KR830006824A - 고체촬상소자 - Google Patents

고체촬상소자 Download PDF

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Publication number
KR830006824A
KR830006824A KR1019810002916A KR810002916A KR830006824A KR 830006824 A KR830006824 A KR 830006824A KR 1019810002916 A KR1019810002916 A KR 1019810002916A KR 810002916 A KR810002916 A KR 810002916A KR 830006824 A KR830006824 A KR 830006824A
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KR
South Korea
Prior art keywords
field effect
effect transistor
electrode
photoelectric conversion
solid
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KR1019810002916A
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English (en)
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KR860000073B1 (ko
Inventor
도오루 바지
도시히사 쓰까다
노리오 고이께
도시유끼 아끼야마
이와오 다께모도
시게루 시마다
츄우시로오 구사노
신야 오오바
하루오 마쓰마루
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미다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Publication of KR830006824A publication Critical patent/KR830006824A/ko
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Publication of KR860000073B1 publication Critical patent/KR860000073B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

고체촬상소자(固體撮像素子)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본원 발명의 고체촬상소자의 예의 등가회로를 나타낸 도면.
제4도는 그 소자의 동작타이밍차아트를 나타낸 도면.

Claims (6)

  1. 도면에 표시하고 본문에 상술한 바와같이 화소에 대응하는 광전변환요소와 제1, 제2, 제3의 전계효과 트랜지스터를 최소한 가지며, 상기 광전변환요소의 제1의 전극은 상기 제2의 전극은 상기 제2의 전계효과 트랜지스터의 게이트전극에 접속되며, 이 제2의 전계효과 트랜지스터의 소오스전극은 상기 제1의 전계효과 트랜지스터의 드레인전극에 접속되며, 제2의 전계효과 트랜지스터의 드레인전극은 접지 또는 전원에 접속되고, 제3의 전계효과 트랜지스터의 드레인전극은 제2의 전계효과 트랜지스터의 게이트전극에 접속되고, 이 제3의 전계효과 트랜지스터의 소오스전극은 접지 또는 전원에 접속되도록 구성한 화소에 대응한 고체소자를 동인 반도체기판에 2차원으로 배치하고 이 2차원배치에 있어서, 제1의 전계효과 트랜지스터의 게이트전극을 소정수마다 공통접속하여 제1의 선택선으로 하고, 제1의 전계효과 트랜지스터의 소오스전극을 공통접속해서 제2의 선택선으로 하고, 제3의 전계효과 트랜지스터의 게이트전극을 리세트제어용 전원에 접속되도록 구성된 광전변환고체소자군을 갖는 것을 특징으로하는 고체촬상소자.
  2. 상기 광전변환요소는 반도체기판 중에 설치한 이 반도체기판과 역도전형의 불순물영역으로 형성되는 것을 특징으로하는 특허청구의 범위 1기재의 고체촬상소자.
  3. 상기광전변환요소는 반도체기판에 설치된 전극과, 이 상부에 설치된 광도전체총과, 이 광도전체층의 상부에 설치된 투면전극을 갖는 것을 특징으로하는 특허청구의 범위 1기재의 고체촬상소자.
  4. 상기 제1의 전계효과 트랜지스터의 게이트전극을 제2의 전계효과 트랜지스터의 드레인에 접속시킨것을 특징으로 하는 특허청구의 범위 1∼3기재의 고체촬상소자.
  5. 상기 제3의 전계효과 트랜지스터의 게이트전극을, 소정수마다 소자군(素子群)으로 나누어진 광전변환 소자군중의 다음에 주사를 행하게하는 광전변환소자군에 있어서의 제1의 전계효과트랜지스터의 게이트전극에 접속하는 것을 특징으로하는 특허청구의 범위 1∼4기재의 고체촬상소자.
  6. 상기 제3의 전계효과 트랜지스터의 드렌인전극을 제2의 전계효과 트랜지스터의 드레인전극에, 제3의 전계효과 트랜지스터의 소오스 전극을 제2의 전계효과 트랜지스터의 게이트전극에 접속시킨 것을 특징으로 하는 특허청구의 범위 1∼4기재의 고체촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810002916A 1980-08-20 1981-08-11 고체촬상소자(固體撮像素子) KR860000073B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11351180A JPS5738073A (en) 1980-08-20 1980-08-20 Solid-state image sensor
JP80-1135111 1980-08-20

Publications (2)

Publication Number Publication Date
KR830006824A true KR830006824A (ko) 1983-10-06
KR860000073B1 KR860000073B1 (ko) 1986-02-06

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Country Link
US (1) US4407010A (ko)
EP (1) EP0046396B1 (ko)
JP (1) JPS5738073A (ko)
KR (1) KR860000073B1 (ko)
CA (1) CA1162280A (ko)
DE (1) DE3171574D1 (ko)

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Also Published As

Publication number Publication date
KR860000073B1 (ko) 1986-02-06
US4407010A (en) 1983-09-27
JPH0245395B2 (ko) 1990-10-09
EP0046396A1 (en) 1982-02-24
JPS5738073A (en) 1982-03-02
CA1162280A (en) 1984-02-14
DE3171574D1 (en) 1985-09-05
EP0046396B1 (en) 1985-07-31

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