DE3171574D1 - Solid state image pickup device - Google Patents
Solid state image pickup deviceInfo
- Publication number
- DE3171574D1 DE3171574D1 DE8181303733T DE3171574T DE3171574D1 DE 3171574 D1 DE3171574 D1 DE 3171574D1 DE 8181303733 T DE8181303733 T DE 8181303733T DE 3171574 T DE3171574 T DE 3171574T DE 3171574 D1 DE3171574 D1 DE 3171574D1
- Authority
- DE
- Germany
- Prior art keywords
- image pickup
- solid state
- pickup device
- state image
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11351180A JPS5738073A (en) | 1980-08-20 | 1980-08-20 | Solid-state image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3171574D1 true DE3171574D1 (en) | 1985-09-05 |
Family
ID=14614182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181303733T Expired DE3171574D1 (en) | 1980-08-20 | 1981-08-17 | Solid state image pickup device |
Country Status (6)
Country | Link |
---|---|
US (1) | US4407010A (de) |
EP (1) | EP0046396B1 (de) |
JP (1) | JPS5738073A (de) |
KR (1) | KR860000073B1 (de) |
CA (1) | CA1162280A (de) |
DE (1) | DE3171574D1 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202180A (en) * | 1981-06-05 | 1982-12-10 | Hitachi Ltd | Solid-state image pickup device |
JPS5813079A (ja) * | 1981-07-16 | 1983-01-25 | Olympus Optical Co Ltd | イメ−ジセンサ |
JPS58169965A (ja) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | 固体撮像装置 |
JPS58172057A (ja) * | 1982-04-02 | 1983-10-08 | Hitachi Ltd | 光学読取装置 |
DE3236146A1 (de) * | 1982-09-29 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb |
DE3236073A1 (de) * | 1982-09-29 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit einer anordnung zur reduzierung des ueberstrahlens |
FR2536188B1 (fr) * | 1982-11-17 | 1987-10-23 | Commissariat Energie Atomique | Dispositif de lecture de document point par point utilisant une matrice d'elements photodetecteurs |
JPS6030282A (ja) * | 1983-07-28 | 1985-02-15 | Mitsubishi Electric Corp | 固体撮像装置 |
JPS6043857A (ja) * | 1983-08-20 | 1985-03-08 | Mitsubishi Electric Corp | 固体撮像装置とその製造方法 |
JPS60130975A (ja) * | 1983-12-19 | 1985-07-12 | Olympus Optical Co Ltd | 超音波撮像素子 |
FR2582844A2 (fr) * | 1984-04-17 | 1986-12-05 | Bergher Laurent | Dispositif de formation et de memorisation d'images a semi-conducteur |
US4794443A (en) * | 1984-05-28 | 1988-12-27 | Canon Kabushiki Kaisha | Semiconductor device and process for producing same |
JPS6170869A (ja) * | 1984-09-14 | 1986-04-11 | Fuji Photo Film Co Ltd | 固体撮像装置および固体光センサ装置 |
JPS6182585A (ja) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | イメ−ジセンサ |
US4633092A (en) * | 1984-11-13 | 1986-12-30 | Eastman Kodak Company | Light sensing device |
JPH0646655B2 (ja) * | 1985-04-01 | 1994-06-15 | キヤノン株式会社 | 固体撮像装置 |
EP0207517B1 (de) * | 1985-07-05 | 1991-02-27 | Mitsubishi Denki Kabushiki Kaisha | Optischer Signalabnehmer |
US5771070A (en) * | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
US4905265A (en) * | 1985-12-11 | 1990-02-27 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
FR2593319B1 (fr) * | 1986-01-17 | 1988-03-25 | Thomson Csf | Procede de lecture d'element photosensible constitue d'une photodiode et d'une capacite |
US4737854A (en) * | 1986-07-18 | 1988-04-12 | Xerox Corporation | Image sensor array with two stage transfer |
US4734776A (en) * | 1986-08-15 | 1988-03-29 | General Electric Company | Readout circuit for an optical sensing charge injection device facilitating an extended dynamic range |
DE3856165T2 (de) * | 1987-01-29 | 1998-08-27 | Canon Kk | Photovoltaischer Wandler |
JP2564133B2 (ja) * | 1987-04-17 | 1996-12-18 | オリンパス光学工業株式会社 | 固体撮像装置 |
FR2626127B1 (fr) * | 1988-01-15 | 1990-05-04 | Thomson Csf | Matrice photosensible a trois diodes par point, sans remise a niveau |
US4843473A (en) * | 1988-03-21 | 1989-06-27 | Polaroid Corporation | Charge injection device with low noise readout |
US5245203A (en) * | 1988-06-06 | 1993-09-14 | Canon Kabushiki Kaisha | Photoelectric converter with plural regions |
FR2638286B1 (fr) * | 1988-10-25 | 1990-12-07 | Thomson Csf | Dispositif photosensible du type a amplification du signal au niveau des points photosensibles |
WO1991004633A1 (en) * | 1989-09-23 | 1991-04-04 | Vlsi Vision Limited | I.c. sensor |
US5115293A (en) * | 1989-12-11 | 1992-05-19 | Fuji Photo Film Co., Ltd. | Solid-state imaging device |
US5153420A (en) * | 1990-11-28 | 1992-10-06 | Xerox Corporation | Timing independent pixel-scale light sensing apparatus |
US5289286A (en) * | 1991-07-18 | 1994-02-22 | Minolta Camera Kabushiki Kaisha | Solid state sensor having logarithmic photovoltaic response, with pixel uniformity correction and white balance circuitry therefor |
US5596200A (en) * | 1992-10-14 | 1997-01-21 | Primex | Low dose mammography system |
US5336879A (en) | 1993-05-28 | 1994-08-09 | David Sarnoff Research Center, Inc. | Pixel array having image forming pixel elements integral with peripheral circuit elements |
US5471515A (en) * | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US6486503B1 (en) * | 1994-01-28 | 2002-11-26 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
JP2953297B2 (ja) * | 1994-03-30 | 1999-09-27 | 日本電気株式会社 | 受光素子およびその駆動方法 |
JPH10500823A (ja) * | 1994-05-19 | 1998-01-20 | ポラロイド コーポレイション | アクティブ画素を有するcmos撮像アレイ |
US5563429A (en) * | 1994-06-14 | 1996-10-08 | Nikon Corp. | Solid state imaging device |
US5708263A (en) * | 1995-12-27 | 1998-01-13 | International Business Machines Corporation | Photodetector array |
US5923794A (en) * | 1996-02-06 | 1999-07-13 | Polaroid Corporation | Current-mediated active-pixel image sensing device with current reset |
US5818052A (en) * | 1996-04-18 | 1998-10-06 | Loral Fairchild Corp. | Low light level solid state image sensor |
US5831258A (en) * | 1996-08-20 | 1998-11-03 | Xerox Corporation | Pixel circuit with integrated amplifer |
US6697108B1 (en) | 1997-12-31 | 2004-02-24 | Texas Instruments Incorporated | Fast frame readout architecture for array sensors with integrated correlated double sampling system |
EP0928101A3 (de) * | 1997-12-31 | 2001-05-02 | Texas Instruments Incorporated | CMOS-Matrixsensoren |
EP0928102B1 (de) * | 1997-12-31 | 2004-06-09 | Texas Instruments Incorporated | Matrixsensoren |
US6005238A (en) * | 1998-04-28 | 1999-12-21 | Xerox Corporation | Hybrid sensor pixel architecture with linearization circuit |
US6051827A (en) * | 1998-04-28 | 2000-04-18 | Xerox Corporation | Hybrid sensor pixel architecture with threshold response |
US6140668A (en) * | 1998-04-28 | 2000-10-31 | Xerox Corporation | Silicon structures having an absorption layer |
US6252215B1 (en) | 1998-04-28 | 2001-06-26 | Xerox Corporation | Hybrid sensor pixel architecture with gate line and drive line synchronization |
US6031248A (en) * | 1998-04-28 | 2000-02-29 | Xerox Corporation | Hybrid sensor pixel architecture |
US6504175B1 (en) | 1998-04-28 | 2003-01-07 | Xerox Corporation | Hybrid polycrystalline and amorphous silicon structures on a shared substrate |
FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
US6740915B1 (en) * | 1998-11-12 | 2004-05-25 | Micron Technology, Inc. | CMOS imager cell having a buried contact |
FR2820883B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
FR2820882B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
FR2824665B1 (fr) * | 2001-05-09 | 2004-07-23 | St Microelectronics Sa | Photodetecteur de type cmos |
JP2003309130A (ja) * | 2002-04-17 | 2003-10-31 | Sanyo Electric Co Ltd | 半導体スイッチ回路装置 |
JP2004311801A (ja) * | 2003-04-09 | 2004-11-04 | Sharp Corp | 半導体受光装置及びその製造方法 |
US7242430B2 (en) * | 2004-11-03 | 2007-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | High dynamic range image sensor cell |
CN104520993B (zh) * | 2012-08-09 | 2017-07-28 | 松下知识产权经营株式会社 | 固体摄像装置 |
CN209911984U (zh) * | 2017-12-18 | 2020-01-07 | 深圳市汇顶科技股份有限公司 | 一种电流采样保持电路及传感器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1345698A (en) * | 1970-08-24 | 1974-01-30 | Integrated Photomatrix Ltd | Photosensitive detecotrs |
US3715485A (en) * | 1971-10-12 | 1973-02-06 | Rca Corp | Radiation sensing and signal transfer circuits |
JPS50134393A (de) * | 1974-04-10 | 1975-10-24 | ||
GB2008889B (en) * | 1977-11-07 | 1982-08-04 | Hitachi Ltd | Solid state image pickup device |
JPS54152665U (de) * | 1978-04-17 | 1979-10-24 | ||
JPS55105480A (en) * | 1979-02-07 | 1980-08-13 | Hitachi Ltd | Solid state pickup device |
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
FR2469805A1 (fr) * | 1979-11-09 | 1981-05-22 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
-
1980
- 1980-08-20 JP JP11351180A patent/JPS5738073A/ja active Granted
-
1981
- 1981-08-06 US US06/290,570 patent/US4407010A/en not_active Expired - Lifetime
- 1981-08-11 KR KR1019810002916A patent/KR860000073B1/ko active
- 1981-08-17 DE DE8181303733T patent/DE3171574D1/de not_active Expired
- 1981-08-17 EP EP81303733A patent/EP0046396B1/de not_active Expired
- 1981-08-18 CA CA000384144A patent/CA1162280A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4407010A (en) | 1983-09-27 |
JPH0245395B2 (de) | 1990-10-09 |
JPS5738073A (en) | 1982-03-02 |
EP0046396A1 (de) | 1982-02-24 |
KR860000073B1 (ko) | 1986-02-06 |
EP0046396B1 (de) | 1985-07-31 |
KR830006824A (ko) | 1983-10-06 |
CA1162280A (en) | 1984-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3171574D1 (en) | Solid state image pickup device | |
GB8332366D0 (en) | Solid state image pick-up device | |
GB2112603B (en) | Solid state image pick-up devices | |
JPS567579A (en) | Image pickup device | |
JPS56138371A (en) | Solid state image pickup camera | |
GB2100952B (en) | Image pickup apparatus | |
JPS57100573A (en) | Camera device | |
GB2070383B (en) | Image recording device | |
GB2134349B (en) | Image pickup device | |
GB8320799D0 (en) | Solid state image pickup devices | |
GB8334199D0 (en) | Optical pickup device | |
JPS56140658A (en) | Solid state color imaging device | |
GB2069237B (en) | Solid state image-sensing device | |
EP0148642A3 (en) | Slid-state image pickup device | |
GB2082349B (en) | An image forming device | |
GB2083315B (en) | Color image pickup device | |
DE3172559D1 (en) | Solid-state imaging device | |
DE3279119D1 (en) | Solid state image pickup device | |
DE3170200D1 (en) | Solid-state imaging device | |
GB2008889B (en) | Solid state image pickup device | |
DE3171759D1 (en) | Solid-state imaging device | |
DE3378174D1 (en) | Solid-state image pickup device | |
DE3272458D1 (en) | Solid state image pickup device | |
JPS57180275A (en) | Television image pickup device | |
EP0083376A4 (de) | Festkörper-bildaufnahmeeinrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |