KR890016890A - 저융점 글라스를 사용하여 구성부품들을 접합하는 방법 - Google Patents
저융점 글라스를 사용하여 구성부품들을 접합하는 방법 Download PDFInfo
- Publication number
- KR890016890A KR890016890A KR1019890004706A KR890004706A KR890016890A KR 890016890 A KR890016890 A KR 890016890A KR 1019890004706 A KR1019890004706 A KR 1019890004706A KR 890004706 A KR890004706 A KR 890004706A KR 890016890 A KR890016890 A KR 890016890A
- Authority
- KR
- South Korea
- Prior art keywords
- low melting
- melting glass
- component
- glass layer
- glass
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims description 12
- 238000002844 melting Methods 0.000 title claims description 9
- 230000008018 melting Effects 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 3
- 238000010030 laminating Methods 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Joining Of Glass To Other Materials (AREA)
- Ceramic Products (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 서디프(cer-dip)와 같은 결합품의 횡단면도. 제 2 도는 은판에 적층된 저융점 글라스의 측단면도. 제 4 도는 특별 마스크의 평면도.
Claims (6)
- 저융점글라스에 의하여 두 구성부품을 접합하는 방법으로서, a)제 1 결합면을 갖는 접합할 제 1 구성부품을 마련하는 공정. (b) 외주테두리에 다수의 요부를 갖는 저융점글라스를 제 1 결합면에 적층시키는 공정. (c)상기 저융점 글라스층에 제 1 구성부품을.붙이는 공정. (d) 제1 및 제 2 구성 부품과 저융점글라스층을 상기 글라스의 융점이상의 온도로 가열하는 공정. (e) 상기 글라스를 고화시켜 제1 및 제 2 구성부품을 접합시키는 공정. 으로 구성되는 접합방법.
- 제 1 항에 있어서, 상기 요부가 상기 저융점 글라스층의 외주 테두리부근의 글라스층 두께를 감소시키는 접합방법.
- 제 1 항에 있어서, 상기 저융점글라스의 적층공정은 다스크부재로 상기 글라스층을 형성시키는 공정을 포함하며, 상기 마스크 부재는 상기 요부를 형성시키기 위해 배치된 적어도 하나의 돌기를 구비하는 접합방법.
- 제 1 항에 있어서, 제 1 구성부품은 세라믹부재이고, 제 2 구성부품은 금속부재인 접합방법.
- 제 4 항에 있어서, 상기 금속부재는 전기리드인 접합방법.
- 제 4 항에 있어서, 상기 금속부재는 IC칩을 수납하도록 배치되는 전기 도전파인 접합방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8854788A JP2656942B2 (ja) | 1988-04-11 | 1988-04-11 | 低融点ガラス接着による接合体の製造方法,及び接着体 |
JP88-88547 | 1988-04-11 | ||
JP63-88547 | 1988-04-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890016890A true KR890016890A (ko) | 1989-11-30 |
KR0127308B1 KR0127308B1 (ko) | 1998-04-06 |
Family
ID=13945880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890004706A KR0127308B1 (ko) | 1988-04-11 | 1989-04-10 | 저융점 글라스를 사용하여 구성부품들을 접합하는 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5006143A (ko) |
JP (1) | JP2656942B2 (ko) |
KR (1) | KR0127308B1 (ko) |
GB (1) | GB2222586B (ko) |
SG (1) | SG75692G (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200241A (en) * | 1989-05-18 | 1993-04-06 | General Electric Company | Metal-ceramic structure with intermediate high temperature reaction barrier layer |
FR2744843B1 (fr) * | 1996-02-09 | 1998-04-10 | Seb Sa | Procede de realisation de connexion electrique par collage d'une cosse rigide sur une piste conductrice, cosse rigide pour la mise en oeuvre du procede et son application a une plaque chauffante pour recipient chauffant |
US20030164006A1 (en) * | 2001-10-26 | 2003-09-04 | Buchanan Karl H. | Direct bonding of glass articles for drawing |
US6879039B2 (en) * | 2001-12-18 | 2005-04-12 | Broadcom Corporation | Ball grid array package substrates and method of making the same |
CN118020149A (zh) * | 2021-09-27 | 2024-05-10 | 京瓷株式会社 | 光学部件搭载用封装体及光学装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3177576A (en) * | 1961-08-15 | 1965-04-13 | Rca Corp | Method of photocell manufacture by simultaneously sintering the photosensitive material and sealing the cell |
US3325586A (en) * | 1963-03-05 | 1967-06-13 | Fairchild Camera Instr Co | Circuit element totally encapsulated in glass |
US3560180A (en) * | 1968-05-15 | 1971-02-02 | Philco Ford Corp | Glass metal sealing technique |
US3669715A (en) * | 1970-06-17 | 1972-06-13 | Sylvania Electric Prod | Method of preparing a metal part to be sealed in a glass-ceramic composite |
US3768991A (en) * | 1972-06-14 | 1973-10-30 | Diacon | Method for sealing an enclosure for an electronic component |
JPS52103435A (en) * | 1976-02-27 | 1977-08-30 | Hitachi Ltd | Bonding of two objects with aid of low-melting glass |
JPS60195163U (ja) * | 1984-06-05 | 1985-12-26 | アルプス電気株式会社 | 板状半田 |
DE3520085A1 (de) * | 1985-06-05 | 1986-12-11 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum herstellen eines hermetisch verschlossenen bauelementengehaeuses, insbesondere fuer schwingquarze |
-
1988
- 1988-04-11 JP JP8854788A patent/JP2656942B2/ja not_active Expired - Lifetime
-
1989
- 1989-04-10 KR KR1019890004706A patent/KR0127308B1/ko not_active IP Right Cessation
- 1989-04-11 GB GB8908054A patent/GB2222586B/en not_active Expired - Lifetime
-
1990
- 1990-10-12 US US07/596,414 patent/US5006143A/en not_active Expired - Fee Related
-
1992
- 1992-07-28 SG SG75692A patent/SG75692G/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPH01261247A (ja) | 1989-10-18 |
SG75692G (en) | 1992-10-02 |
US5006143A (en) | 1991-04-09 |
GB2222586A (en) | 1990-03-14 |
GB2222586B (en) | 1992-01-15 |
KR0127308B1 (ko) | 1998-04-06 |
GB8908054D0 (en) | 1989-05-24 |
JP2656942B2 (ja) | 1997-09-24 |
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A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20011010 Year of fee payment: 5 |
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LAPS | Lapse due to unpaid annual fee |