KR950030224A - 레티클 및 그레티클을 사용한 가림막 세팅방법 - Google Patents

레티클 및 그레티클을 사용한 가림막 세팅방법 Download PDF

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Publication number
KR950030224A
KR950030224A KR1019940006957A KR19940006957A KR950030224A KR 950030224 A KR950030224 A KR 950030224A KR 1019940006957 A KR1019940006957 A KR 1019940006957A KR 19940006957 A KR19940006957 A KR 19940006957A KR 950030224 A KR950030224 A KR 950030224A
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KR
South Korea
Prior art keywords
reticle
screen setting
setting
measuring
graticles
Prior art date
Application number
KR1019940006957A
Other languages
English (en)
Other versions
KR0144082B1 (ko
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940006957A priority Critical patent/KR0144082B1/ko
Priority to GB9506741A priority patent/GB2288467B/en
Priority to CN95104594A priority patent/CN1080895C/zh
Priority to US08/415,720 priority patent/US5616438A/en
Publication of KR950030224A publication Critical patent/KR950030224A/ko
Application granted granted Critical
Publication of KR0144082B1 publication Critical patent/KR0144082B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

가리막(blind) 세팅 정확도를 용이하게 측정하는 가림막 세팅 측정용 레티클(reticle)에 있어서, 정방형 패턴(21, 22, 23)을 다수 형성하되 동일한 중심 및 일정한 선폭을 가지도록 형성시키는 것을 특징으로 하는 가림막 세팅 측정용 레티클에 관한 것으로, 종래의 가림막 세팅 측정용 패턴의 버니어(3)를 일일이 측정할 필요없이, 웨이퍼 상에 형성된 패턴모양(5, 21', 22')만으로 가림막 세팅 측정을 용이하되 정확하게 측정할 수 있는 효과가 있다.

Description

레티클 및 그레티클을 사용한 가림막 세팅방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일실시예에 따른 가림막 세팅 측정용 레티클 평면도, 제3A도 내지 제3C도는 본 발명의 일실시예에 따른 가림막 세팅 측정용 레티클의 사용예를 도시한 평면도.

Claims (1)

  1. 가림막(blind) 세팅 정확도를 용이하게 측정하는 가림막 세팅 측정용 레티클(reticle)에 있어서, 정방형패턴(21, 22, 23)을 다수 형성하되 동일한 중심 및 일정한 선폭을 가지도록 형성시키는 것을 특징으로 하는 가림막 세팅 측정용 레티클.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019940006957A 1994-04-01 1994-04-01 레티클 및 그 레티클을 사용한 가림막 세팅 방법 KR0144082B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940006957A KR0144082B1 (ko) 1994-04-01 1994-04-01 레티클 및 그 레티클을 사용한 가림막 세팅 방법
GB9506741A GB2288467B (en) 1994-04-01 1995-03-31 A method for use in manufacturing a semiconductor device and a device made by the method
CN95104594A CN1080895C (zh) 1994-04-01 1995-04-01 一种掩模原版及用其测量挡板设定精度的方法
US08/415,720 US5616438A (en) 1994-04-01 1995-04-03 Reticle and a method for measuring blind setting accuracy using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940006957A KR0144082B1 (ko) 1994-04-01 1994-04-01 레티클 및 그 레티클을 사용한 가림막 세팅 방법

Publications (2)

Publication Number Publication Date
KR950030224A true KR950030224A (ko) 1995-11-24
KR0144082B1 KR0144082B1 (ko) 1998-08-17

Family

ID=19380351

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940006957A KR0144082B1 (ko) 1994-04-01 1994-04-01 레티클 및 그 레티클을 사용한 가림막 세팅 방법

Country Status (4)

Country Link
US (1) US5616438A (ko)
KR (1) KR0144082B1 (ko)
CN (1) CN1080895C (ko)
GB (1) GB2288467B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09166416A (ja) * 1995-12-13 1997-06-24 Mitsubishi Electric Corp レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置
US8802359B2 (en) 2011-11-29 2014-08-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. UV glass production method
CN102520590B (zh) * 2011-11-29 2015-05-20 深圳市华星光电技术有限公司 一种遮光板的制作方法
US9029855B2 (en) * 2013-03-15 2015-05-12 Globalfoundries Singapore Pte. Ltd. Layout for reticle and wafer scanning electron microscope registration or overlay measurements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193687A (en) * 1978-06-05 1980-03-18 Rockwell International Corporation High resolution alignment technique and apparatus
IL59629A (en) * 1979-05-11 1983-03-31 Electromask Inc Apparatus and process for photoexposing semiconductor wafers
JPH05217834A (ja) * 1992-01-31 1993-08-27 Sharp Corp マスク上のlsiチップレイアウト方法
US5444538A (en) * 1994-03-10 1995-08-22 New Vision Systems, Inc. System and method for optimizing the grid and intrafield registration of wafer patterns

Also Published As

Publication number Publication date
KR0144082B1 (ko) 1998-08-17
GB2288467A (en) 1995-10-18
GB9506741D0 (en) 1995-05-24
CN1115415A (zh) 1996-01-24
GB2288467B (en) 1997-11-19
CN1080895C (zh) 2002-03-13
US5616438A (en) 1997-04-01

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