KR920005329A - 반도체소자용 패턴의 형성 또는 시험방법 - Google Patents

반도체소자용 패턴의 형성 또는 시험방법 Download PDF

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Publication number
KR920005329A
KR920005329A KR1019910013468A KR910013468A KR920005329A KR 920005329 A KR920005329 A KR 920005329A KR 1019910013468 A KR1019910013468 A KR 1019910013468A KR 910013468 A KR910013468 A KR 910013468A KR 920005329 A KR920005329 A KR 920005329A
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KR
South Korea
Prior art keywords
pattern
formation
test method
semiconductor device
temperature
Prior art date
Application number
KR1019910013468A
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English (en)
Other versions
KR960015517B1 (ko
Inventor
도모타카 히가키
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920005329A publication Critical patent/KR920005329A/ko
Application granted granted Critical
Publication of KR960015517B1 publication Critical patent/KR960015517B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

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  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음

Description

반도체소자용 패턴의 형성 또는 시험방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명방법이 적용되는 전자비임묘화장치의 개략을 나타낸 단면도
제2도는 본 발명방법이 적용되는 패턴위치정밀도검사장치의 주요부를 명확히
하는 단면도이다.

Claims (1)

  1. 반도체기판 또는 유리마스크(4)의 기판온도나 온도분포를 측정하여 일정한 온도나 온도분포에 이른 것을
    검지한 후에 노광공정 또는 검사 공정을 실시하는 것을 특징으로 하는 반도체소자용 패턴의 형성 또는 시험방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910013468A 1990-08-14 1991-08-03 반도체소자용 패턴의 형성 또는 시험방법 KR960015517B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-214603 1990-08-14
JP02-214603 1990-08-14
JP2214603A JP2907971B2 (ja) 1990-08-14 1990-08-14 半導体素子用パターンの形成または試験方法

Publications (2)

Publication Number Publication Date
KR920005329A true KR920005329A (ko) 1992-03-28
KR960015517B1 KR960015517B1 (ko) 1996-11-15

Family

ID=16658449

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013468A KR960015517B1 (ko) 1990-08-14 1991-08-03 반도체소자용 패턴의 형성 또는 시험방법

Country Status (3)

Country Link
US (1) US5217834A (ko)
JP (1) JP2907971B2 (ko)
KR (1) KR960015517B1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188184A (ja) * 1992-12-21 1994-07-08 Nec Corp レジスト膜の加熱方法およびパターン形成方法
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP2910716B2 (ja) * 1997-01-16 1999-06-23 日本電気株式会社 光強度計算のパラメトリック解析方法
US6100486A (en) 1998-08-13 2000-08-08 Micron Technology, Inc. Method for sorting integrated circuit devices
US5927512A (en) 1997-01-17 1999-07-27 Micron Technology, Inc. Method for sorting integrated circuit devices
US5844803A (en) * 1997-02-17 1998-12-01 Micron Technology, Inc. Method of sorting a group of integrated circuit devices for those devices requiring special testing
US5915231A (en) 1997-02-26 1999-06-22 Micron Technology, Inc. Method in an integrated circuit (IC) manufacturing process for identifying and redirecting IC's mis-processed during their manufacture
US5856923A (en) * 1997-03-24 1999-01-05 Micron Technology, Inc. Method for continuous, non lot-based integrated circuit manufacturing
JP2967755B2 (ja) * 1997-04-17 1999-10-25 日本電気株式会社 半導体装置の製造方法
US7120513B1 (en) 1997-06-06 2006-10-10 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs
US5907492A (en) * 1997-06-06 1999-05-25 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs
US6049624A (en) 1998-02-20 2000-04-11 Micron Technology, Inc. Non-lot based method for assembling integrated circuit devices
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP5138968B2 (ja) * 2007-04-11 2013-02-06 株式会社ニッケ機械製作所 良否判定装置
JP5356114B2 (ja) 2009-05-29 2013-12-04 株式会社東芝 露光用マスク及び半導体装置の製造方法
JP2011119483A (ja) * 2009-12-03 2011-06-16 Canon Inc 露光装置およびデバイス製造方法
JP2011129673A (ja) * 2009-12-17 2011-06-30 Nuflare Technology Inc 荷電粒子ビーム描画装置及び基板配置室の温度調整方法
JP5674453B2 (ja) * 2010-12-24 2015-02-25 株式会社ニッケ機械製作所 計測装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998639A (en) * 1974-11-19 1976-12-21 Bell Telephone Laboratories, Incorporated Methods for determining feature-size accuracy of circuit patterns
US4864356A (en) * 1987-04-21 1989-09-05 Brother Kogyo Kabushiki Kaisha Exposure device for image recording apparatus
JPH0274027A (ja) * 1988-09-09 1990-03-14 Jeol Ltd パターン描画方法
JPH0276212A (ja) * 1988-09-13 1990-03-15 Canon Inc 多重露光方法
JPH02134811A (ja) * 1988-11-15 1990-05-23 Nec Corp パターン露光装置
US5044750A (en) * 1990-08-13 1991-09-03 National Semiconductor Corporation Method for checking lithography critical dimensions

Also Published As

Publication number Publication date
JP2907971B2 (ja) 1999-06-21
US5217834A (en) 1993-06-08
JPH0496314A (ja) 1992-03-27
KR960015517B1 (ko) 1996-11-15

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