KR900007055A - 이미지 리버스 포토레지스트를 이용한 2중포토처리방법 - Google Patents

이미지 리버스 포토레지스트를 이용한 2중포토처리방법 Download PDF

Info

Publication number
KR900007055A
KR900007055A KR1019880014041A KR880014041A KR900007055A KR 900007055 A KR900007055 A KR 900007055A KR 1019880014041 A KR1019880014041 A KR 1019880014041A KR 880014041 A KR880014041 A KR 880014041A KR 900007055 A KR900007055 A KR 900007055A
Authority
KR
South Korea
Prior art keywords
processing method
photo processing
image reverse
photoresist
dual photo
Prior art date
Application number
KR1019880014041A
Other languages
English (en)
Other versions
KR970007433B1 (en
Inventor
박근원
김홍석
승성표
Original Assignee
이만용
금성반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이만용, 금성반도체 주식회사 filed Critical 이만용
Priority to KR88014041A priority Critical patent/KR970007433B1/ko
Publication of KR900007055A publication Critical patent/KR900007055A/ko
Application granted granted Critical
Publication of KR970007433B1 publication Critical patent/KR970007433B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음

Description

이미지 리버스 포토레지스트를 이용한 2중포토처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부된 도면의 (가) 내지 (라)는 본 발명 이미지 리버스 포토레지스트를 이용한 2중포토처리에 대한 공정도.

Claims (1)

  1. 웨이퍼(1)위에 포토레지스트(2), 마스크(3)를 증착한 후 노광에너지를 투사하여 첫번째 포토레지스트패턴(4)을 형성하고, 다시 포토레지스트(6), 마스크(5)를 증착한 후 노광에너지를 투사하여 두번째 포토레지스트패턴(7)을 형성하는 공정으로 수행하여 된 것을 특징으로 한 이미지 리버스 포토레지스트를 이용한 2중포토처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR88014041A 1988-10-27 1988-10-27 Double photo treating process using image reverse photoresist KR970007433B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR88014041A KR970007433B1 (en) 1988-10-27 1988-10-27 Double photo treating process using image reverse photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR88014041A KR970007433B1 (en) 1988-10-27 1988-10-27 Double photo treating process using image reverse photoresist

Publications (2)

Publication Number Publication Date
KR900007055A true KR900007055A (ko) 1990-05-09
KR970007433B1 KR970007433B1 (en) 1997-05-08

Family

ID=19278812

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88014041A KR970007433B1 (en) 1988-10-27 1988-10-27 Double photo treating process using image reverse photoresist

Country Status (1)

Country Link
KR (1) KR970007433B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573027B1 (en) 1999-02-05 2003-06-03 Nec Corporation Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573027B1 (en) 1999-02-05 2003-06-03 Nec Corporation Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR970007433B1 (en) 1997-05-08

Similar Documents

Publication Publication Date Title
KR980003805A (ko) 위상 시프트 마스크를 사용한 패턴의 형성 방법
ES8708067A1 (es) Procedimiento para la formacion d un revestimiento de fotopolimero con diseno sobre un rodillo de impresion y rodillo de impresion provisto de este revestimiento fotopolimero
JPS5339075A (en) Step and repeat exposure method of masks
KR900007055A (ko) 이미지 리버스 포토레지스트를 이용한 2중포토처리방법
KR937000886A (ko) 미세 레지스트 패턴의 형성 방법
JPS5699623A (en) Preparation of embossed sheet
JPS5580323A (en) Pattern forming method for photoresist-film
JPS52149978A (en) Developing treatment method of photoresist film
KR910001875A (ko) 노광용 마스크의 제조방법
EP0327883A3 (en) Single coating positive or negative working color proofing system
JPS54141573A (en) Mask for exposure
JPS5373073A (en) Treatment method for photo resist
JPS56137632A (en) Pattern forming
JPS51114931A (en) Photoresist pattern formation method
JPS52143769A (en) Removing method of positive type photo resist
JPS5347825A (en) Photoresist exposure
KR970016794A (ko) 하프톤 위상 반전 마스크의 제조 방법
JPS5360626A (en) Method for eliminating illumination irregularity
KR910005101A (ko) 레지스트패턴 형성방법
JPS5283064A (en) Regist film forming method
KR910001460A (ko) 포토레지스트의 측벽 프로파일 개선 방법
JPS5255381A (en) Photo exposure method
JPS5217825A (en) Method of illuminating image in electrostatic printing
JPS533821A (en) Exposure method
JPS55138835A (en) Method of forming photoresist pattern

Legal Events

Date Code Title Description
N231 Notification of change of applicant
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100726

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee