KR850000787A - 반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Raticle)의 검사방법 - Google Patents

반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Raticle)의 검사방법 Download PDF

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Publication number
KR850000787A
KR850000787A KR1019840002878A KR840002878A KR850000787A KR 850000787 A KR850000787 A KR 850000787A KR 1019840002878 A KR1019840002878 A KR 1019840002878A KR 840002878 A KR840002878 A KR 840002878A KR 850000787 A KR850000787 A KR 850000787A
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South Korea
Prior art keywords
pattern
reticle
semiconductor device
inspection method
manufacturing semiconductor
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KR1019840002878A
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English (en)
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KR890003904B1 (ko
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쇼오고(외 1) 마쓰이
Original Assignee
야마모도 다꾸마
후지쑤 가부시기 가이샤
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Publication of KR850000787A publication Critical patent/KR850000787A/ko
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Publication of KR890003904B1 publication Critical patent/KR890003904B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음.

Description

반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Reticle)의 검사방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명을 설명하기 위한 제1도의 동일패턴을 갖는 레티클의 도형. 제4도는 본 발명에 대한 레티클검사기의 블록선도. 제5도는 본 발명에 대한 레티클검사기의 기능을 설명하는 파형도.

Claims (1)

  1. 포토 마스크 레티클(Photo mask Reticle)로 부터 얻어지는 1차패턴과 다수의 2차 패턴들에서 선택되는 패턴의 패턴정보를 포토 마스크 레티클의 제작에 이용되는 설계 데이터와 비교하고, 또 포토마스크레티클로 부터 얻어지는 선택된 패턴을 제외한 2차 패턴들의 패턴정보를 선택된 패턴정보와 비교하여서 포토 마스크 레티클의 패턴들을 검사하는 것을 특징으로 하는 자체 개별의 모양을 가지고 있는 1차패턴과 각각이 동일한 모양과 크기를 가지고 있는 2차 패턴들을 가진 반도체소자 제작을 위한 포토 마스크레티클의 검사방법.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019840002878A 1983-06-23 1984-05-25 반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Reticle)의 검사방법 KR890003904B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11323083A JPH0750664B2 (ja) 1983-06-23 1983-06-23 レチクルの検査方法
JP58-113230 1983-06-23
JP113230 1983-06-23

Publications (2)

Publication Number Publication Date
KR850000787A true KR850000787A (ko) 1985-03-09
KR890003904B1 KR890003904B1 (ko) 1989-10-10

Family

ID=14606857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840002878A KR890003904B1 (ko) 1983-06-23 1984-05-25 반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Reticle)의 검사방법

Country Status (5)

Country Link
US (1) US5125040A (ko)
EP (1) EP0129751B1 (ko)
JP (1) JPH0750664B2 (ko)
KR (1) KR890003904B1 (ko)
DE (1) DE3475226D1 (ko)

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US5307421A (en) * 1992-10-14 1994-04-26 Commissariat A L'energie Atomique Process for producing a synthesized reference image for the inspection of objects and apparatus for performing the same
TW285721B (ko) * 1994-12-27 1996-09-11 Siemens Ag
JP3515199B2 (ja) * 1995-01-06 2004-04-05 大日本スクリーン製造株式会社 欠陥検査装置
KR960035944A (ko) * 1995-03-28 1996-10-28 김주용 반도체 소자 제조시 불량분석 방법
GB2307547B (en) * 1995-11-22 2000-02-16 Europ Gas Turbines Ltd A method of detecting manufacturing errors in an article
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
JP3566470B2 (ja) * 1996-09-17 2004-09-15 株式会社日立製作所 パターン検査方法及びその装置
US6608676B1 (en) * 1997-08-01 2003-08-19 Kla-Tencor Corporation System for detecting anomalies and/or features of a surface
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
JP3201471B2 (ja) * 1998-04-24 2001-08-20 日本電気株式会社 レティクル検査装置
US7463765B2 (en) * 2003-02-25 2008-12-09 Lamda-Lite Enterprises Incorporated System and method for detecting and reporting fabrication defects using a multi-variant image analysis
US7558419B1 (en) * 2003-08-14 2009-07-07 Brion Technologies, Inc. System and method for detecting integrated circuit pattern defects
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
US7869645B2 (en) * 2008-07-22 2011-01-11 Seiko Epson Corporation Image capture and calibratiion
WO2013106101A1 (en) * 2012-01-13 2013-07-18 Kla-Tencor Corporation Method and appparatus for database-assisted requalification reticle inspection
KR102409943B1 (ko) 2017-11-29 2022-06-16 삼성전자주식회사 결함 검출 방법 및 이를 수행하기 위한 장치

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Publication number Priority date Publication date Assignee Title
US4056716A (en) * 1976-06-30 1977-11-01 International Business Machines Corporation Defect inspection of objects such as electronic circuits
JPS5915381B2 (ja) * 1978-10-16 1984-04-09 日本電信電話株式会社 パタ−ン検査法
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Also Published As

Publication number Publication date
JPH0750664B2 (ja) 1995-05-31
US5125040A (en) 1992-06-23
JPS605522A (ja) 1985-01-12
EP0129751A3 (en) 1985-09-11
KR890003904B1 (ko) 1989-10-10
EP0129751B1 (en) 1988-11-17
DE3475226D1 (en) 1988-12-22
EP0129751A2 (en) 1985-01-02

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