GB1345698A - Photosensitive detecotrs - Google Patents

Photosensitive detecotrs

Info

Publication number
GB1345698A
GB1345698A GB1345698DA GB1345698A GB 1345698 A GB1345698 A GB 1345698A GB 1345698D A GB1345698D A GB 1345698DA GB 1345698 A GB1345698 A GB 1345698A
Authority
GB
Grant status
Application
Patent type
Prior art keywords
photo
array
output
shown
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Integrated Photomatrix Ltd
Original Assignee
Integrated Photomatrix Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/374Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/3692Line sensors

Abstract

1345698 Photo-sensitive array circuit INTEGRATED PHOTOMATRIX Ltd 12 Oct 1971 40611/70 Heading G1A In a photo-sensitive array circuit, for detecting local variations in brightness, comprising an array of sub-circuits connected in parallel, each sub-circuit comprises a photo-diode 11, a MOST M1 (Metal oxide silicon transistor) which acts as a gate and a further MOST M2 which acts as an amplifier, the elements being connected to supply rails 12 and 13 and to a negative pulse input rail 15 and an output rail 14 as shown in Fig.1. This sub-circuit is repeated Fig. 2 (not shown) to form the desired array and the circuit is preferably of integrated circuit form. In operation a series of negative (See top waveform Fig.3) are applied to the terminal of rail 15. Each negative pulse recharges all the photodiodes via each MOST M1, to a predetermined reverse bias voltage and, on removing the pulse, the potential on each diode rises independently of the other diodes in the array as charge is lost via reverse bias leakage current (See bottom waveform Fig.3), each amplifying MOST M2 isolating each photo-diode. The rate of discharge depending upon the degree of illumination of the photo-diode concerned. All the outputs of the amplifying MOST's are fed to the output rail 14 which has a resistance R1 Fig. 2 (not shown) connected between it and earth and the final output potential appearing across R1 is determined by the diode which has undergone the least illumination. In a further embodiment Fig. 4 (not shown) the input and output rails are combined. In another embodiment Fig. 6 (not shown) an additional photo-sensitive element is added to the array of circuits, and it is connected in a circuit similar to Fig.1. The additional photosensitive element is physically located in the array of photo-diodes Fig. 7 (not shown) so as to provide an output representative of the mean illumination of the photo-diodes and this output may then be compared with the main output from the diodes 11.
GB1345698A 1970-08-24 1970-08-24 Photosensitive detecotrs Expired GB1345698A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4061170 1970-08-24

Publications (1)

Publication Number Publication Date
GB1345698A true true GB1345698A (en) 1974-01-30

Family

ID=10415749

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1345698A Expired GB1345698A (en) 1970-08-24 1970-08-24 Photosensitive detecotrs

Country Status (1)

Country Link
GB (1) GB1345698A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046396A1 (en) * 1980-08-20 1982-02-24 Hitachi, Ltd. Solid state image pickup device
GB2144265A (en) * 1983-07-28 1985-02-27 Mitsubishi Electric Corp Solid-state image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046396A1 (en) * 1980-08-20 1982-02-24 Hitachi, Ltd. Solid state image pickup device
GB2144265A (en) * 1983-07-28 1985-02-27 Mitsubishi Electric Corp Solid-state image sensor

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee