KR950030292A - 노광기 해상도 측정용 포토마스크 - Google Patents

노광기 해상도 측정용 포토마스크 Download PDF

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Publication number
KR950030292A
KR950030292A KR1019940006952A KR19940006952A KR950030292A KR 950030292 A KR950030292 A KR 950030292A KR 1019940006952 A KR1019940006952 A KR 1019940006952A KR 19940006952 A KR19940006952 A KR 19940006952A KR 950030292 A KR950030292 A KR 950030292A
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KR
South Korea
Prior art keywords
photomask
patterns
measuring
resolution
exposure
Prior art date
Application number
KR1019940006952A
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English (en)
Other versions
KR0144083B1 (ko
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940006952A priority Critical patent/KR0144083B1/ko
Priority to DE19512245A priority patent/DE19512245C2/de
Priority to CN95104509A priority patent/CN1086811C/zh
Priority to US08/415,608 priority patent/US5578401A/en
Publication of KR950030292A publication Critical patent/KR950030292A/ko
Application granted granted Critical
Publication of KR0144083B1 publication Critical patent/KR0144083B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Multimedia (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 노광기 해상도를 정확히 측정하는 포토마스크에 있어서, 서로 대칭되는 2개의 패턴(5)을 형성되, 두패턴(5) 사이는 다수의 간격이 형성되어 순차적으로 증가하거나 감소되어 지는 것을 특징으로 하는 노광기 해상도 측정용 포토마스크에 관한 것으로, 노광기 해상도를 신속·정확하게 측정할 수 있으므로 반도체소자의 제조에 있어서 수율증가 및 정확한 회로를 구현할 수 있는 노광기 해상도 측정용 포토마스크에 관한 것이다.

Description

노광기 해상도 측정용 포토마스크
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 노광기의 해상도 측정용 패턴의 구조도.

Claims (3)

  1. 노광기 해상도를 정확히 측정하는 포토마스크에 있어서, 서로 대칭되는 2개의 패턴(5)을 형성하되, 두패턴(5) 사이는 다수의 간격이 형성되어 순차적으로 증가하거나 감소되어 지는 것을 특징으로 하는 노광기 해상도 측정용 포토마스크.
  2. 제1항에 있어서, 상기 두패턴(5) 사이의 간격은 일정한 폭을 갖는 것을 특징으로 하는 노광기 해상도 측정용 포토마스크.
  3. 제2항에 있어서, 상기 두패턴(5) 사이의 동일간격은 일정한 폭은 5㎛ 내지 15㎛ 중 어느 하나로 이루어지는 것을 특징으로 하는 노광기 해상도 측정용 포토마스크.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940006952A 1994-04-01 1994-04-01 노광기 해상도 측정용 포토마스크 KR0144083B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940006952A KR0144083B1 (ko) 1994-04-01 1994-04-01 노광기 해상도 측정용 포토마스크
DE19512245A DE19512245C2 (de) 1994-04-01 1995-03-31 Photomaske zum Messen der Auflösung von Belichtungseinrichtungen
CN95104509A CN1086811C (zh) 1994-04-01 1995-04-01 测量曝光装置分辨率用的光掩模
US08/415,608 US5578401A (en) 1994-04-01 1995-04-03 Photomask for the measurement of resolution of exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940006952A KR0144083B1 (ko) 1994-04-01 1994-04-01 노광기 해상도 측정용 포토마스크

Publications (2)

Publication Number Publication Date
KR950030292A true KR950030292A (ko) 1995-11-24
KR0144083B1 KR0144083B1 (ko) 1998-08-17

Family

ID=19380350

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940006952A KR0144083B1 (ko) 1994-04-01 1994-04-01 노광기 해상도 측정용 포토마스크

Country Status (1)

Country Link
KR (1) KR0144083B1 (ko)

Also Published As

Publication number Publication date
KR0144083B1 (ko) 1998-08-17

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