KR960026072A - 콘택마스크 - Google Patents

콘택마스크 Download PDF

Info

Publication number
KR960026072A
KR960026072A KR1019940032627A KR19940032627A KR960026072A KR 960026072 A KR960026072 A KR 960026072A KR 1019940032627 A KR1019940032627 A KR 1019940032627A KR 19940032627 A KR19940032627 A KR 19940032627A KR 960026072 A KR960026072 A KR 960026072A
Authority
KR
South Korea
Prior art keywords
quartz substrate
contact mask
layer pattern
phase inversion
inversion layer
Prior art date
Application number
KR1019940032627A
Other languages
English (en)
Other versions
KR0158904B1 (ko
Inventor
안창남
김흥일
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940032627A priority Critical patent/KR0158904B1/ko
Priority to US08/563,769 priority patent/US5897975A/en
Priority to TW084112693A priority patent/TW283251B/zh
Priority to GB9524589A priority patent/GB2295694B/en
Priority to DE19545163A priority patent/DE19545163C2/de
Publication of KR960026072A publication Critical patent/KR960026072A/ko
Application granted granted Critical
Publication of KR0158904B1 publication Critical patent/KR0158904B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 콘택마스크에 관한 것으로, 석영기판 상부에 위상반전층패턴을 일정크기 일정간격을 유지하고 형성함으로써 일정크기로 석영기판을 노출시켜 위상반전층패턴과 석영기판의 위상반전효과를 이용하여 콘택마스크를 형성하되, 위상반전층패턴과 노출된 석영기판의 폭은 노광공정시 사용하는 광원의 파장보다 크게 형성함으로써 미세콘택홀을 형성할 수 있어 반도체소자의 초고집적화를 가능하게 하는 기술이다.

Description

콘택마스크
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 콘택마스크를 도시한 평면도, 제2도는 본 발명의 제2실시예에 따른 콘택마스크를 도시한 평면도, 제3도는 본 발명의 제3실시예에 따른 콘택마스크를 도시한 평면도, 제4A도 내지 제4C도는 본 발명의 제2실시예에 따른 광강도 프로파일을 도시한 개략도.

Claims (7)

  1. 석영기판 상부 가장자리부에 크롬패턴이 형성된 콘택마스크에 있어서, 상기 석영기판 중앙부에 일정한 크기로 주기적으로 형성된 위상반전층패턴이 구비된 콘택마스크.
  2. 제1항에 있어서, 상기 위상반전층패턴의 선폭은 노광공정시 사용하는 광원의 파장보다 넓게 형성된 것을 특징으로 하는 콘택마스크.
  3. 제1항에 있어서, 상기 콘택마스크는 상기 석영기판, 위상반전층패턴 및 크롬패턴이 주기적으로 형성된 것을 특징으로 하는 콘택마스크.
  4. 석영기판 상부 가장자리부에 크롬패턴이 형성된 콘택마스크에 있어서, 상기 석영기판을 주기적으로 노출시키는 위상반전층패턴이 형성되되, 상기 위상반전층패턴은 상기 석영기판을 상하좌우로 예정된 만큼 노출시키며 형성된 상기 위상반전층패턴이 구비된 콘택마스크.
  5. 제4항에 있어서, 상기 위상반전층패턴과 노출된 석영기판은 정방형으로 형성된 것을 특징으로 하는 콘택마스크.
  6. 제4항에 있어서, 상기 위상반전층패턴과 노출된 석영기판의 폭은 노광공정시 사용되는 광원의 파장이 갖는 선폭보다 크게 형성된 것을 특징으로 하는 콘택마스크.
  7. 석영기판 상부 가장자리에 형성되고 중앙부에 세로방향으로 형성된 크롬패턴이 구비된 콘택마스크에 있어서, 상기 노출된 석영기판 상부에 일정한 크기의 위상반전층패턴이 가로 방향으로 일정한 간격을 갖고 구비된 콘택마스크.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940032627A 1994-12-02 1994-12-02 콘택마스크 KR0158904B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019940032627A KR0158904B1 (ko) 1994-12-02 1994-12-02 콘택마스크
US08/563,769 US5897975A (en) 1994-12-02 1995-11-28 Phase shift mask for formation of contact holes having micro dimension
TW084112693A TW283251B (ko) 1994-12-02 1995-11-29
GB9524589A GB2295694B (en) 1994-12-02 1995-12-01 Phase shift mask for formation of contact holes having micro dimension
DE19545163A DE19545163C2 (de) 1994-12-02 1995-12-04 Phasenschiebermaske zur Bildung von Kontaktlöchern mit Mikroabmessung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940032627A KR0158904B1 (ko) 1994-12-02 1994-12-02 콘택마스크

