五、發明説明（i) 技術領域： 本發明係有關於一種利用游標尺以檢視光罩圖案分段 曝光對準的方法，特別是有關於一種利用游標尺原理以決定 同一晶粒分段曝光後圖案對準精確度的方法。 發明背 在積體電路的製程技術中，必須在晶圓上刻劃各種圖 案，以製備半導體元件，此刻劃圖案的技術便是微影技術 (Photolithography)，整個半導體製程中，微影技術可說是佔 有相當舉足輕重的地位，尤其，整個半導體工業的元件積集 度(Integration)，是否能繼續的往0.25微米或更小的線寬進 行，端賴於微影製程的發展是否順利而定，而微影技術的一 大瓶頸之一就是如何於曝光和對準過程中精確地控制和監 測(monitor)，如此之情況一直是半導體工業界一個非常困擾 的問題。所以各家半導體之廠商，都想盡辦法不斷地致力於 研究如何提升微影技術的正確性。 經濟部中央樣來局員工消費合作社印聚 (請先閱讀背而之注έ_'·δ,'再填寫本頁) 微影製程中，最重要的步驟即是曝光(Exposure)。首先， 在晶圓上塗佈一層光阻(Resist)，然後，來自光源的平行光， 經過以玻璃爲主體的光罩(Mask)後，便打在這層光阻上。因 爲光罩上面有圖案，這些圖案將使入射光反射，因而透過光 罩的光束也具備與光罩相同的圖形，這進一步使得晶圓表面 的光阻得以進行選擇性的感光。於是光罩上的圖案，便完整 的傳遞到晶圓表面的光阻上，這個步驟我們稱之爲“曝光”。 上述之光阻有兩種：若曝光後經過顯影(Development)，光阻 2 本紙張尺度適用中國國家標準（CNS ) Λ4規if, ： _ 經"部中央^渙局只工消費合作社印製 五、發明説明（1) 所獲得的圖案與光罩上的相同，稱爲正光阻；若光阻所獲得 的圖案與光罩上的剛好呈互補，如同照相的照片和底片的關 係時，則稱爲負光阻。 進行曝光步驟時，爲了避免光罩與晶片直接接觸，使得 ‘光罩表面隨著曝光次數的增加而陸續的沾上微粒，影響後續 轉移圖案的品質，並且爲達到較高圖案轉移的解析度，現在 多選用一種步進機(Stepper)來進行曝光。然而，過去在使用 步進機進行曝光時，傳統微影製程中經常遭遇的問題是如何 將電路佈局中許多不同層次的圖案，正確無誤地曝光在所設 計的區域，這是屬於圖案上下對準問題β 本發明所欲解決的問題則是同一層次曝光圖案前後左 右對齊問題，受到步進機預設的透鏡及網框(Reticle)大小所 限制，以ASMLPAS5500/100C機台爲例，其曝光晶粒(Chip) 可容忍的最大尺寸爲22mm X 22mm或27.4mm X 11.4mm，當某些設計特殊的晶粒大小超出上述步進機的規格 限制時，就必須對此種晶粒進行分段多次曝光(Multi-exposures)，這樣一來便產生在同一晶粒中每一次曝光的圖案 該如何對準的問題。 若是曝光時因爲步進曝光機或是光罩放置的問題，造成 晶粒中分多次曝光的圖案之間無法對準而排列整齊的話，就 必須將整批晶圓報廢，嚴重增加了生產的成本》過去，使用 於對準不同層次圖案的游標尺(Vernier)結構，因爲需要額外 作爲參考用的蝕刻層(Etched Layer)，在上述必須於同一層晶 粒中進行不同圖案的對準時，並無法適用。 3 $紙張尺度適用中ϊι國家標導（―cnsI^4恍格（no χ ：> η ' (請先閱讀背而之;±念事項再填寫"頁)V. Description of the Invention (i) Technical Field: The present invention relates to a method for segmented exposure alignment using a vernier to view a photomask pattern, and in particular to a method for determining the same grain segmented exposure using the principle of a vernier. Method of pattern alignment accuracy. The invention is backed by the process technology of integrated circuits. It is necessary to scribe various patterns on the wafer to prepare semiconductor elements. The technology of pattern engraving is photolithography. In the entire semiconductor manufacturing process, lithography technology can It is said that it holds a very important position. In particular, whether the integration of components in the entire semiconductor industry can continue to line width of 0.25 microns or less depends on whether the development of the lithography process is smooth. One of the major bottlenecks of lithography technology is how to accurately control and monitor during the exposure and alignment process. This situation has always been a very troublesome problem in the semiconductor industry. Therefore, various semiconductor manufacturers have made every effort to continuously study how to improve the accuracy of lithography technology. Exposure of Employees' Cooperatives in the Central Bureau of the Ministry of Economic Affairs (please read the note _ '· δ,' before filling out this page) The most important step in the lithography process is exposure. First, a layer of photoresist is coated on the wafer, and then, the parallel light from the light source passes through a mask mainly composed of glass, and then hits this layer of photoresist. Because there are patterns on the reticle, these patterns will reflect the incident light, so the light beam passing through the reticle also has the same pattern as the reticle, which