KR890016585A - 세라믹-금속 복합물 기판, 그것으로 구성된 회로 기판 및 그 제조방법 - Google Patents

세라믹-금속 복합물 기판, 그것으로 구성된 회로 기판 및 그 제조방법 Download PDF

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KR890016585A
KR890016585A KR1019890005515A KR890005515A KR890016585A KR 890016585 A KR890016585 A KR 890016585A KR 1019890005515 A KR1019890005515 A KR 1019890005515A KR 890005515 A KR890005515 A KR 890005515A KR 890016585 A KR890016585 A KR 890016585A
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copper
surface roughness
less
ceramic
copper member
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다다시 다나까
가즈오 마쯔무라
히로시 고모리따
노부유끼 미즈노야
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아오이 죠오찌
가부시끼 가이샤 도시바
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Abstract

내용 없음

Description

세라믹-금속 복합물 기판, 그것으로 구성된 회로 기판 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본도체 소자가 구리판에 어떻게 장착되는지를 나타내는 본 발명에 따른 회로 기판 구성의 단면도. 제 2 도는 구리판의 중심선 평균 표면조도(Ra) 및 구리의 입자크기 및 납땜 습윤성과의 관계를 나타내는 그래프.

Claims (18)

  1. 마주보는 표면을 가지고 있는 세라믹 기판 및 세라믹 기판의 한 표면에 직접 접합된 한면을 가지는 구리판을 포함하는 세라믹-금속복합물기판에 있어서, 구리판의 외부표면의 중심선 평균 표면조도(Ra)가 3㎛이하이고, 구리판의 외부표면의 최대 표면조도(Rmax)가 18㎛이하인 것을 특징으로 하는 세라믹-금속복합물기판.
  2. 제 1 항에 있어서, 구리판의 외부표면의 중심선 평균 표면조도(Ra)가 1㎛이하이고, 구리판의 외부표면의최대 표면조도(Rmax)가 8㎛이하인 것을 특징으로 하는 세라믹-금속복합물기판.
  3. 제 1 항에 있어서, 구리판이 100-3000ppm 범위의 산소 함량을 가진 것을 특징으로 하는 세라믹-금속복합물기판.
  4. (a) 마주보는 표면을 가진 세라믹 기판 및 마주보는 면을 가진 구리판을 포함하고, 구리판의 두면중 하나는 세라믹 기판 표면중 하나에 직접 되고 접합 다른면은 하나이상의 장착 구역 및 하나 이상의 전극 구역을 포함하며, 상기 하나 이상의 구리판의 장착 구역의 외부 표면의 중심선 평균 표면 조도(Ra)가 3㎛이하이며 상기 하나 이상의 장착 구역의 외부 표면의 최대 표면 조도(Rmax)가 18㎛ 이하인 세라믹-금속복합물기판; (b) 상기 구리판의 장착구역상에 장착된 하나이상의전기 소자; 및 (c) 상기 하나이상의 전기소자를 상기 하나이상의 전극구역과 전기적으로 연결하는 하나이상의 연결 와이어로 구성된 것을 특징으로 하는 회로기판.
  5. 제 4 항에 있어서, 구리판상의 하나이상의 장착구역의 외부표면의 중심선 평균 표면조도(Ra)가 1㎛이하이고 상기 하나이상의 장착구역의 외부표면의 최대 표면조도(Rmax)가 8㎛이하인 것을 특징으로 하는 회로기판.
  6. 제 4 항에 있어서, 상기 구리판이 100-3000ppm 범위의 산소함량을 가지는 것을 특징으로 하는 회로기판.