Publications (2)

Publication Number Publication Date
KR960026072A true KR960026072A (ko) 1996-07-20
KR0158904B1 KR0158904B1 (ko) 1999-02-01

Family

ID=19400198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940032627A KR0158904B1 (ko) 1994-12-02 1994-12-02 콘택마스크

Country Status (5)

Country Link
US (1) US5897975A (ko)
KR (1) KR0158904B1 (ko)
DE (1) DE19545163C2 (ko)
GB (1) GB2295694B (ko)
TW (1) TW283251B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422955B1 (ko) * 1996-08-21 2004-06-12 주식회사 하이닉스반도체 위상시프트마스크

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6277527B1 (en) 1999-04-29 2001-08-21 International Business Machines Corporation Method of making a twin alternating phase shift mask
WO2001022164A1 (de) * 1999-09-17 2001-03-29 Infineon Technologies Ag Kontaktlochherstellung mit hilfe sich kreuzender phasensprungkanten einer einzigen phasenmaske
US6376130B1 (en) * 2000-02-22 2002-04-23 Micron Technology, Inc. Chromeless alternating reticle for producing semiconductor device features
US6503666B1 (en) * 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US6811935B2 (en) 2000-07-05 2004-11-02 Numerical Technologies, Inc. Phase shift mask layout process for patterns including intersecting line segments
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
US7083879B2 (en) 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
DE10048151B4 (de) * 2000-09-28 2009-04-09 Qimonda Ag Verfahren zum lithographischen Strukturieren einer Photoresistschicht
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6901575B2 (en) 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6551750B2 (en) 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6721938B2 (en) 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
KR20030002796A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 레티클 제조방법 및 오버레이 패턴 형성방법
US6523165B2 (en) 2001-07-13 2003-02-18 Numerical Technologies, Inc. Alternating phase shift mask design conflict resolution
US7178128B2 (en) 2001-07-13 2007-02-13 Synopsys Inc. Alternating phase shift mask design conflict resolution
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6735752B2 (en) 2001-09-10 2004-05-11 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process features created by interactions between cells
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US6981240B2 (en) 2001-11-15 2005-12-27 Synopsys, Inc. Cutting patterns for full phase shifting masks
US6998198B2 (en) 2001-11-30 2006-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Contact hole printing by packing and unpacking
US6841310B2 (en) * 2002-02-05 2005-01-11 Micron Technology, Inc. Radiation patterning tools, and methods of forming radiation patterning tools
US7122281B2 (en) 2002-02-26 2006-10-17 Synopsys, Inc. Critical dimension control using full phase and trim masks
US6605481B1 (en) 2002-03-08 2003-08-12 Numerical Technologies, Inc. Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
US6704921B2 (en) 2002-04-03 2004-03-09 Numerical Technologies, Inc. Automated flow in PSM phase assignment
US6785879B2 (en) 2002-06-11 2004-08-31 Numerical Technologies, Inc. Model-based data conversion
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
TWI288437B (en) * 2005-12-30 2007-10-11 Nanya Technology Corp Method to define a pattern having shrunk critical dimension
US7838178B2 (en) 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168231A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置の製造におけるエツチング方法
JPS63200152A (ja) * 1987-02-17 1988-08-18 Matsushita Electronics Corp 半導体製造用マスク
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
DE69131497T2 (de) * 1990-06-21 2000-03-30 Matsushita Electronics Corp Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben
JPH0827534B2 (ja) * 1990-09-11 1996-03-21 三菱電機株式会社 フォトマスク
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置
JPH04216548A (ja) * 1990-12-18 1992-08-06 Mitsubishi Electric Corp フォトマスク
JPH04221954A (ja) * 1990-12-25 1992-08-12 Nec Corp フォトマスク
US5194344A (en) * 1991-03-26 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles including chemically mechanically planarizing
US5364716A (en) * 1991-09-27 1994-11-15 Fujitsu Limited Pattern exposing method using phase shift and mask used therefor
US5256505A (en) * 1992-08-21 1993-10-26 Microunity Systems Engineering Lithographical mask for controlling the dimensions of resist patterns
US5300379A (en) * 1992-08-21 1994-04-05 Intel Corporation Method of fabrication of inverted phase-shifted reticle
US5881125A (en) * 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
US5415952A (en) * 1992-10-05 1995-05-16 Fujitsu Limited Fine pattern lithography with positive use of interference
US5458999A (en) * 1993-06-24 1995-10-17 Szabo; Gabor Interferometric phase shifting method for high resolution microlithography
KR0128828B1 (ko) * 1993-12-23 1998-04-07 김주용 반도체 장치의 콘택홀 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422955B1 (ko) * 1996-08-21 2004-06-12 주식회사 하이닉스반도체 위상시프트마스크

