KR900005553A - 반도체장치의 최소 접속창 형성방법 - Google Patents

반도체장치의 최소 접속창 형성방법 Download PDF

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Publication number
KR900005553A
KR900005553A KR1019880012029A KR880012029A KR900005553A KR 900005553 A KR900005553 A KR 900005553A KR 1019880012029 A KR1019880012029 A KR 1019880012029A KR 880012029 A KR880012029 A KR 880012029A KR 900005553 A KR900005553 A KR 900005553A
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KR
South Korea
Prior art keywords
connection window
semiconductor device
minimum
mask pattern
window
Prior art date
Application number
KR1019880012029A
Other languages
English (en)
Other versions
KR920004910B1 (ko
Inventor
박한수
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019880012029A priority Critical patent/KR920004910B1/ko
Priority to GB8911307A priority patent/GB2222893A/en
Priority to JP1124661A priority patent/JPH0291920A/ja
Priority to FR8906556A priority patent/FR2636775A1/fr
Priority to DE3916329A priority patent/DE3916329A1/de
Publication of KR900005553A publication Critical patent/KR900005553A/ko
Application granted granted Critical
Publication of KR920004910B1 publication Critical patent/KR920004910B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

내용 없음

Description

반도체장치의 최소 접속창 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도의 (A)도는 본 발명의 실시예에 따른 접속창의 평면도.
제4도의 (A)도는 본 발명의 다른 실시예에 따른 급속창의 평면도, (B)도는 (A)도의 II-II'선 단면도, (C)도는 (A)도의 I-I'선 단면도.

Claims (4)

  1. 반도체 제조공정중 사진공정에 있어서, 최소 접속창용 마스크 패턴을 직사각형으로 하여 접속창 형성시 해상력의 한계가 증가되는 것을 특징으로 하는 반도체장치의 최소 접속창 형성방법.
  2. 제1항에 있어서, 최소 접속창용 마스크 패턴을 열십자형으로 하는 것을 특징으로 하는 반도체장치의 최소 접속창 형성방법.
  3. 제1항에 있어서, 최소 접속창용 마스크 패턴의 좁은 폭은 해상력 한계치폭보다 작고 상기 최소 접속창용 마스크 패턴의 넓은 폭은 상기 해상력 한계치 폭보다 크게되는 것을 특징으로 하는 반도체장치의 최소 접속창 형성방법.
  4. 제3항에 있어서, 접속창용 마스크 패턴의 넓은 폭의 길이를 조절하여 접속창의 크기를 조절하는 것을 특징으로 하는 반도체장치의 최소 접속창 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880012029A 1988-09-16 1988-09-16 반도체 장치의 최소 접속창 형성방법 KR920004910B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019880012029A KR920004910B1 (ko) 1988-09-16 1988-09-16 반도체 장치의 최소 접속창 형성방법
GB8911307A GB2222893A (en) 1988-09-16 1989-05-17 A method of contact printing on a semiconductor
JP1124661A JPH0291920A (ja) 1988-09-16 1989-05-19 半導体装置の最小接続窓の形成方法
FR8906556A FR2636775A1 (fr) 1988-09-16 1989-05-19 Procede pour realiser le contact minimal sur un dispositif semiconducteur
DE3916329A DE3916329A1 (de) 1988-09-16 1989-05-19 Verfahren zur bildung des kleinstkontaktes bei halbleiter-vorrichtungen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880012029A KR920004910B1 (ko) 1988-09-16 1988-09-16 반도체 장치의 최소 접속창 형성방법

Publications (2)

Publication Number Publication Date
KR900005553A true KR900005553A (ko) 1990-04-14
KR920004910B1 KR920004910B1 (ko) 1992-06-22

Family

ID=19277820

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880012029A KR920004910B1 (ko) 1988-09-16 1988-09-16 반도체 장치의 최소 접속창 형성방법

Country Status (5)

Country Link
JP (1) JPH0291920A (ko)
KR (1) KR920004910B1 (ko)
DE (1) DE3916329A1 (ko)
FR (1) FR2636775A1 (ko)
GB (1) GB2222893A (ko)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2755399A1 (de) * 1976-12-14 1978-06-22 Ernst Prof Dipl Phys Froeschle Elektronenstrahlbelichtungsverfahren mit kompensation des proximityeffekts
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
EP0043863B1 (de) * 1980-07-10 1984-05-16 International Business Machines Corporation Verfahren zur Kompensation des Proximity Effekts bei Elektronenstrahl-Projektionsanlagen
JPS58102939A (ja) * 1981-12-15 1983-06-18 Canon Inc マスクアライナ−用マスク及びマスクアライナ−
JPS5948924A (ja) * 1982-09-14 1984-03-21 Nec Corp 電子線露光用位置合せマ−ク
JPS60210839A (ja) * 1984-03-05 1985-10-23 Fujitsu Ltd レチクルおよびその検査方法
JPS62198861A (ja) * 1986-02-27 1987-09-02 Hoya Corp レテイクル
JPS62264052A (ja) * 1986-05-10 1987-11-17 Sony Corp 露光用マスク

Also Published As

Publication number Publication date
DE3916329A1 (de) 1990-03-22
JPH0291920A (ja) 1990-03-30
FR2636775A1 (fr) 1990-03-23
GB2222893A (en) 1990-03-21
KR920004910B1 (ko) 1992-06-22
GB8911307D0 (en) 1989-07-05

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