JPS5640242A - Mask for semiconductor device - Google Patents

Mask for semiconductor device

Info

Publication number
JPS5640242A
JPS5640242A JP11710679A JP11710679A JPS5640242A JP S5640242 A JPS5640242 A JP S5640242A JP 11710679 A JP11710679 A JP 11710679A JP 11710679 A JP11710679 A JP 11710679A JP S5640242 A JPS5640242 A JP S5640242A
Authority
JP
Japan
Prior art keywords
pattern
dimensions
letter
patterns
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11710679A
Other languages
Japanese (ja)
Other versions
JPS6232783B2 (en
Inventor
Mototsugu Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11710679A priority Critical patent/JPS5640242A/en
Publication of JPS5640242A publication Critical patent/JPS5640242A/en
Publication of JPS6232783B2 publication Critical patent/JPS6232783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To easily judge the fidelity of pattern dimensions for design dimensions by eye measurement by providing a photomask with a key for mask alignment by the pattern of predetermined dimensions. CONSTITUTION:A register stamp for a letter 1 is appointed as 2. A mask when exposing the letter 1 is provided with a key 3 for matching, a letter 4 and the most important dimension name 5 of a pattern. Two each of patterns 7-10 in the axis of the dimension 5 are made by left patterns and punched patterns in x and y directions. The dimension 5 is provided near a display region 6 to avoid confusion with other dimensions and to see in the same visual field of a microscope. The width of a pattern 7 is equal to that of a pattern 8 only when proper exposure. The width of the pattern 8 becomes wider than that of the pattern 7 at excessive exposure. In this way, the relative comparison of dimensions is done and the fidelity of resist pattern dimensions for the pattern design dimensions of a photomask will be inspected with extremely small errors.
JP11710679A 1979-09-11 1979-09-11 Mask for semiconductor device Granted JPS5640242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11710679A JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11710679A JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5640242A true JPS5640242A (en) 1981-04-16
JPS6232783B2 JPS6232783B2 (en) 1987-07-16

Family

ID=14703542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11710679A Granted JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5640242A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960439A (en) * 1982-09-30 1984-04-06 Fujitsu Ltd Photomask
JPS59143159A (en) * 1983-02-07 1984-08-16 Mitsubishi Electric Corp Pattern overlapping method for photoengraving process
JPS60202933A (en) * 1984-03-16 1985-10-14 Fujitsu Ltd Inspecting method of reticle
JPH02159011A (en) * 1988-12-13 1990-06-19 Fujitsu Ltd Control of pattern size in photolithography

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960439A (en) * 1982-09-30 1984-04-06 Fujitsu Ltd Photomask
JPH0473576B2 (en) * 1982-09-30 1992-11-24
JPS59143159A (en) * 1983-02-07 1984-08-16 Mitsubishi Electric Corp Pattern overlapping method for photoengraving process
JPS60202933A (en) * 1984-03-16 1985-10-14 Fujitsu Ltd Inspecting method of reticle
JPH02159011A (en) * 1988-12-13 1990-06-19 Fujitsu Ltd Control of pattern size in photolithography

Also Published As

Publication number Publication date
JPS6232783B2 (en) 1987-07-16

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