KR950030224A - 레티클 및 그레티클을 사용한 가림막 세팅방법 - Google Patents
레티클 및 그레티클을 사용한 가림막 세팅방법 Download PDFInfo
- Publication number
- KR950030224A KR950030224A KR1019940006957A KR19940006957A KR950030224A KR 950030224 A KR950030224 A KR 950030224A KR 1019940006957 A KR1019940006957 A KR 1019940006957A KR 19940006957 A KR19940006957 A KR 19940006957A KR 950030224 A KR950030224 A KR 950030224A
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- screen setting
- setting
- measuring
- graticles
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
가리막(blind) 세팅 정확도를 용이하게 측정하는 가림막 세팅 측정용 레티클(reticle)에 있어서, 정방형 패턴(21, 22, 23)을 다수 형성하되 동일한 중심 및 일정한 선폭을 가지도록 형성시키는 것을 특징으로 하는 가림막 세팅 측정용 레티클에 관한 것으로, 종래의 가림막 세팅 측정용 패턴의 버니어(3)를 일일이 측정할 필요없이, 웨이퍼 상에 형성된 패턴모양(5, 21', 22')만으로 가림막 세팅 측정을 용이하되 정확하게 측정할 수 있는 효과가 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일실시예에 따른 가림막 세팅 측정용 레티클 평면도, 제3A도 내지 제3C도는 본 발명의 일실시예에 따른 가림막 세팅 측정용 레티클의 사용예를 도시한 평면도.
Claims (1)
- 가림막(blind) 세팅 정확도를 용이하게 측정하는 가림막 세팅 측정용 레티클(reticle)에 있어서, 정방형패턴(21, 22, 23)을 다수 형성하되 동일한 중심 및 일정한 선폭을 가지도록 형성시키는 것을 특징으로 하는 가림막 세팅 측정용 레티클.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940006957A KR0144082B1 (ko) | 1994-04-01 | 1994-04-01 | 레티클 및 그 레티클을 사용한 가림막 세팅 방법 |
GB9506741A GB2288467B (en) | 1994-04-01 | 1995-03-31 | A method for use in manufacturing a semiconductor device and a device made by the method |
CN95104594A CN1080895C (zh) | 1994-04-01 | 1995-04-01 | 一种掩模原版及用其测量挡板设定精度的方法 |
US08/415,720 US5616438A (en) | 1994-04-01 | 1995-04-03 | Reticle and a method for measuring blind setting accuracy using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940006957A KR0144082B1 (ko) | 1994-04-01 | 1994-04-01 | 레티클 및 그 레티클을 사용한 가림막 세팅 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950030224A true KR950030224A (ko) | 1995-11-24 |
KR0144082B1 KR0144082B1 (ko) | 1998-08-17 |
Family
ID=19380351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940006957A KR0144082B1 (ko) | 1994-04-01 | 1994-04-01 | 레티클 및 그 레티클을 사용한 가림막 세팅 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5616438A (ko) |
KR (1) | KR0144082B1 (ko) |
CN (1) | CN1080895C (ko) |
GB (1) | GB2288467B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09166416A (ja) * | 1995-12-13 | 1997-06-24 | Mitsubishi Electric Corp | レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置 |
US8802359B2 (en) | 2011-11-29 | 2014-08-12 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | UV glass production method |
CN102520590B (zh) * | 2011-11-29 | 2015-05-20 | 深圳市华星光电技术有限公司 | 一种遮光板的制作方法 |
US9029855B2 (en) * | 2013-03-15 | 2015-05-12 | Globalfoundries Singapore Pte. Ltd. | Layout for reticle and wafer scanning electron microscope registration or overlay measurements |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4193687A (en) * | 1978-06-05 | 1980-03-18 | Rockwell International Corporation | High resolution alignment technique and apparatus |
IL59629A (en) * | 1979-05-11 | 1983-03-31 | Electromask Inc | Apparatus and process for photoexposing semiconductor wafers |
JPH05217834A (ja) * | 1992-01-31 | 1993-08-27 | Sharp Corp | マスク上のlsiチップレイアウト方法 |
US5444538A (en) * | 1994-03-10 | 1995-08-22 | New Vision Systems, Inc. | System and method for optimizing the grid and intrafield registration of wafer patterns |
-
1994
- 1994-04-01 KR KR1019940006957A patent/KR0144082B1/ko not_active IP Right Cessation
-
1995
- 1995-03-31 GB GB9506741A patent/GB2288467B/en not_active Expired - Fee Related
- 1995-04-01 CN CN95104594A patent/CN1080895C/zh not_active Expired - Fee Related
- 1995-04-03 US US08/415,720 patent/US5616438A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0144082B1 (ko) | 1998-08-17 |
GB2288467A (en) | 1995-10-18 |
GB9506741D0 (en) | 1995-05-24 |
CN1115415A (zh) | 1996-01-24 |
GB2288467B (en) | 1997-11-19 |
CN1080895C (zh) | 2002-03-13 |
US5616438A (en) | 1997-04-01 |
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Payment date: 20120323 Year of fee payment: 15 |
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