KR910001875A - 노광용 마스크의 제조방법 - Google Patents

노광용 마스크의 제조방법 Download PDF

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Publication number
KR910001875A
KR910001875A KR1019900008645A KR900008645A KR910001875A KR 910001875 A KR910001875 A KR 910001875A KR 1019900008645 A KR1019900008645 A KR 1019900008645A KR 900008645 A KR900008645 A KR 900008645A KR 910001875 A KR910001875 A KR 910001875A
Authority
KR
South Korea
Prior art keywords
mask
manufacturing
exposure
exposure mask
mask film
Prior art date
Application number
KR1019900008645A
Other languages
English (en)
Other versions
KR0160963B1 (ko
Inventor
히로이찌 가와히라
다께히꼬 군지
사또루 노자와
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR910001875A publication Critical patent/KR910001875A/ko
Application granted granted Critical
Publication of KR0160963B1 publication Critical patent/KR0160963B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Abstract

내용 없음

Description

노광용 마스크의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 노광용 마스크의 제조방법에 사용하는 전자 비임 노광장치의 개략적인 구성도,
제2도 (A), (B)는 배경 기술을 도시하는 바의 노광용 마스크(레티클)의 평면도로써, 제2도 (A)는 포지타입이고, 제2도 (B)는 제거타입인 도면,
제3도는 문제점을 도시하는 노광용 마스크의 단면도.

Claims (1)

  1. 투명 기판에 마스크막을 형성하여, 이 마스크막에 대해서 노광 및 선택적 에칭 처리를 실시하므로서 마스크막으로 형성되는 마스크 패턴을 형성하는 노광용 마스크의 제조방법에 있어서, 마스크 패턴 형성을 위한 노광시에, 엣칭후에 남는 마스크막의 투명 기판에 점유하는 면적의 비율에 따라 다른 보정량으로 마스크 패턴 위치의 보정을 하는 것을 특징으로 하는 노광용 마스크의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900008645A 1989-06-13 1990-06-13 노광용 마스크의 제조방법 KR0160963B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP150289 1989-06-13
JP15028989A JP2794793B2 (ja) 1989-06-13 1989-06-13 露光用マスクの製造方法

Publications (2)

Publication Number Publication Date
KR910001875A true KR910001875A (ko) 1991-01-31
KR0160963B1 KR0160963B1 (ko) 1999-02-01

Family

ID=15493730

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008645A KR0160963B1 (ko) 1989-06-13 1990-06-13 노광용 마스크의 제조방법

Country Status (5)

Country Link
US (1) US5202204A (ko)
EP (1) EP0403220B1 (ko)
JP (1) JP2794793B2 (ko)
KR (1) KR0160963B1 (ko)
DE (1) DE69012441T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970006927B1 (ko) * 1992-11-10 1997-04-30 다이 니뽄 인사쯔 가부시키가이샤 위상시프트 포토마스크 및 그 제조방법
JP3068398B2 (ja) * 1993-11-15 2000-07-24 日本電気株式会社 レチクルの製造方法およびその製造装置
JPH0915833A (ja) * 1995-06-30 1997-01-17 Sony Corp 露光用マスク作製装置における走査用データ作成装置及び走査用データの作成方法
JP4853685B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク又はその製造中間体の検査方法及び良否判定方法
CN106997146B (zh) * 2017-04-17 2021-01-26 京东方科技集团股份有限公司 一种掩膜板的制作方法、制作系统及掩膜板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2066487B (en) * 1979-12-18 1983-11-23 Philips Electronic Associated Alignment of exposure masks
DE3485291D1 (de) * 1983-03-29 1992-01-09 Toshiba Kawasaki Kk Verfahren fuer die herstellung mittels projektion einer integrierten schaltungsabbildung auf einer halbleiterplatte.
US4887283A (en) * 1988-09-27 1989-12-12 Mitsubishi Denki Kabushiki Kaisha X-ray mask and exposure method employing the same
JPH0779075B2 (ja) * 1990-02-21 1995-08-23 株式会社東芝 電子ビーム露光装置

Also Published As

Publication number Publication date
JP2794793B2 (ja) 1998-09-10
EP0403220B1 (en) 1994-09-14
DE69012441T2 (de) 1995-01-26
US5202204A (en) 1993-04-13
EP0403220A1 (en) 1990-12-19
JPH0315065A (ja) 1991-01-23
DE69012441D1 (de) 1994-10-20
KR0160963B1 (ko) 1999-02-01

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