DE69215942T2 - Verfahren und System zur optischen Projetkionsbelichtung - Google Patents

Verfahren und System zur optischen Projetkionsbelichtung

Info

Publication number
DE69215942T2
DE69215942T2 DE69215942T DE69215942T DE69215942T2 DE 69215942 T2 DE69215942 T2 DE 69215942T2 DE 69215942 T DE69215942 T DE 69215942T DE 69215942 T DE69215942 T DE 69215942T DE 69215942 T2 DE69215942 T2 DE 69215942T2
Authority
DE
Germany
Prior art keywords
projection exposure
optical projection
optical
exposure
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69215942T
Other languages
English (en)
Other versions
DE69215942D1 (de
Inventor
Seitaro Matsuo
Yoshinobu Takeuchi
Kazuhiko Komatsu
Emi Tamechika
Yoshiaki Mimura
Katsuhiro Harada
Toshiyuki Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27584872&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69215942(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP3142782A external-priority patent/JP2657936B2/ja
Priority claimed from JP3148133A external-priority patent/JP2673915B2/ja
Priority claimed from JP3157401A external-priority patent/JP2666161B2/ja
Priority claimed from JP17781691A external-priority patent/JP2694707B2/ja
Priority claimed from JP19745791A external-priority patent/JP2630694B2/ja
Priority claimed from JP3218099A external-priority patent/JPH0541346A/ja
Priority claimed from JP3218100A external-priority patent/JP2613826B2/ja
Priority claimed from JP3218098A external-priority patent/JPH0541342A/ja
Priority claimed from JP3225335A external-priority patent/JP2666162B2/ja
Priority claimed from JP3235753A external-priority patent/JPH0555110A/ja
Priority claimed from JP3254306A external-priority patent/JP2807936B2/ja
Priority claimed from JP3290442A external-priority patent/JP3021134B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69215942D1 publication Critical patent/DE69215942D1/de
Application granted granted Critical
Publication of DE69215942T2 publication Critical patent/DE69215942T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/53—Automatic registration or positioning of originals with respect to each other or the photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69215942T 1991-04-05 1992-03-24 Verfahren und System zur optischen Projetkionsbelichtung Revoked DE69215942T2 (de)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
JP9982291 1991-04-05
JP13531791 1991-05-13
JP3142782A JP2657936B2 (ja) 1991-05-20 1991-05-20 マスク照明光学系及びそれを用いる投影露光装置並びに方法
JP3148133A JP2673915B2 (ja) 1991-05-24 1991-05-24 微細パタン投影露光装置
JP3157401A JP2666161B2 (ja) 1991-04-05 1991-06-03 微細パタン投影露光方法
JP17781691A JP2694707B2 (ja) 1991-06-24 1991-06-24 投影露光方法及び投影露光装置
JP19745791A JP2630694B2 (ja) 1991-07-12 1991-07-12 投影露光装置用マスク
JP3218099A JPH0541346A (ja) 1991-08-05 1991-08-05 微細パタン投影露光装置
JP3218098A JPH0541342A (ja) 1991-08-05 1991-08-05 微細パタン投影露光装置
JP3218100A JP2613826B2 (ja) 1991-08-05 1991-08-05 投影露光装置
JP3225335A JP2666162B2 (ja) 1991-08-12 1991-08-12 微細パタン投影露光装置
JP3235753A JPH0555110A (ja) 1991-08-23 1991-08-23 微細パタン投影露光方法および装置
JP3254306A JP2807936B2 (ja) 1991-09-06 1991-09-06 微細パタン投影露光装置
JP3290442A JP3021134B2 (ja) 1991-10-11 1991-10-11 微細パタン投影露光装置

Publications (2)

Publication Number Publication Date
DE69215942D1 DE69215942D1 (de) 1997-01-30
DE69215942T2 true DE69215942T2 (de) 1997-07-24

Family

ID=27584872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215942T Revoked DE69215942T2 (de) 1991-04-05 1992-03-24 Verfahren und System zur optischen Projetkionsbelichtung

Country Status (4)

