KR830002397A - 전류교체가 가능한 비소멸성 반도체 기억장치 - Google Patents

전류교체가 가능한 비소멸성 반도체 기억장치 Download PDF

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Publication number
KR830002397A
KR830002397A KR1019800000255A KR800000255A KR830002397A KR 830002397 A KR830002397 A KR 830002397A KR 1019800000255 A KR1019800000255 A KR 1019800000255A KR 800000255 A KR800000255 A KR 800000255A KR 830002397 A KR830002397 A KR 830002397A
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moving gate
bias electrode
electrode
semiconductor memory
replace current
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KR1019800000255A
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KR830001453B1 (ko
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티이 심코우 리챠아드
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윌리스 에드워드 촙
자이크 인코포레이팃드
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903FET configuration adapted for use as static memory cell

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

전류교체가 가능한 비소멸성 반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 전기적으로 프로그래밍이되는 비소멸성 이동 것이트 기억 세편(細片)의 평면도.
제2도는 제1도에서 선 2-2를 따라 취한 측단면도.
제3도는 제1도에 있는 자체 조절회로 부분의 단면회로 개략도로서 바이어스 전극, 이동게이트 및 말소/기억 전극 게이트회로 요소를 포함시킨 도면.
제4도는 몇가지 도우핑 레벨용 이동게이트와 바이어스 전극 사이에서 나타나는 전위차의 함수로서 나타낸 커패시턴스 조절장치의 그라프.
제5도는 측방향 터널링(tunneling) 전극구조를 가진 전기적으로 프로그래밍이 되는 비소멸성 이동게이트 기억 세편의 다른예를 예시한 평면도.
제6도는 제5도의 예를 예시한 측단면도.

Claims (1)

  1. 한가지 전도도형식을 가지는 반도체막과 이 반도체막의 표면에 형성시킨 전기절연성의 바이어스전극 및 기질의 것과는 반대되는 전도도 형식을 가지는 바이어스전극, 바이어스전극의 위에 놓이며 용량관계에 있는 전기절연되는 이동게이트의 전도체, 이동게이트에 인접하여 이동게이트에 전자를 도입하는 프로그래밍전극, 이동게이트에 인접하여 이동게이트로부터 전자를 제거하며 바이어스전극과 용량관계에서 위에 놓이는 지우기/축적전극, 바이어스전극을 전기절연시키며 일정한 전위를 부여하는 장치 및 이이동게이트의 전위를 감지하는 장치로 구성된 전기교체가 가능한 비소멸성 반도 체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800000255A 1979-01-24 1980-01-24 서브스트 레이트와 용량 결합된 부동 게이트의 earom기억 소자 KR830001453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US?006030? 1979-01-24
US06/006,030 US4274012A (en) 1979-01-24 1979-01-24 Substrate coupled floating gate memory cell

Publications (2)

Publication Number Publication Date
KR830002397A true KR830002397A (ko) 1983-05-28
KR830001453B1 KR830001453B1 (ko) 1983-07-29

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KR1019800000255A KR830001453B1 (ko) 1979-01-24 1980-01-24 서브스트 레이트와 용량 결합된 부동 게이트의 earom기억 소자

Country Status (13)

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US (2) US4274012A (ko)
JP (1) JPS5599780A (ko)
KR (1) KR830001453B1 (ko)
BE (1) BE881328A (ko)
CA (1) CA1133636A (ko)
DE (1) DE3002493A1 (ko)
FR (1) FR2447611A1 (ko)
GB (1) GB2041645B (ko)
IE (1) IE49130B1 (ko)
IL (1) IL59060A (ko)
IT (1) IT1127576B (ko)
NL (1) NL8000436A (ko)
SE (1) SE8000393L (ko)

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US4274012A (en) 1981-06-16
IL59060A (en) 1982-03-31
IE800004L (en) 1980-07-24
JPS5599780A (en) 1980-07-30
US4300212A (en) 1981-11-10
JPS6252955B2 (ko) 1987-11-07
NL8000436A (nl) 1980-07-28
IT8047668A0 (it) 1980-01-22
SE8000393L (sv) 1980-07-25
BE881328A (fr) 1980-05-16
DE3002493C2 (ko) 1990-12-20
CA1133636A (en) 1982-10-12
DE3002493A1 (de) 1980-08-07
GB2041645B (en) 1983-03-09
KR830001453B1 (ko) 1983-07-29
IT1127576B (it) 1986-05-21
IE49130B1 (en) 1985-08-07
GB2041645A (en) 1980-09-10
FR2447611A1 (fr) 1980-08-22
FR2447611B1 (ko) 1985-03-22
IL59060A0 (en) 1980-03-31

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