KR930003264A - 위상 시프트마스크를 사용한 패턴 형성방법 - Google Patents

위상 시프트마스크를 사용한 패턴 형성방법 Download PDF

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Publication number
KR930003264A
KR930003264A KR1019920011054A KR920011054A KR930003264A KR 930003264 A KR930003264 A KR 930003264A KR 1019920011054 A KR1019920011054 A KR 1019920011054A KR 920011054 A KR920011054 A KR 920011054A KR 930003264 A KR930003264 A KR 930003264A
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KR
South Korea
Prior art keywords
phase shift
exposure
shift mask
forming method
pattern forming
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KR1019920011054A
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English (en)
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KR100239813B1 (ko
Inventor
히데오 시미즈
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오가 노리오
소니 가부시기가이샤
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Publication of KR930003264A publication Critical patent/KR930003264A/ko
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Publication of KR100239813B1 publication Critical patent/KR100239813B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음.

Description

위상 시프트마스크를 사용한 패턴 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1에 사용한 위상시프트마스크의 구성을 도시한 평면도,
제2도는 실시예 1에서 형성할 패턴도(SRAM의 LOCOS 패턴예),
제3도는 제1도의 마스크의 광강도분포시뮬레이션도,
제4도는 실시예 1의 2회째 노광에 사용하는 2매째의 마스크의 광강도시뮬레이션도,
제5도는 실시예 1에 있어서의 대비(對比)의 통상노광법에 의한 광강도분포시뮬레이션도,
제6도는 실시예 2의 마스크의 광강도시뮬레이션도,
제7도는 실시예 2에 있어서의 대비의 종래의 위상시프법으로 서브시프터를 만든 예의 도면,
제8도는 제7도의 패턴의 광강도시뮬레이션도,
제9도는 실시예 2에서 형성할 기판상의 콘택트 홀 패턴도,
제10도는 실시예 2에 있어서의 대비의 통상노광법에 의한 광강도분포시뮬레이션도.

Claims (2)

  1. 제1, 제2의 최소한 2회의 노광을 행하고, 최소한 어느 1회의 노광은 위상시프트마스크를 사용한 노광이며, 최소한 다른 어느 1회의 노광은 상기 위상시프트마스크의 위상시프트경계부의 광량보상의 노광인 것을 특징으로 하는 위상시프트마스크를 사용한 패턴 형성방법.
  2. 기판상에서의 패턴간 거리가 2.4×λ/NA 이하인 패턴을 위상시프트마스크를 사용하여 형성하는 패턴형성방법으로서, 제1, 제2의 최소한 2회의 노광을 행하고, 최소한 어느 1회의 노광은 위상시프트마스크클 사용한 노광인 것을 특징으로 하는 위상시프트마스크를 사용한 노광방법. (단 λ : 노광광의 파장, NA : 노광기의 개구수).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920011054A 1991-07-29 1992-06-25 위상시프트마스크를 사용한 패턴형성방법 KR100239813B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21147391A JP3163666B2 (ja) 1991-07-29 1991-07-29 位相シフトマスクを用いたパターン形成方法
JP91-211,473 1991-07-29

Publications (2)

Publication Number Publication Date
KR930003264A true KR930003264A (ko) 1993-02-24
KR100239813B1 KR100239813B1 (ko) 2000-01-15

Family

ID=16606530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011054A KR100239813B1 (ko) 1991-07-29 1992-06-25 위상시프트마스크를 사용한 패턴형성방법

Country Status (3)

Country Link
US (1) US5432044A (ko)
JP (1) JP3163666B2 (ko)
KR (1) KR100239813B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020038531A (ko) * 2000-11-17 2002-05-23 니시가키 코지 패턴 형성 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
US5869212A (en) * 1996-05-31 1999-02-09 Kabushiki Kaisha Toshiba Integrated circuit photofabrication masks and methods for making same
JPH1064788A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置の製造方法と露光用マスク
US5883813A (en) * 1997-03-04 1999-03-16 International Business Machines Corporation Automatic generation of phase shift masks using net coloring
US5959325A (en) 1997-08-21 1999-09-28 International Business Machines Corporation Method for forming cornered images on a substrate and photomask formed thereby
US6117625A (en) * 1999-03-08 2000-09-12 Cymbolic Sciences Inc. Method and apparatus for creating a composite image by the tiling of multiple image frames
JP2000277427A (ja) * 1999-03-29 2000-10-06 Canon Inc デバイス製造方法
JP2002260983A (ja) * 2001-02-28 2002-09-13 Nec Corp Ｅｂ転写マスク及びその製造方法
US6757886B2 (en) 2001-11-13 2004-06-29 International Business Machines Corporation Alternating phase shift mask design with optimized phase shapes
US6664011B2 (en) 2001-12-05 2003-12-16 Taiwan Semiconductor Manufacturing Company Hole printing by packing and unpacking using alternating phase-shifting masks
JP3938694B2 (ja) * 2002-01-17 2007-06-27 Ｎｅｃエレクトロニクス株式会社 パターン形成方法
US7235348B2 (en) * 2003-05-22 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642634A1 (de) * 1976-09-22 1978-03-23 Siemens Ag Verfahren zum justieren von belichtungsmasken relativ zu einer substratscheibe
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020038531A (ko) * 2000-11-17 2002-05-23 니시가키 코지 패턴 형성 방법

Also Published As

Publication number Publication date
JPH0695353A (ja) 1994-04-08
KR100239813B1 (ko) 2000-01-15
JP3163666B2 (ja) 2001-05-08
US5432044A (en) 1995-07-11

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