  7. 구리부재를 세라믹 기판의 표면상의 원하는 위치에 접촉배치시키고, 구리부재를 직접 접하시키기 위하여 구리의 융점 보다는 낮고 구리 및 산소의 공용융점 보다는 높은 온도로 가열하는 단계로 구성된 세라믹-금속복합물기판의 제조방법에 있어서, 상기 가열단계후의 상기 구리부재의 중심선 평균 표면조도(Ra)가 3㎛이하이고, 상기 가열 단계후의 상기 구리의 최대 표면조도(Rmax)가 18㎛이하인 것을 특징으로 하는 세라믹-금속복합물기판의 제조방법.
  8. 제 7 항에 있어서, 상기 가열 단계후의 구리부재의 중심선 평균 표면조도(Ra)가 1㎛이하이고, 상기 가열단계후의 구리부재의 최대 표면조도(Rmax)가 8㎛ 이하인 것을 특징으로 하는 방법.
  9. 제 7 항에 있어서, 상기 구리부재가 상기 세라믹 부재에 접촉배치되기 전에 원하는 회로 패턴의 형태로 사전 성형되는 것을 특징으로 하는 방법.
  10. 제 7 항에 있어서, 상기 구리부재가 연속적인 판의 형태로 상기 기판에 접촉배치되고, 상기 방법이 상기기판에 접합한 후 상기 구리판을 원하는 회로 패턴으로 성형하기 위하여 상기 구리부재를 에칭 처리하는 단계를 포함하는것을 특징으로 하는 하는 방법.
  11. 제 10 항에 있어서, 에칭된 구리부재를 광택처리하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  12. 제 11 항에 있어서, 상기 광택처리가 화학적 광택처리인 것을 특징으로 하는 방법.
  13. (a) 구리부재를 세라믹 기판의 표면상의 원하는 위치에 접촉배치시키고, 구리부재를 상기 세라믹 기판에 직접 접합시키기 위하여 상기 생성된 어셈블리를 구리의 융점보다는 낮고 구리 및 산소의 공융점 이상의 온도로 가열하며, 상기구리부재는 하나이상의 장착구역 및 하나이상의 전극구역을 포함하는 매끈한 면을 포함하며, 상기 가열단계후의 상기 구리부재의 중심선 평균 표면조도(Ra)가 3㎛이하이고 최대 표면조도(Rmax)가 18㎛가 되는 최초 표면조도를 가지도록 상기구리부재를 선택하는 것에 의해 세라믹-금속복합물기판을 제조하고; (b) 하나이상의 전기소자를 구리판의 하나이상의 장착구역상에 장착하고; (c) 상기 하나이상의 전기소자 및 상기 하나이상의 전극구역에 연결용 와이어를 전기적으로 연결하는 단계로 구성된 것을 특징으로 하는 회로기판의 제조방법.
  14. 제 13 항에 있어서, 구리부재의 중심선 평균 표면조도(Ra)가 1㎛이하이고 최대 표면조도(Rmax)가 8㎛이하인 것을 특징으로 하는 방법.
  15. 제 13 항에 있어서, 상기 구리판이 상기 세라믹 기판에 접촉배치되기 전에 원하는 회로패턴의 형태의 사전 성형되는 것을 특징으로 하는 방법.
  16. 제 13 항에 있어서, 상기 구리부재가 연속적인 판 형태로 상기 기판에 접촉배치되고 상기 구리부재를 상기 세라믹 기판에 접합한 후 원하는 회로패턴으로 성형하기 위하여 상기 구리부재를 에칭처리를 하는 것을 특징으로 하는방법.
  17. 제 16 항에 있어서, 상기 에칭된 구리부재를 광택처리를 시키는 단계를 더 포함하는 것을 특징으로 하는방법.
  18. 제 17 항에 있어서, 상기 광택처리가 화학적 광택처리인 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005515A 1988-04-25 1989-04-25 세라믹-금속복합물 기판, 그것으로 구성된 회로기판 및 그 제조 방법 KR910004923B1 (ko)

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DE68927531T2 (de) 1997-05-15
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EP0681322A3 (en) 1998-01-21
EP0681322A2 (en) 1995-11-08
EP0339881B1 (en) 1996-12-11
KR910004923B1 (ko) 1991-07-18
US4959507A (en) 1990-09-25
DE68927531D1 (de) 1997-01-23
US4987677A (en) 1991-01-29

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