KR910010628A - 자기정열 슬로핑 폴리실리콘 소오스/드레인 셀 제조방법 - Google Patents
자기정열 슬로핑 폴리실리콘 소오스/드레인 셀 제조방법Info
- Publication number
- KR910010628A KR910010628A KR1019890016747A KR890016747A KR910010628A KR 910010628 A KR910010628 A KR 910010628A KR 1019890016747 A KR1019890016747 A KR 1019890016747A KR 890016747 A KR890016747 A KR 890016747A KR 910010628 A KR910010628 A KR 910010628A
- Authority
- KR
- South Korea
- Prior art keywords
- self
- cell manufacturing
- drain cell
- polysilicon source
- slope
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890016747A KR0140703B1 (ko) | 1989-11-18 | 1989-11-18 | 자기정열 슬로핑 폴리실리콘 소오스/드레인 셀 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890016747A KR0140703B1 (ko) | 1989-11-18 | 1989-11-18 | 자기정열 슬로핑 폴리실리콘 소오스/드레인 셀 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910010628A true KR910010628A (ko) | 1991-06-29 |
| KR0140703B1 KR0140703B1 (ko) | 1998-07-15 |
Family
ID=19291779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890016747A KR0140703B1 (ko) | 1989-11-18 | 1989-11-18 | 자기정열 슬로핑 폴리실리콘 소오스/드레인 셀 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0140703B1 (ko) |
-
1989
- 1989-11-18 KR KR1019890016747A patent/KR0140703B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0140703B1 (ko) | 1998-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20110222 Year of fee payment: 14 |
|
| LAPS | Lapse due to unpaid annual fee |