further allows the photoresist on the wafer surface to be selectively photosensitive. Therefore, the pattern on the photomask is completely transferred to the photoresist on the wafer surface. This step is called “exposure”. There are two types of photoresistors mentioned above: If development is performed after exposure, photoresist 2 is a paper standard that conforms to the Chinese National Standard (CNS) Λ4, if,: 5. Description of the invention (1) The pattern obtained is the same as that on the photomask, which is called positive photoresistance; if the pattern obtained by the photoresist is exactly complementary to the photomask, as in the case of photographic photos and negatives, then Called negative photoresist. During the exposure step, in order to avoid direct contact between the photomask and the wafer, the surface of the photomask will gradually become covered with particles as the number of exposures increases, which will affect the quality of subsequent transfer patterns, and to achieve a higher resolution of pattern transfer, Now choose one more stepper (Stepper) for exposure. However, in the past, when using a stepper for exposure, the problem often encountered in the traditional lithography process is how to correctly and accurately expose many different levels of patterns in the circuit layout to the designed area. This is a pattern alignment. Problem β The problem to be solved by the present invention is the front-to-back alignment of the exposure pattern at the same level, which is limited by the size of the lens and the frame (Reticle) preset by the stepper. Take the ASMLPAS5500 / 100C machine as an example. The maximum tolerable size of the chip is 22mm X 22mm or 27.4mm X 11.4mm. When the size of some special design grains exceeds the limit of the above stepper, it is necessary to segment this kind of grains. Multi-exposures, so that the problem of how to align the pattern of each exposure in the same die. If it is because of the problem of stepping exposure machine or mask placement during the exposure that the patterns in the die are not aligned and aligned neatly, the entire batch of wafers must be scrapped, which seriously increases the production "Cost" In the past, Vernier structures used to align different levels of patterns, because an additional etched layer (Etched Layer) was needed as a reference. When different patterns of alignment must be performed on the same layer of grains, and Not applicable. 3 $ Paper size applies to the Chinese national standard (―cnsI ^ 4 （格 (no χ: > η '(please read the other side first; fill in the readings and read the "quotation page"))
鳕 ΙΓ 五、發明説明（；ϊ ) 發明之概述： 本發明之主要目的爲提供一種利用游標尺以檢視光罩 圖案分段曝光對準的方法，將光罩圖案分割爲至少二部份來 進行曝光，於各部份邊緣設置游標刻度以及重疊區，會重疊 區重疊並於曝光後，顯影出游標刻度的對齊狀況可決定曝光 圖案對準的精確度。 本發明之次要目的爲提供一種利用游標尺以檢視光罩 圖案分段曝光對準的方法，將光罩圓案分割爲至少二部份來 進行曝光，於光罩圖案邊緣設有游標刻度以及重疊區，而所 述游標刻度具有前後方向及左右方向兩組刻度線，可用以進 行不同部份曝光圖案前後左右的對準。 爲了達到上述之各種目的，本發明使用了以下的方法·· 首先’將光罩圖案分割爲至少二部份來進行曝光，然後，於 第一部份光罩圖案第一邊緣之第一側設置一第一游標刻 度，而於其第二邊緣設有一第一重疊區，其中該第二邊緣相 對該第一部份光罩圖案與該第一側相對該第一邊緣爲相同 方位’而與第一部份光罩圖案相對整個光罩圖案爲相反方 位。 