KR830002397A - 전류교체가 가능한 비소멸성 반도체 기억장치 - Google Patents
전류교체가 가능한 비소멸성 반도체 기억장치 Download PDFInfo
- Publication number
- KR830002397A KR830002397A KR1019800000255A KR800000255A KR830002397A KR 830002397 A KR830002397 A KR 830002397A KR 1019800000255 A KR1019800000255 A KR 1019800000255A KR 800000255 A KR800000255 A KR 800000255A KR 830002397 A KR830002397 A KR 830002397A
- Authority
- KR
- South Korea
- Prior art keywords
- moving gate
- bias electrode
- electrode
- semiconductor memory
- replace current
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 4
- 239000004020 conductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000001066 destructive effect Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 전기적으로 프로그래밍이되는 비소멸성 이동 것이트 기억 세편(細片)의 평면도.
제2도는 제1도에서 선 2-2를 따라 취한 측단면도.
제3도는 제1도에 있는 자체 조절회로 부분의 단면회로 개략도로서 바이어스 전극, 이동게이트 및 말소/기억 전극 게이트회로 요소를 포함시킨 도면.
제4도는 몇가지 도우핑 레벨용 이동게이트와 바이어스 전극 사이에서 나타나는 전위차의 함수로서 나타낸 커패시턴스 조절장치의 그라프.
제5도는 측방향 터널링(tunneling) 전극구조를 가진 전기적으로 프로그래밍이 되는 비소멸성 이동게이트 기억 세편의 다른예를 예시한 평면도.
제6도는 제5도의 예를 예시한 측단면도.
Claims (1)
- 한가지 전도도형식을 가지는 반도체막과 이 반도체막의 표면에 형성시킨 전기절연성의 바이어스전극 및 기질의 것과는 반대되는 전도도 형식을 가지는 바이어스전극, 바이어스전극의 위에 놓이며 용량관계에 있는 전기절연되는 이동게이트의 전도체, 이동게이트에 인접하여 이동게이트에 전자를 도입하는 프로그래밍전극, 이동게이트에 인접하여 이동게이트로부터 전자를 제거하며 바이어스전극과 용량관계에서 위에 놓이는 지우기/축적전극, 바이어스전극을 전기절연시키며 일정한 전위를 부여하는 장치 및 이이동게이트의 전위를 감지하는 장치로 구성된 전기교체가 가능한 비소멸성 반도 체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US?006030? | 1979-01-24 | ||
US06/006,030 US4274012A (en) | 1979-01-24 | 1979-01-24 | Substrate coupled floating gate memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830002397A true KR830002397A (ko) | 1983-05-28 |
KR830001453B1 KR830001453B1 (ko) | 1983-07-29 |
Family
ID=21718946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019800000255A KR830001453B1 (ko) | 1979-01-24 | 1980-01-24 | 서브스트 레이트와 용량 결합된 부동 게이트의 earom기억 소자 |
Country Status (13)
Country | Link |
---|---|
US (2) | US4274012A (ko) |
JP (1) | JPS5599780A (ko) |
KR (1) | KR830001453B1 (ko) |
BE (1) | BE881328A (ko) |
CA (1) | CA1133636A (ko) |
DE (1) | DE3002493A1 (ko) |
FR (1) | FR2447611A1 (ko) |
GB (1) | GB2041645B (ko) |
IE (1) | IE49130B1 (ko) |
IL (1) | IL59060A (ko) |
IT (1) | IT1127576B (ko) |
NL (1) | NL8000436A (ko) |
SE (1) | SE8000393L (ko) |
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US3800297A (en) * | 1972-06-03 | 1974-03-26 | Gen Electric | Non-volatile associative memory |
US4037242A (en) * | 1975-12-29 | 1977-07-19 | Texas Instruments Incorporated | Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device |
US4119995A (en) * | 1976-08-23 | 1978-10-10 | Intel Corporation | Electrically programmable and electrically erasable MOS memory cell |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
-
1979
- 1979-01-24 US US06/006,030 patent/US4274012A/en not_active Expired - Lifetime
- 1979-01-24 US US06/006,029 patent/US4300212A/en not_active Expired - Lifetime
- 1979-12-31 IL IL59060A patent/IL59060A/xx unknown
-
1980
- 1980-01-02 IE IE4/80A patent/IE49130B1/en unknown
- 1980-01-07 GB GB8000399A patent/GB2041645B/en not_active Expired
- 1980-01-17 SE SE8000393A patent/SE8000393L/xx not_active Application Discontinuation
- 1980-01-22 IT IT47668/80A patent/IT1127576B/it active
- 1980-01-23 NL NL8000436A patent/NL8000436A/nl not_active Application Discontinuation
- 1980-01-23 FR FR8001398A patent/FR2447611A1/fr active Granted
- 1980-01-24 DE DE19803002493 patent/DE3002493A1/de active Granted
- 1980-01-24 CA CA344,354A patent/CA1133636A/en not_active Expired
- 1980-01-24 BE BE0/199092A patent/BE881328A/fr not_active IP Right Cessation
- 1980-01-24 KR KR1019800000255A patent/KR830001453B1/ko active
- 1980-01-24 JP JP739080A patent/JPS5599780A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
US4274012A (en) | 1981-06-16 |
IL59060A (en) | 1982-03-31 |
IE800004L (en) | 1980-07-24 |
JPS5599780A (en) | 1980-07-30 |
US4300212A (en) | 1981-11-10 |
JPS6252955B2 (ko) | 1987-11-07 |
NL8000436A (nl) | 1980-07-28 |
IT8047668A0 (it) | 1980-01-22 |
SE8000393L (sv) | 1980-07-25 |
BE881328A (fr) | 1980-05-16 |
DE3002493C2 (ko) | 1990-12-20 |
CA1133636A (en) | 1982-10-12 |
DE3002493A1 (de) | 1980-08-07 |
GB2041645B (en) | 1983-03-09 |
KR830001453B1 (ko) | 1983-07-29 |
IT1127576B (it) | 1986-05-21 |
IE49130B1 (en) | 1985-08-07 |
GB2041645A (en) | 1980-09-10 |
FR2447611A1 (fr) | 1980-08-22 |
FR2447611B1 (ko) | 1985-03-22 |
IL59060A0 (en) | 1980-03-31 |
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