IT1236980B - Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta - Google Patents

Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta

Info

Publication number
IT1236980B
IT1236980B IT02284489A IT2284489A IT1236980B IT 1236980 B IT1236980 B IT 1236980B IT 02284489 A IT02284489 A IT 02284489A IT 2284489 A IT2284489 A IT 2284489A IT 1236980 B IT1236980 B IT 1236980B
Authority
IT
Italy
Prior art keywords
self
obtaining
eprom memory
memory cell
cell
Prior art date
Application number
IT02284489A
Other languages
English (en)
Other versions
IT8922844A1 (it
IT8922844A0 (it
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT02284489A priority Critical patent/IT1236980B/it
Publication of IT8922844A0 publication Critical patent/IT8922844A0/it
Priority to DE69017863T priority patent/DE69017863T2/de
Priority to EP90203252A priority patent/EP0434121B1/en
Priority to US07/631,008 priority patent/US5241499A/en
Priority to JP2405095A priority patent/JP2824702B2/ja
Publication of IT8922844A1 publication Critical patent/IT8922844A1/it
Application granted granted Critical
Publication of IT1236980B publication Critical patent/IT1236980B/it
Priority to US08/077,934 priority patent/US5330938A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT02284489A 1989-12-22 1989-12-22 Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta IT1236980B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT02284489A IT1236980B (it) 1989-12-22 1989-12-22 Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta
DE69017863T DE69017863T2 (de) 1989-12-22 1990-12-11 Nichtflüchtige EPROM-Speicherzelle mit geteiltem Gate und selbstausrichtendes Feldisolierungsverfahren zur Herstellung.
EP90203252A EP0434121B1 (en) 1989-12-22 1990-12-11 Non-volatile split gate EPROM memory cell and self-aligned field insulation process for obtaining the above cell
US07/631,008 US5241499A (en) 1989-12-22 1990-12-19 Non-volatile split gate eprom memory cell and self-aligned field insulation process for obtaining the above cell
JP2405095A JP2824702B2 (ja) 1989-12-22 1990-12-21 不揮発性分割ゲートｅｐｒｏｍ記憶セル及びこのセルを得るための自己整合フィールド絶縁法
US08/077,934 US5330938A (en) 1989-12-22 1993-06-18 Method of making non-volatile split gate EPROM memory cell and self-aligned field insulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02284489A IT1236980B (it) 1989-12-22 1989-12-22 Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta

Publications (3)

Publication Number Publication Date
IT8922844A0 IT8922844A0 (it) 1989-12-22
IT8922844A1 IT8922844A1 (it) 1991-06-22
IT1236980B true IT1236980B (it) 1993-05-12

Family

ID=11201080

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02284489A IT1236980B (it) 1989-12-22 1989-12-22 Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta

Country Status (5)

Country Link
US (2) US5241499A (it)
EP (1) EP0434121B1 (it)
JP (1) JP2824702B2 (it)
DE (1) DE69017863T2 (it)
IT (1) IT1236980B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477068A (en) * 1992-03-18 1995-12-19 Rohm Co., Ltd. Nonvolatile semiconductor memory device
US5231299A (en) * 1992-03-24 1993-07-27 International Business Machines Corporation Structure and fabrication method for EEPROM memory cell with selective channel implants
US5508955A (en) * 1993-05-20 1996-04-16 Nexcom Technology, Inc. Electronically erasable-programmable memory cell having buried bit line
EP0694211B1 (en) * 1994-02-17 2001-06-20 National Semiconductor Corporation A method for reducing the spacing between the horizontally-adjacent floating gates of a flash eprom array
US5409854A (en) * 1994-03-15 1995-04-25 National Semiconductor Corporation Method for forming a virtual-ground flash EPROM array with floating gates that are self aligned to the field oxide regions of the array
US5604141A (en) * 1994-03-15 1997-02-18 National Semiconductor Corporation Method for forming virtual-ground flash EPROM array with reduced cell pitch in the X direction
US5429969A (en) * 1994-05-31 1995-07-04 Motorola, Inc. Process for forming electrically programmable read-only memory cell with a merged select/control gate
US5712177A (en) * 1994-08-01 1998-01-27 Motorola, Inc. Method for forming a reverse dielectric stack
US5466624A (en) * 1994-09-30 1995-11-14 Intel Corporation Isolation between diffusion lines in a memory array
US5445984A (en) * 1994-11-28 1995-08-29 United Microelectronics Corporation Method of making a split gate flash memory cell
US5597751A (en) * 1995-12-20 1997-01-28 Winbond Electronics Corp. Single-side oxide sealed salicide process for EPROMs
US5714412A (en) * 1996-12-02 1998-02-03 Taiwan Semiconductor Manufacturing Company, Ltd Multi-level, split-gate, flash memory cell and method of manufacture thereof
DE69637095D1 (de) 1996-12-24 2007-07-05 St Microelectronics Srl Selbstjustiertes Ätzverfahren zur verwirklichung der Wortleitungen integrierter Halbleiterspeicherbauelemente
US5783473A (en) * 1997-01-06 1998-07-21 Mosel Vitelic, Inc. Structure and manufacturing process of a split gate flash memory unit
DE69731625D1 (de) * 1997-08-08 2004-12-23 St Microelectronics Srl Herstellungsprozess von Kreuzpunktspeicherbauelementen mit Zellen, die einen zur Bitleitung und zum Feldoxyd selbstjustierten Source-Kanal aufweisen
US6093607A (en) * 1998-01-09 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash
US6087695A (en) * 1999-08-20 2000-07-11 Worldwide Semiconductor Mfg Source side injection flash EEPROM memory cell with dielectric pillar and operation
DE10008002C2 (de) * 2000-02-22 2003-04-10 X Fab Semiconductor Foundries Split-gate-Flash-Speicherelement, Anordnung von Split-gate-Flash-Speicherelementen und Methode zum Löschen derselben
US6403494B1 (en) 2000-08-14 2002-06-11 Taiwan Semiconductor Manufacturing Company Method of forming a floating gate self-aligned to STI on EEPROM
US6297099B1 (en) 2001-01-19 2001-10-02 Taiwan Semiconductor Manufacturing Company Method to free control tunneling oxide thickness on poly tip of flash
US7078349B2 (en) * 2003-07-31 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method to form self-aligned floating gate to diffusion structures in flash
KR100525005B1 (ko) * 2004-05-06 2005-10-31 삼성전자주식회사 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조방법
KR100663344B1 (ko) * 2004-06-17 2007-01-02 삼성전자주식회사 적어도 두 개의 다른 채널농도를 갖는 비휘발성 플래시메모리 소자 및 그 제조방법
CN108109966B (zh) * 2018-01-30 2021-09-17 德淮半导体有限公司 静态随机存取存储器及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59702B2 (ja) * 1978-10-18 1984-01-07 トヨタ自動車株式会社 燃料噴射式内燃機関の吸気装置
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
JPS5713772A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device and manufacture thereof
EP0052982B1 (en) * 1980-11-20 1986-08-13 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
JPS5892869A (ja) * 1981-11-27 1983-06-02 Hitachi Ltd 配線パターンの欠陥判定方法およびその装置
JPS58206165A (ja) * 1982-05-26 1983-12-01 Toshiba Corp 不揮発性半導体メモリ装置
JPS62229982A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体記憶装置
GB2200795B (en) * 1987-02-02 1990-10-03 Intel Corp Eprom cell with integral select transistor
US4785375A (en) * 1987-06-11 1988-11-15 Tam Ceramics, Inc. Temperature stable dielectric composition at high and low frequencies
FR2626401B1 (fr) * 1988-01-26 1990-05-18 Sgs Thomson Microelectronics Memoire eeprom a grille flottante avec transistor de selection de ligne de source
JP2844475B2 (ja) * 1989-07-21 1999-01-06 セイコーインスツルメンツ株式会社 半導体不揮発性メモリ
IT1235690B (it) * 1989-04-07 1992-09-21 Sgs Thomson Microelectronics Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia.
JPH02295169A (ja) * 1989-05-09 1990-12-06 Nec Corp 不揮発性半導体記憶装置
JPH088313B2 (ja) * 1989-07-25 1996-01-29 株式会社東芝 不揮発性半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
IT8922844A1 (it) 1991-06-22
DE69017863D1 (de) 1995-04-20
DE69017863T2 (de) 1995-08-03
EP0434121B1 (en) 1995-03-15
US5241499A (en) 1993-08-31
IT8922844A0 (it) 1989-12-22
JP2824702B2 (ja) 1998-11-18
US5330938A (en) 1994-07-19
EP0434121A1 (en) 1991-06-26
JPH0536986A (ja) 1993-02-12

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227