經"部中央標準局員工消费合作社印装鳕 IΓ 5. Description of the invention (; ϊ) Summary of the invention: The main purpose of the present invention is to provide a method of using the vernier to view the mask pattern segmented exposure alignment, which is performed by dividing the mask pattern into at least two parts. For exposure, a vernier scale and an overlapping area are set at the edge of each part. The overlapping area overlaps and after the exposure, the alignment of the vernier scale is developed to determine the accuracy of the alignment of the exposure pattern. A secondary object of the present invention is to provide a method for segmented exposure alignment using a vernier to view a mask pattern. The mask pattern is divided into at least two parts for exposure, and a vernier scale is provided on the edge of the mask pattern. Overlapping area, and the vernier scale has two sets of scale lines in the front-rear direction and the left-right direction, which can be used to perform front-back and left-right alignment of different partial exposure patterns. In order to achieve the above-mentioned various purposes, the present invention uses the following method .. First, 'the mask pattern is divided into at least two parts for exposure, and then, it is set on the first side of the first edge of the first part of the mask pattern. A first vernier scale, and a second overlapping area is provided on a second edge thereof, wherein the second edge is in the same orientation with respect to the first partial mask pattern as the first side with respect to the first edge; A part of the mask pattern is opposite to the entire mask pattern. Printed by " Consumer Cooperative of Employees of Central Bureau of Standards
^ . c I. (請先間讀背面之注念事項再4-r>:J本S 訂 接著，於該第二部份光罩圖案第一邊緣之第二側設置 一第二游標刻度，而於第三邊緣設有一第二重叠區，其中該 第三邊緣相對該第二部份光罩圖案與該第二側相對該第一 邊緣爲相同方位，而與第二部份光罩圖案相對整個光罩圖案 爲相反方位。使用上述第一部份光罩圖案對一晶圓進行第一 次曝光，再使用上述第二部份光罩圖案，使其第二重疊區與 4 本紙張尺度適用中國國家標準（CNS’! .,\4規诂t B' 五、發明説明（4) 上述第一部份光罩圓案之第一重疊區重疊在一起，對上述晶 圓進行第二次曝光，最後，對照晶圓上第一和第二游標刻度 的位置，可決定曝光圖案接合的準確度。 本發明的重點乃在於所述第一及第二游標刻度皆包括 前後方向及左右方向兩組刻度線，而該兩組刻度線又包括一 中央刻度線長於其他刻度線，可作爲前後左右方向圖案之對 準，當兩光罩圖案之重疊區重疊在一起時，第一及第二游標 尺刻度乃於其中央刻度線皆對齊，當兩次曝光顯影後的圖案 其第一游標刻度與第二游標刻度對準於其由中央刻度線數 來第η條刻度線時，其曝光對準誤差的大小爲兩游標刻度間 距差值的η倍。 圓式簡要說明： 圖一Α爲本發明光罩圖案過長加以分割之示意圖； 圖一.B爲本發明箄一部份光罩圖案設置游標刻度及重 疊區之示意圖； 圖一 C爲本發明第二部份光罩圖案設置游標刻度及重 叠區之不意圖； 經"'部中央樣"-局負工消費合作社印^ 圖一 D爲本發明光罩圖案上游標刻度設置圖； 圖一 E爲本發明光罩圖案上兩組游標刻度於中央刻度線 對齊之示意圖； 圖二A爲本發明利用第一部份光罩圖案進行第一次曝 光之晶圓示意圖； 圖二B爲本發明利用第二部份光罩圖案進行第二次曝 5 本紙張尺度適用中國國家標準（CNS ) i 210X29·^》^ :. 五、發明説明（I ) 光之晶圓示意圖； "先閱讀背而之注"事項再填寫本頁 圖二C爲本發明於顯影後晶圓上游標刻度對齊無誤之 晶粒不意圖； 圖二D爲本發明於顯影後晶圓上游標刻度對齊第n條刻 度線之晶粒示意圖。 號說明： 1- 光罩圖案 11-前半光罩圖案 13-後半光罩圖案 訂 113-前半光罩圖案左邊緣切割道 115-前半光罩圖案X方向游標刻度 1Π-前半光罩圖案Υ方向游標刻度 119-第一重叠區 133-後半光罩圖案左邊緣切割道 135-後半光罩圖案X方向游標刻度 137-後半光罩圖案Υ方向游標刻度 139-第二重疊區 2- 晶圓 21-晶粒 經滴部中央捸汍局Η工消费合作社印鉍 211 -晶粒前半部圖案 213-晶粒後半部圖案 215-晶粒上前半部圖案X方向游標刻度 217-晶粒上前半部圖案Υ方向游標刻度 235-晶粒上後半部圖案X方向游標刻度 237-晶粒上後半部圖案Υ方向游標刻度 6 本紙張尺度適用中國國家榡準（CNS ) Λ4^格ί '^. c I. (Please read the notes on the back before 4-r >: J this order. Then, set a second vernier scale on the second side of the first edge of the second part of the mask pattern, A second overlapping area is provided on the third edge, wherein the third edge is in the same orientation as the second part of the mask pattern and the second side is opposite the first edge, and is opposite to the second part of the mask pattern. The entire mask pattern is in the opposite orientation. Use the first part of the mask pattern to make a first exposure to a wafer, and then use the second part of the mask pattern to make the second overlap area suitable for 4 paper sizes. Chinese National Standard (CNS '!., \ 4 诂 诂 B') 5. Description of the invention (4) The first overlapping area of the first part of the mask circle above is overlapped, and the second exposure of the wafer is performed. Finally, the accuracy of the exposure pattern joining can be determined by comparing the positions of the first and second vernier scales on the wafer. The focus of the present invention is that the first and second vernier scales both include the front-back direction and the left-right direction. Tick marks, and the two sets of tick marks include a central tick mark longer than The other scales can be used to align the patterns in the front, back, left, and right directions. When the overlapping areas of the two mask patterns overlap, the first and second vernier scales are aligned at their central scales. After two exposures and developments, When the first vernier scale and the second vernier scale of the pattern are aligned with the n-th scale line from the central scale line, the magnitude of the exposure alignment error is η times the difference between the two vertex scales. Note: Figure 1A is a schematic diagram of a mask pattern of the present invention that is too long and divided; Figure 1B is a schematic diagram of a part of the mask pattern of the present invention with cursor scales and overlapping areas; Figure 1C is the second part of the present invention It is not intended to set the vernier scale and overlapping area of the photomask pattern; printed by "Ministry Central Sample" -Printed by the Office of the Consumer Cooperative ^ Figure 1D is a diagram of the upstream mark scale setting of the photomask pattern of the present invention; Schematic diagram of two groups of vernier scales on the mask pattern of the present invention aligned with the central scale line; FIG. 2A is a schematic diagram of a wafer using the first part of the mask pattern for the first exposure of the present invention; FIG. Two A second photomask pattern is exposed for the second time. 5 This paper size is applicable to Chinese National Standard (CNS) i 210X29 · ^ "^ :. V. Description of the invention (I) Schematic diagram of the wafer of light; " Read the note behind the back "; Please fill in this page again. Figure 2C is the intention of the present invention to align the upstream scale of the wafer after development without errors; Figure 2D is the invention to align the upstream scale of the wafer after development. Description of the grain No. Description: 1- mask pattern 11- front half mask pattern 13- rear half mask pattern 113- front half mask pattern left edge cutting road 115- front half mask pattern X direction cursor scale 1Π- front half mask pattern Υ Directional vernier scale 119-First overlapping area 133-Rear half mask pattern left edge cutting line 135-Rear half mask pattern X direction vernier scale 137-Rear half mask pattern 游 Direction vernier scale 139-Second overlapping area 2-Wafer 21-Crystal via the central government bureau of masonry consumer cooperatives printed bismuth 211-Pattern of the first half of the grain 213-Pattern of the second half of the grain 215-Pattern of the upper half of the grain X-axis vernier scale 217-Upper half of the grain Pattern Υ direction vernier scale 235-after grain X-direction vernier pattern portion on the die 237- rear half Υ direction vernier pattern 6 Paper scale applies Su Chinese national registration (CNS) Λ4 ^ grid ί '
五、發明説明（< ) 經漪部中央樣涞局員工消费合作社印裝 發明詳緬說明： 本發明是有關一種利用游標尺以檢視光罩圖案分段曝 光對準的方法，在詳細說明中是運用具體實施例說明本發明 的原則與精神。 當微影製程中所需製定的晶粒圖案太大，使得步進機上 對應光罩的圖案大小超出其限制規格(如上所述)時，所述晶 粒圖案便無法一次就製作完成，本發明乃使用以下的方法來 加以改良：參考圖一，首先，將所需進行微影的光罩圖案1 分割爲二部份來進行曝光，如果圖案爲左右方向過長，則分 割爲左右兩部份，如果圖案爲前後方向過長，就分割爲前後 兩部份，如圖一 A所示，接下來以分割成前後兩部份爲例， 探討光罩圖案對準問題，而分割成左右兩部份亦可以類似的 方式來進行，如果，晶粒必須分割成更多次的曝光，則仍是 依本發明的精神實施之。 在上述前半光罩圖案11左邊緣切割道113之下側設置 一組X方向游標刻度115及Y方向游標刻度117，而於其 後邊緣設有一塊第一重疊區119，如圖一 B所示。同樣地， 在上述後半光罩圖案13左邊緣切割道133之上側也設置一 組X方向游標刻度135及Y方向游標刻度137，而於其前 邊緣設有一塊第二重疊區139，如圖一 C所示，其中所述第 一及第二重疊區119、139寬度約爲0.2至0.4微米，而游 標刻度115、117及135、137分別爲間距0.5微米及0.4 微米的刻度線，並且各包括一條中央刻度線Ax、AY、Bx、 ΒΥ，較長於其他刻度線，以代表零刻度位置，如圖一 D所 7 (請t閱讀背面之：;i意事項再填寫本頁)V. Description of the invention (<) Detailed description of the invention printed by the Consumer Cooperative of the Central Sample Bureau of the Ministry of Economics: The present invention relates to a method of using the vernier to view the segmented exposure alignment of the mask pattern. In the detailed description, It uses specific embodiments to explain the principles and spirit of the present invention. When the grain pattern required in the lithography process is too large, so that the size of the pattern corresponding to the photomask on the stepper exceeds its limit specification (as described above), the grain pattern cannot be produced in one time. The invention is improved by the following method: Referring to FIG. 1, first, the reticle mask pattern 1 to be lithographic is divided into two parts for exposure. If the pattern is too long in the left-right direction, it is divided into two parts. If the pattern is too long in the front-to-back direction, it is divided into two parts, as shown in Figure 1A. Next, the division into the front and back parts is taken as an example to discuss the alignment of the mask pattern. The part can also be carried out in a similar manner. If the die must be divided into more exposures, it is still implemented in accordance with the spirit of the present invention. A set of X-direction vernier scales 115 and Y-direction vernier scales 117 are provided below the left edge cutting path 113 of the aforementioned front half-mask pattern 11, and a first overlapping area 119 is provided at the rear edge thereof, as shown in FIG. 1B . Similarly, a set of X-direction vernier scales 135 and Y-direction vernier scales 137 are also provided on the upper side of the left half cutting pattern 133 of the rear half mask pattern 13 described above, and a second overlapping area 139 is provided on the front edge thereof, as shown in FIG. As shown in C, the widths of the first and second overlapping regions 119 and 139 are about 0.2 to 0.4 micrometers, and the vernier scales 115, 117 and 135 and 137 are scale lines with a pitch of 0.5 micrometers and 0.4 micrometers, respectively, and each includes A central scale line Ax, AY, Bx, ΒΥ is longer than other scale lines to represent the position of the zero scale, as shown in Figure 1D and 7 (please read the following on the back:; I will fill in this page if you want to matter)