Country Link
US (1) US5208629A (de)
EP (1) EP0507487B1 (de)
KR (1) KR970004682B1 (de)
DE (1) DE69215942T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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US5638211A (en) 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
US6885433B2 (en) * 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US5719704A (en) 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6967710B2 (en) 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
US6710855B2 (en) * 1990-11-15 2004-03-23 Nikon Corporation Projection exposure apparatus and method
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
JPH0567558A (ja) * 1991-09-06 1993-03-19 Nikon Corp 露光方法
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
US5530518A (en) * 1991-12-25 1996-06-25 Nikon Corporation Projection exposure apparatus
USRE39662E1 (en) * 1991-12-25 2007-05-29 Nikon Corporation Projection exposure apparatus
US5703675A (en) * 1992-01-17 1997-12-30 Nikon Corporation Projection-exposing apparatus with deflecting grating member
JP3194155B2 (ja) * 1992-01-31 2001-07-30 キヤノン株式会社 半導体デバイスの製造方法及びそれを用いた投影露光装置
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
US5274420A (en) * 1992-04-20 1993-12-28 International Business Machines Corporation Beamsplitter type lens elements with pupil-plane stops for lithographic systems
KR970003593B1 (en) * 1992-09-03 1997-03-20 Samsung Electronics Co Ltd Projection exposure method and device using mask
JPH06333803A (ja) * 1992-09-18 1994-12-02 Sharp Corp 投影型露光装置用フィルター
US6017681A (en) * 1992-11-09 2000-01-25 Fujitsu Limited Method of coupling optical parts and method of forming a mirror
JP3064769B2 (ja) * 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
US5320918A (en) * 1992-12-31 1994-06-14 At&T Bell Laboratories Optical lithographical imaging system including optical transmission diffraction devices
US5486896A (en) * 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
WO1994019723A1 (en) * 1993-02-23 1994-09-01 Interuniversitair Micro-Elektronica Resolution-enhancing optical phase structure for a projection illumination system
US5552856A (en) * 1993-06-14 1996-09-03 Nikon Corporation Projection exposure apparatus
KR960011461B1 (ko) * 1993-06-25 1996-08-22 현대전자산업 주식회사 회절빛 제어 마스크
JP3291849B2 (ja) * 1993-07-15 2002-06-17 株式会社ニコン 露光方法、デバイス形成方法、及び露光装置
JPH0757993A (ja) * 1993-08-13 1995-03-03 Nikon Corp 投影露光装置
JP2590700B2 (ja) * 1993-09-16 1997-03-12 日本電気株式会社 投影露光装置
EP0658810B1 (de) * 1993-12-13 1998-11-25 Carl Zeiss Beleuchtungseinrichtung für ein optisches System mit einem Reticle-Maskierungssystem
EP0687956B2 (de) 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
US6426131B1 (en) * 1998-08-24 2002-07-30 Lsi Logic Corporation Off-axis pupil aperture and method for making the same
JP3264368B2 (ja) * 1998-10-16 2002-03-11 日本電気株式会社 縮小投影型露光装置の調整方法
JP3267272B2 (ja) * 1999-01-26 2002-03-18 日本電気株式会社 投影光学系の収差量の測定方法
JP2002231619A (ja) * 2000-11-29 2002-08-16 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
US6563566B2 (en) 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP3615181B2 (ja) * 2001-11-06 2005-01-26 株式会社東芝 露光装置の検査方法、焦点位置を補正する露光方法、および半導体装置の製造方法
US20040161709A1 (en) * 2003-02-10 2004-08-19 Schroeder Joseph F. Laser-written optical structures within calcium fluoride and other crystal materials
JP2005077966A (ja) * 2003-09-03 2005-03-24 Dainippon Printing Co Ltd 回折光学素子
DE102004058044B4 (de) * 2004-12-01 2014-02-06 Friedrich-Schiller-Universität Jena Ortsfrequenzfiltervorrichtung und Verfahren zur Ortsfrequenzfilterung von Laserstrahlen
ATE400062T1 (de) * 2005-06-30 2008-07-15 Suisse Electronique Microtech Farbbildaufnahmesensor
US20070260720A1 (en) * 2006-05-03 2007-11-08 Morain Gary E Mobility domain
US8054449B2 (en) 2006-11-22 2011-11-08 Asml Holding N.V. Enhancing the image contrast of a high resolution exposure tool
CN107247389A (zh) * 2017-07-06 2017-10-13 武汉华星光电技术有限公司 曝光方法和聚光透镜以及曝光机

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* Cited by examiner, † Cited by third party
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JPS5942517A (ja) * 1982-09-02 1984-03-09 Nippon Kogaku Kk <Nikon> 二重焦点光学系
JPH0682598B2 (ja) * 1984-10-11 1994-10-19 日本電信電話株式会社 投影露光装置
JPH0666241B2 (ja) * 1985-10-14 1994-08-24 株式会社日立製作所 位置検出方法
US5026145A (en) * 1987-09-24 1991-06-25 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure apparatus
US5121160A (en) * 1989-03-09 1992-06-09 Canon Kabushiki Kaisha Exposure method and apparatus
US5117255A (en) * 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner

Also Published As

Publication number Publication date
EP0507487A2 (de) 1992-10-07
EP0507487A3 (en) 1993-10-27
US5208629A (en) 1993-05-04
KR970004682B1 (ko) 1997-04-02
KR920020229A (ko) 1992-11-20
DE69215942D1 (de) 1997-01-30
EP0507487B1 (de) 1996-12-18

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation