JPS55165629A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55165629A
JPS55165629A JP7339679A JP7339679A JPS55165629A JP S55165629 A JPS55165629 A JP S55165629A JP 7339679 A JP7339679 A JP 7339679A JP 7339679 A JP7339679 A JP 7339679A JP S55165629 A JPS55165629 A JP S55165629A
Authority
JP
Japan
Prior art keywords
pattern
patterns
photomask
gate
copied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7339679A
Other languages
Japanese (ja)
Inventor
Kazuhiko Tsuji
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7339679A priority Critical patent/JPS55165629A/en
Publication of JPS55165629A publication Critical patent/JPS55165629A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To make the IC density high, by copying specified types of pattern to the specified locations of a semiconductor substrate by using a mask having two or more chip patterns, and by decreasing the sheets of photomasks. CONSTITUTION:A photomask 5 has patterns for channels A, gates B, connecting points C, and wiring D. At first the pattern A is exposed and developed by using the photomask 5 and a screening plate 6, and the channel pattern A is formed on a substrate 7. Then, after a gate material has been formed, the pattern A and the gate pattern B are aligned. Then, the gate pattern B is copied by the same method. The patterns C and D are likewise copied. In this method, since the number of the mask replacements is decreased and the positions of the patterns are not moved, the allowance for alignment area can be reduced and IC density can be made high.
JP7339679A 1979-06-11 1979-06-11 Manufacture of semiconductor device Pending JPS55165629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7339679A JPS55165629A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7339679A JPS55165629A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55165629A true JPS55165629A (en) 1980-12-24

Family

ID=13516989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7339679A Pending JPS55165629A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165629A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181490U (en) * 1981-05-11 1982-11-17
JPS57211233A (en) * 1981-06-22 1982-12-25 Mitsubishi Electric Corp Test of mask
JPS58137839A (en) * 1982-02-12 1983-08-16 Toshiba Corp Production of mask for semiconductor
JPS5998445U (en) * 1982-12-21 1984-07-03 日本電気株式会社 photomask
JPS601829A (en) * 1983-06-20 1985-01-08 Nec Corp Reduction projection type exposure device
JPS61226924A (en) * 1985-04-01 1986-10-08 Canon Inc Exposing device
JPS6243125A (en) * 1985-08-21 1987-02-25 Canon Inc Pattern printing machine
JPS62104440U (en) * 1985-09-06 1987-07-03
JPS62224930A (en) * 1986-03-27 1987-10-02 Hoya Corp Reduction stepper
JPS6323319A (en) * 1987-04-13 1988-01-30 Canon Inc Methofd for projection exposure
JPS6370418A (en) * 1986-09-11 1988-03-30 Canon Inc Semiconductor exposure device
US6421111B1 (en) 1997-08-19 2002-07-16 Micron Technology, Inc. Multiple image reticle for forming layers
JP2010067682A (en) * 2008-09-09 2010-03-25 Casio Comput Co Ltd Method of manufacturing semiconductor apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181490U (en) * 1981-05-11 1982-11-17
JPH0120076Y2 (en) * 1981-05-11 1989-06-12
JPS57211233A (en) * 1981-06-22 1982-12-25 Mitsubishi Electric Corp Test of mask
JPS6239814B2 (en) * 1981-06-22 1987-08-25 Mitsubishi Electric Corp
JPS58137839A (en) * 1982-02-12 1983-08-16 Toshiba Corp Production of mask for semiconductor
JPS5998445U (en) * 1982-12-21 1984-07-03 日本電気株式会社 photomask
JPS601829A (en) * 1983-06-20 1985-01-08 Nec Corp Reduction projection type exposure device
JPS6352451B2 (en) * 1983-06-20 1988-10-19 Nippon Electric Co
JPS61226924A (en) * 1985-04-01 1986-10-08 Canon Inc Exposing device
JPS6243125A (en) * 1985-08-21 1987-02-25 Canon Inc Pattern printing machine
JPS62104440U (en) * 1985-09-06 1987-07-03
JPH0322904Y2 (en) * 1985-09-06 1991-05-20
JPS62224930A (en) * 1986-03-27 1987-10-02 Hoya Corp Reduction stepper
JPS6370418A (en) * 1986-09-11 1988-03-30 Canon Inc Semiconductor exposure device
JPS6323319A (en) * 1987-04-13 1988-01-30 Canon Inc Methofd for projection exposure
US6421111B1 (en) 1997-08-19 2002-07-16 Micron Technology, Inc. Multiple image reticle for forming layers
US6563568B2 (en) 1997-08-19 2003-05-13 Micron Technology, Inc. Multiple image reticle for forming layers
US6646722B2 (en) 1997-08-19 2003-11-11 Micron Technology, Inc. Multiple image reticle for forming layers
JP2010067682A (en) * 2008-09-09 2010-03-25 Casio Comput Co Ltd Method of manufacturing semiconductor apparatus
JP4645863B2 (en) * 2008-09-09 2011-03-09 カシオ計算機株式会社 Manufacturing method of semiconductor device

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