-19
DE3686457T2 (de) 1993-02-11
JPH0357618B2 (ko) 1991-09-02
JPS629642A (ja) 1987-01-17
KR900008665B1 (ko) 1990-11-26
US4693770A (en) 1987-09-15

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