KR0119920B1 - Photomask for resolution measurement of exposure device - Google Patents
Photomask for resolution measurement of exposure deviceInfo
- Publication number
- KR0119920B1 KR0119920B1 KR1019940007284A KR19940007284A KR0119920B1 KR 0119920 B1 KR0119920 B1 KR 0119920B1 KR 1019940007284 A KR1019940007284 A KR 1019940007284A KR 19940007284 A KR19940007284 A KR 19940007284A KR 0119920 B1 KR0119920 B1 KR 0119920B1
- Authority
- KR
- South Korea
- Prior art keywords
- resolution
- photomask
- pattern
- exposure
- measuring
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
제1도는 웨이퍼 상의 스크라이브 레인(scribe lane)내에 형성된 노광이 해상도 측정용 패턴을 도시한 웨이퍼의 평면도.1 is a plan view of a wafer in which exposure formed in a scribe lane on the wafer shows a resolution measurement pattern;
제2도는 상기 제1도의 노광기 해상도 측정용 패턴의 상세도.FIG. 2 is a detailed view of the exposure device resolution measurement pattern of FIG.
제3도는 본 발명에 따른 노광기 해상도 측정용 패턴의 구조도.3 is a structural diagram of a pattern for measuring the resolution of an exposure machine according to the present invention;
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 스크라이브 레인(scribe lane) 2 : 노광기 해상도 측정용 패턴1: scribe lane 2: Pattern for measuring the exposure resolution
3 : 감광막 4 : 크롬막3: photosensitive film 4: chrome film
4' : 연결막4 ': connecting membrane
본 발명은 노광기 해상도 측정용 포토마스크에 관한 것으로, 미세패턴의 필링(peeling)현상을 방지하는 노광기 해상도 측정용 포토마스크에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask for measuring the resolution of an exposure machine, and more particularly to a photomask for measuring the resolution of an exposure device for preventing peeling of fine patterns.
일반적으로, 반도체 회로 제조시 중요한 하나의 단계는 동일한 많은 회로를 하나의 췌퍼 상에 동시에 형성시키는 포토 리소그래피(Photo Lithography)공정이며, 이 포토 리소그래피 공정은 하나의 웨이퍼에 동일한 다수의 회로를 형성하는 일괄제조 공정으로 반도체 소자의 수율을 결정 짓는 중요한 공정중의 하나이다.In general, one important step in the fabrication of semiconductor circuits is a photo lithography process that simultaneously forms many identical circuits on one bumper, which is a batch that forms multiple identical circuits on one wafer. The manufacturing process is one of the important processes for determining the yield of semiconductor devices.
따라서, 포토마스크 공정은 극도로 정확성을 요구하고, 또한 각 포토 리소그래피 공정단계에서 포토마스크의 정렬(array)이 잘 이루어져야한다.Therefore, the photomask process requires extremely accuracy and the photomask should be well aligned at each photolithography process step.
특히, 포토마스크 공정 중 노광기의 해상도, 포토공정 및 식각공정에서 형성된 패턴의 해상도, 노광기 최상의 초점(focus)상태를 측정하기위하여 노광기 해상도 측정을(Resolution)포토마스크를 주로 사용해 왔다.In particular, in order to measure the resolution of the exposure machine during the photomask process, the resolution of the pattern formed in the photo process and the etching process, and the best focus state of the exposure machine, the exposure solution resolution photomask has been mainly used.
종래 노광기 해상도 측정용 포토마스크를 도면 제1도 및 제2도를 참조하여 설명하면 다음과 같다.The conventional photomask for measuring the resolution of an exposure machine will be described with reference to FIGS. 1 and 2 as follows.
노강기 해상도 측정용 패턴(2)은 제1도와 같이 각각의 능동 영역을 구분짓는 웨이퍼상의 스크라이브 레인(Scribe lane)(1) 내에 형성하는데, 이때 형성된 패턴은 제2도와 같은 동일한 선폭 선폭간격을 가지는 여러개의 감광막(3) 패턴 군(group)으로 이루어지고, 그 군의 사이즈(size)를 양각 또는 음각의 글씨로 형성화하여 각 군의 선폭간격을 인지할 수 있도록하여 최소선폭을 갖는 선명한 감광막(3) 패턴으로 노광기의 해상도를 측정하여왔다.The refurbishment resolution measurement pattern 2 is formed in a scribe lane 1 on a wafer that separates each active region as shown in FIG. 1, wherein the formed pattern has the same line width line spacing as shown in FIG. The photosensitive film 3 is composed of a group of patterns, and the size of the group is formed by embossed or engraved letters so that the line width interval of each group can be recognized. 3) The resolution of the exposure machine has been measured in a pattern.
그러나, 상기와 같은 노광기 해상도 측정용 포토마스크를 이용애 스크라이브 레인 상에 형성된 노광기 해상도 측정용 패턴은 반도체 소자들이 고집적화 됨으로써 노광기의 해상력이 0.4㎛이하까지 이르게되어 매우 미세하게 형성된다.However, the exposure device resolution measurement pattern formed on the scribe lane using the above-described exposure device resolution measurement photomask is formed very finely because the semiconductor device is highly integrated and the resolution of the exposure device reaches 0.4 μm or less.
이때 상기 미세한 패턴은 포토 리소그래피 작업 및 식각공정을 거치면서 필링을 야기시켜 결함을 유발하는 문제점을 초래해왔다.At this time, the fine pattern has caused a problem of causing defects during the photolithography process and the etching process.
