KR950001919A - 회절빛 제어 마스크 - Google Patents

회절빛 제어 마스크 Download PDF

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Publication number
KR950001919A
KR950001919A KR1019930011746A KR930011746A KR950001919A KR 950001919 A KR950001919 A KR 950001919A KR 1019930011746 A KR1019930011746 A KR 1019930011746A KR 930011746 A KR930011746 A KR 930011746A KR 950001919 A KR950001919 A KR 950001919A
Authority
KR
South Korea
Prior art keywords
diffraction
light control
transparent substrate
diffraction light
shape
Prior art date
Application number
KR1019930011746A
Other languages
English (en)
Other versions
KR960011461B1 (ko
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930011746A priority Critical patent/KR960011461B1/ko
Priority to TW083105646A priority patent/TW239222B/zh
Priority to DE4422038A priority patent/DE4422038C2/de
Priority to JP14359994A priority patent/JPH081890B2/ja
Priority to US08/266,173 priority patent/US5571641A/en
Publication of KR950001919A publication Critical patent/KR950001919A/ko
Priority to US08/695,297 priority patent/US5698350A/en
Application granted granted Critical
Publication of KR960011461B1 publication Critical patent/KR960011461B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 소정의 두께를 갖는 투명기판(12)과; 상기 투명기판(12) 표면에 각각 일정한 간격을 이루며 형성되되, 소정의 크기와 형태를 갖는 다수의 회절 유도용 패턴(11)과; 상기 회절 유도용 패턴(11)이 형성된 투명기판(12) 표면의 반대쪽 표면에 각각 소정의 간격을 이루며 형성되되, 상기 회절 유도용 패턴(11)과 오버랩(overlap)되지 않게 형성되며, 소정의 크기와 형태를 갖는 다수의 회절빛 제어용 패턴(13)을 포함하여 이루어지는 것을 특징으로 하는 회절빛 제어 마스크에 관한 것으로, 노광공정의 분해능 및 촛점심도를 높이므로써 반도체 소자의 고집적화에 따른 미세패턴의 해상도를 향상시키는 효과가 있다.

Description

회절빛 제어 마스크
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 회절빛 제어 마스크에 의한 노광빛 경로 개념도, 제4도는 본 발명에 따른 회절빛 제어 마스크의 단면도.

Claims (1)

  1. 소정의 두께를 갖는 투명기판(12)과; 상기 투명기판(12) 표면에 각각 일정한 간격을 이루며 형성되되, 소정의 크기와 형태를 갖는 다수의 회절 유도용 패턴(11)과; 상기 회절 유도용 패턴(11)이 형성된 투명기판(12) 표면의 반대쪽 표면에 각각 소정의 간격을 이루며 형성되되, 상기 회절 유도용 패턴(11)과 오버랩(overlap)되지 않게 형성되며, 소정의 크기와 형태를 갖는 다수의 회절빛 제어용 패턴(13)을 포함하여 이루어지는 것을 특징으로 하는 회절빛 제어 마스크.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930011746A 1993-06-25 1993-06-25 회절빛 제어 마스크 KR960011461B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019930011746A KR960011461B1 (ko) 1993-06-25 1993-06-25 회절빛 제어 마스크
TW083105646A TW239222B (ko) 1993-06-25 1994-06-22
DE4422038A DE4422038C2 (de) 1993-06-25 1994-06-23 Zum Herstellen von Halbleiterbauelementen verwendete Diffraktionsmaske
JP14359994A JPH081890B2 (ja) 1993-06-25 1994-06-24 半導体素子の露光方法およびダミーマスク
US08/266,173 US5571641A (en) 1993-06-25 1994-06-27 Diffraction mask for the fabrication of semiconductor devices
US08/695,297 US5698350A (en) 1993-06-25 1996-08-09 Light exposure method for the fabrication of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930011746A KR960011461B1 (ko) 1993-06-25 1993-06-25 회절빛 제어 마스크

Publications (2)

Publication Number Publication Date
KR950001919A true KR950001919A (ko) 1995-01-04
KR960011461B1 KR960011461B1 (ko) 1996-08-22

Family

ID=19358076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930011746A KR960011461B1 (ko) 1993-06-25 1993-06-25 회절빛 제어 마스크

Country Status (5)

Country Link
US (2) US5571641A (ko)
JP (1) JPH081890B2 (ko)
KR (1) KR960011461B1 (ko)
DE (1) DE4422038C2 (ko)
TW (1) TW239222B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792647A (ja) * 1993-09-27 1995-04-07 Nec Corp ホトマスク
KR100253580B1 (ko) * 1996-10-02 2000-04-15 김영환 스티칭 노광 공정에 사용되는 마스크
US6040892A (en) * 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
US6379868B1 (en) * 1999-04-01 2002-04-30 Agere Systems Guardian Corp. Lithographic process for device fabrication using dark-field illumination
US20020180608A1 (en) * 2001-05-04 2002-12-05 Sphericon Ltd. Driver alertness monitoring system
US6857220B2 (en) * 2001-06-21 2005-02-22 Bobby D. King Flexible fishing lure tails and appendages
US20040223206A1 (en) * 2003-02-14 2004-11-11 Peterman Mark C. Optical lithography using both photomask surfaces
US6982135B2 (en) 2003-03-28 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern compensation for stitching
EP1664858A1 (en) * 2003-07-24 2006-06-07 Explay Ltd. Method for production of micro-optics structures
KR100598497B1 (ko) * 2003-12-31 2006-07-10 동부일렉트로닉스 주식회사 이중 노광 패턴 형성 방법
KR100790292B1 (ko) * 2006-06-28 2008-01-02 주식회사 하이닉스반도체 반도체 소자의 미세패턴 형성 방법
DE102015117556A1 (de) * 2015-10-15 2017-04-20 Universität Kassel Mikrostruktur und Verfahren zur Herstellung einer Mikrostruktur in einer Fotolithographietechnik
JP6645371B2 (ja) * 2016-07-15 2020-02-14 オムロン株式会社 光デバイス及び立体表示方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223083A (en) * 1977-12-27 1980-09-16 Tektronix, Inc. Virtual mask exposure system for CRT screen manufacture
US4947413A (en) * 1988-07-26 1990-08-07 At&T Bell Laboratories Resolution doubling lithography technique
JPH02101423A (ja) * 1988-10-11 1990-04-13 Ricoh Co Ltd 光学的読取装置
JP2630694B2 (ja) * 1991-07-12 1997-07-16 日本電信電話株式会社 投影露光装置用マスク
DE69215942T2 (de) * 1991-04-05 1997-07-24 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Verfahren und System zur optischen Projetkionsbelichtung
JP3250563B2 (ja) * 1992-01-17 2002-01-28 株式会社ニコン フォトマスク、並びに露光方法及びその露光方法を用いた回路パターン素子製造方法、並びに露光装置
US5387484A (en) * 1992-07-07 1995-02-07 International Business Machines Corporation Two-sided mask for patterning of materials with electromagnetic radiation
JPH06161092A (ja) * 1992-11-17 1994-06-07 Nippon Steel Corp 露光用マスク

Also Published As

Publication number Publication date
JPH0722308A (ja) 1995-01-24
KR960011461B1 (ko) 1996-08-22
JPH081890B2 (ja) 1996-01-10
DE4422038C2 (de) 2002-11-14
US5571641A (en) 1996-11-05
TW239222B (ko) 1995-01-21
DE4422038A1 (de) 1995-02-02
US5698350A (en) 1997-12-16

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