Also Published As

Publication number Publication date
KR0158904B1 (ko) 1999-02-01
GB2295694A (en) 1996-06-05
TW283251B (ko) 1996-08-11
GB2295694B (en) 1998-08-05
GB9524589D0 (en) 1996-01-31
US5897975A (en) 1999-04-27
DE19545163C2 (de) 2003-10-02
DE19545163A1 (de) 1996-06-05

Similar Documents

Publication Publication Date Title
KR960026072A (ko) 콘택마스크
KR950001887A (ko) 에너지 절약형 포토마스크
KR950001919A (ko) 회절빛 제어 마스크
KR100214271B1 (ko) 콘택홀용 위상 반전 마스크
KR970016775A (ko) 정렬오차 측정용 패턴이 구비된 위상반전 마스크
KR950021058A (ko) 위상반전마스크 제조방법
KR960005756A (ko) 반도체 소자 제조용 포토 마스크 제작 방법
KR950034748A (ko) 포토레지스트 패턴 형성방법
KR940016571A (ko) 반도체 소자의 마스크 패턴 제조 방법
KR970048978A (ko) 반도체 메모리 소자 제조시 감광층 패턴을 정확하게 형성하기 위한 포토마스크
KR970008372A (ko) 반도체장치의 미세 패턴 형성방법
KR100294646B1 (ko) 위상반전 마스크
KR970016789A (ko) 위상반전 마스크 및 그 제조방법
KR970016787A (ko) 좁은 피치 패턴을 위한 포토마스크
KR970022526A (ko) 반도체패턴 형성방법 및 이에 사용되는 포토마스크
KR970048992A (ko) 반도체 리소그라피 방법, 이에 사용되는 포토마스크 및 그 제조방법
KR970048925A (ko) 반도체 장치의 제조에 사용되는 마스크
KR960024645A (ko) 반도체소자의 콘택용 노광마스크
KR960026081A (ko) 포토마스크
KR970016772A (ko) 위상반전마스크
KR950001917A (ko) 반도체 소자의 패턴 형성 방법
KR970016479A (ko) 미세 패턴 형성 방법
KR950012595A (ko) 후면 광필터 마스크 및 그 제조방법
KR960024648A (ko) 반도체 소자 제조용 포토 마스크
GB9613662D0 (en) Light exposure mask and method for forming semiconductor devices

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120720

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20130723

Year of fee payment: 16

EXPY Expiration of term