本紙張尺度適用中國國家標準（CNS ) /\4叱格t ：Μ0 χ：^:Μί ) 五、發明説明（7) 示，兩組游標刻度115、117及135、137設於切割道113、 133的位置乃使得當第一及第二重疊區119 ' 139重叠在一 起時，中央刻度線Αχ對齊Bx，AY對齊BY，而且各組刻度 線不會互相重叠，如圖一 E所示，當然，實際的游標尺寸， 可視製程的需求而做適當的調整。 上述之光罩圖案若太大，亦可分爲三部份以上，其游標 刻度之設置可比照上述二部份之設置方式，光罩圖案11及 13設有游標刻度115、117及135、137的左邊緣亦可改爲 右邊緣，並且游標刻度115及117設於切割道113的位置亦 可上下調換，同時游標刻度135及137設於切割道133的位 置也須對調，甚至游標刻度115、117及135、137的間距 亦可互換，只要其具有一微小間距差例如：0.1微米，皆可 達到圖案對準的目的，以上種種仍不違反本發明的原則，因 而不脫離本發明的專利範圍。 經濟部中央標隼局員工消費合作枉印製 {請先間讀背而之注意事項再填邛本頁 、1Τ 線. 參考圖二來說明本發明的實施方法，本發明的重點乃在 於使用上述前半光罩圖案11，對一晶圓2進行第一次曝光， 如圖二A所示，對於每一個晶粒21而言，第一次曝光只製 定其前半部圖案211，接著，使用上述後半光罩圖案13， 調整其位置使得其第二重疊區139與上述前半光罩圖案11 之第一重疊區119重疊在一起，再對上述晶圓2進行第二次 曝光’以製定晶粒21後半部圖案213，如圖二B所示《上 述兩部份圖案211及213各包括一對游標刻度215、217及 235、237，對照晶圓2兩次曝光後，每一個晶粒21左邊緣 之游標刻度位置51、52，可決定兩次曝光圚案對準的效 8 本紙張尺度適用中國國家標準（CNS ) Λ4規格（—This paper scale applies the Chinese National Standard (CNS) / \ 4 叱 格 t: Μ0 χ: ^: Μί) 5. Description of the invention (7) shows that two sets of vernier scales 115, 117 and 135, 137 are set on the cutting path 113, The position of 133 is such that when the first and second overlapping areas 119 '139 overlap, the central scale line Aχ is aligned with Bx and AY is aligned with BY, and the groups of scale lines will not overlap each other, as shown in Figure 1E, of course. The actual cursor size can be adjusted appropriately according to the needs of the process. If the above mask pattern is too large, it can be divided into more than three parts. The setting of the vernier scale can be compared with the setting method of the above two parts. The mask patterns 11 and 13 are provided with vernier scales 115, 117, 135, and 137. The left edge of can also be changed to the right edge, and the positions of the vernier scales 115 and 117 on the cutting road 113 can also be changed up and down. At the same time, the positions of the vernier scales 135 and 137 on the cutting road 133 must be reversed, even the vernier scales 115, The pitches of 117, 135, and 137 are also interchangeable. As long as they have a small pitch difference, such as 0.1 micron, the purpose of pattern alignment can be achieved. The above still do not violate the principles of the present invention, and therefore do not depart from the patent scope of the present invention. . Printed by the staff of the Central Bureau of Standards, Ministry of Economic Affairs, for consumer cooperation. {Please read the precautions before filling in this page and the 1T line. Refer to Figure 2 to explain the implementation method of the present invention. The focus of the present invention is to use the above. The first half mask pattern 11 is used for the first exposure of a wafer 2. As shown in FIG. 2A, for each die 21, only the first half pattern 211 is formulated for the first exposure, and then the above-mentioned second half is used. The mask pattern 13 is adjusted so that its second overlapping region 139 overlaps with the first overlapping region 119 of the aforementioned first half mask pattern 11, and then a second exposure is performed on the wafer 2 to define the second half of the die 21 Part pattern 213, as shown in Figure 2B. "The above two part patterns 211 and 213 each include a pair of vernier scales 215, 217, and 235, 237. After two exposures to wafer 2, the left edge of each die 21 The vernier scale positions 51 and 52 can determine the effect of the two-exposure plan alignment. 8 This paper size applies the Chinese National Standard (CNS) Λ4 specification (—