따라서, 상기 문제점을 해결하기 위하여 안출된 본 발명은 종래의 노광기 해상도 측정용 포토마스크 패턴의 장점을 그대로 유지하면서 웨이퍼 상의 노광기 해상도 측정용 미세패턴을 필링현상을 방지하는 노광기 해상도 측정용 포토마스크를 제공하는데 그 목적이 있다.Accordingly, the present invention devised to solve the above problems provides an exposure apparatus resolution measuring photomask which prevents the phenomenon of peeling the fine pattern for exposure apparatus resolution measurement on the wafer while maintaining the advantages of the conventional exposure mask resolution photomask pattern. Its purpose is to.
상기 목적을 달성하기 위하여 본 발명은, 노광기 해상도 측정용 패턴의 필링현상을 방지하는 포토마스크에 있어서, 중심부위에서 밖으로 사이즈별로 축차적으로 커지도록 소정 패턴을 형성하되, 상기 소정 패턴을 연결막으로 서로 연결하여 형성되는 것을 특징으로한다.In order to achieve the above object, the present invention, in the photomask to prevent the phenomenon of peeling of the exposure device resolution measurement pattern, to form a predetermined pattern to be gradually increased by size from the center to the outside, the predetermined pattern is connected to each other by a connection film It is characterized by being formed.
이하, 첨부된 도면 제3도를 참조하여 본 발명에 따른 일실시예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment according to the present invention will be described in detail with reference to FIG. 3.
먼저, 제3도는 필링현상을 방지하는 노광기 해상도 측정용 포토마스크에 형성된 크롬(Cr)막 패턴(4)을 도시한 것으로, 소정의 크로막 패턴(4)을 스크라이브 레인 내에 장방형(?)으로 연결막(4')을 이용하여 서로 서로 연결하여 노광기 해상도 측정용 포토마스크를 형성한다.First, FIG. 3 shows a chromium (Cr) film pattern 4 formed on the photomask for measuring the resolution of an exposure machine to prevent peeling. The predetermined chromium pattern 4 is connected in a scribe lane in a rectangle. The film 4 'is connected to each other to form a photomask for measuring the exposure machine resolution.
이때 상기 크롬막 패턴(4)은 사이즈별로 2개씩, 축차적으로 크롬막 패턴(4)중심에서 밖을 향하여 0.3㎛, 0.4㎛, 0.6㎛, 0.8㎛ 등의 사이즈로 형성한다.At this time, two chromium film patterns 4 are formed in sizes of 0.3 μm, 0.4 μm, 0.6 μm, 0.8 μm, and the like, sequentially outward from the center of the chrome film pattern 4.
여기서 전체 노광기 해상도 측정용 포토마스크의크기는 20㎛ 내지 50㎛로 형성하며, 패턴의 모양은 원형(○),ㄱ형(ㄱ),ㄷ형(ㄷ)등의 모양으로도 가능하다.Here, the size of the photomask for measuring the resolution of the entire exposure machine is formed in a range of 20 μm to 50 μm, and the shape of the pattern may be in the shape of a circle (○), a shape (a), or c shape (c).
이어서, 상기 노광기 해상도 측정용 포토마스크를 이용해서 반도체 기판 상에 감광막 패턴을 형성하면 상기 연결막(4')으로 인한 감광막 패턴이 노광기 해상도 측정용 미세 패턴의 개별적인 필링을 방지한다.Subsequently, when the photoresist pattern is formed on the semiconductor substrate by using the photomask for measuring the exposure resolution, the photoresist pattern caused by the connecting film 4 ′ prevents individual peeling of the fine pattern for measuring the exposure resolution.
상기와 같이 이루어지는 본 발명은 연결막을 이용하여 노광기 해상도 측정용 포토마스크 내의 크롬막패턴을 서로 연결되게 형성함으로써 상기 노광기 해상도 측정용 포토마스크를 이용하여 웨이퍼 상에 형성되는 노광기 해상도 측정용 미세패턴의 필링현상을 방지할 수 있어 노광기 해상도를 정확하게 측정할 수 있다.According to the present invention, the chromium film patterns in the exposure apparatus resolution measurement photomask are connected to each other by using a connection film, thereby filling the exposure apparatus resolution measurement micropattern formed on the wafer using the exposure mask resolution measurement photomask. The development can be prevented so that the exposure resolution can be measured accurately.
Claims (3)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940007284A KR0119920B1 (en) | 1994-04-07 | 1994-04-07 | Photomask for resolution measurement of exposure device |
| DE19512245A DE19512245C2 (en) | 1994-04-01 | 1995-03-31 | Photo mask for measuring the resolution of exposure devices |
| CN95104509A CN1086811C (en) | 1994-04-01 | 1995-04-01 | Photomask for the measurement of resolution of exposure equipment |
| US08/415,608 US5578401A (en) | 1994-04-01 | 1995-04-03 | Photomask for the measurement of resolution of exposure equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940007284A KR0119920B1 (en) | 1994-04-07 | 1994-04-07 | Photomask for resolution measurement of exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950029847A KR950029847A (en) | 1995-11-24 |
| KR0119920B1 true KR0119920B1 (en) | 1997-10-22 |
Family
ID=19380592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940007284A KR0119920B1 (en) | 1994-04-01 | 1994-04-07 | Photomask for resolution measurement of exposure device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0119920B1 (en) |
-
1994
- 1994-04-07 KR KR1019940007284A patent/KR0119920B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950029847A (en) | 1995-11-24 |
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