五、發明説明（f ) {請尤閱讀背面之注意事項耳填1本頁 果。特別要注意的是，其中所述第一次曝光形成的游標刻度 215、217乃利用負光阻製造方式，於曝光顯影後，刻度處 材質可溶於顯影液中，其他邊緣部份則不透光，光阻仍保持 未感光的狀態，因而經過第二次曝光時，方可呈現出刻度 235、237的痕跡》 -φ 檢視X方向是否對準時，乃對照上述晶粒21上游標刻 度115及135，而檢視Y方向則對照游標刻度117及137， 當中央刻度線Ax對齊Bx時，代表X方向圖案對準了，同樣 地，中央刻度線AY對齊BY時，則代表Y方向圖案對準了， 如圖二C所示，然而，當游標刻度115與游標刻度135對準 於其由中央刻度線Ax及Bx算來第η條刻度線N時，其X 方向曝光位置誤差的大小，爲兩游標刻度間距差值(0.1微米) 的η倍(neN)，同理，若游標刻度117與游標刻度137對準 於其由中央刻度線AY及BY算來第m條刻度線Μ時，其Y 方向曝光位置誤差的大小，爲兩游標刻度間距差值(0.1微米) 的m倍(meN)，如圖二D所示。因此，利用本發明之設計可 有效決定光罩圖案分兩次曝光後圖案對準的精確度。 經濟部中央橾準局員工消f合作社印裂 上述說明係以較佳實施例來閲述本發明，而非限制本發 明，並且熟知半導體技藝之人士皆能明瞭，適當而作些微的 改變及調整，仍將不失本發明之要義所在，亦不脫離本發明 之精神和範圍。 9 本紙浪尺度適用中國國家標準（CNS ) /\4規格ί ：：10X29\>«V. Description of the Invention (f) {Please read the notes on the back to fill in the first page of the results. In particular, it should be noted that the vernier scales 215 and 217 formed by the first exposure are made by negative photoresistance. After exposure and development, the material of the scale is soluble in the developing solution, and other edge parts are not transparent. The light and photoresist remain unsensitized, so after the second exposure, traces of the scales 235 and 237 can be displayed.-Φ When checking whether the X direction is aligned, it is compared with the upstream scale 115 and the scale 21 of the grain 21 above. 135, and the Y direction is compared with the vernier scales 117 and 137. When the central scale line Ax is aligned with Bx, it means that the X direction pattern is aligned. Similarly, when the central scale line AY is aligned with BY, it means that the Y direction pattern is aligned. As shown in FIG. 2C, however, when the vernier scale 115 and the vernier scale 135 are aligned with the n-th scale line N calculated from the central scale lines Ax and Bx, the magnitude of the exposure position error in the X direction is two. Η times (neN) of the difference between the vernier scale spacing (0.1 micron). Similarly, if vernier scale 117 and vernier scale 137 are aligned with the mth graduation line M calculated from the central graduation lines AY and BY, its Y The size of the direction exposure position error is two cursors The scale pitch difference (0.1 micron) is m times (meN), as shown in Figure 2D. Therefore, using the design of the present invention can effectively determine the accuracy of pattern alignment after the mask pattern is divided into two exposures. The staff of the Central Government Bureau of the Ministry of Economic Affairs of the People's Republic of China printed the above description to describe the invention in a preferred embodiment, not to limit the invention, and those skilled in semiconductor technology will be able to understand, and make minor changes and adjustments as appropriate. , Still will not lose the gist of the present invention, nor depart from the spirit and scope of the present invention. 9 The scale of this paper is applicable to the Chinese National Standard (CNS) / \ 4 specifications: ： 10X29 \ > «