KR20250075719A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20250075719A
KR20250075719A KR1020257015227A KR20257015227A KR20250075719A KR 20250075719 A KR20250075719 A KR 20250075719A KR 1020257015227 A KR1020257015227 A KR 1020257015227A KR 20257015227 A KR20257015227 A KR 20257015227A KR 20250075719 A KR20250075719 A KR 20250075719A
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KR
South Korea
Prior art keywords
transistor
film
region
insulating film
circuit
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Pending
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KR1020257015227A
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English (en)
Korean (ko)
Inventor
유타카 시오노이리
고세이 노다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20250075719A publication Critical patent/KR20250075719A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Nonlinear Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Geometry (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020257015227A 2009-10-30 2010-10-06 반도체 장치 Pending KR20250075719A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009250665 2009-10-30
JPJP-P-2009-250665 2009-10-30
KR1020227041631A KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치
PCT/JP2010/067999 WO2011052386A1 (en) 2009-10-30 2010-10-06 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227041631A Division KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Publications (1)

Publication Number Publication Date
KR20250075719A true KR20250075719A (ko) 2025-05-28

Family

ID=43921812

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020257015227A Pending KR20250075719A (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020187036160A Active KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020197037728A Active KR102334468B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020177027911A Active KR101930730B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020127013414A Ceased KR20120091239A (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020227041631A Active KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020217038926A Active KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020187036160A Active KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020197037728A Active KR102334468B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020177027911A Active KR101930730B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020127013414A Ceased KR20120091239A (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020227041631A Active KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020217038926A Active KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Country Status (10)

Country Link
US (4) US20110101333A1 (https=)
EP (1) EP2494595A4 (https=)
JP (9) JP2011119671A (https=)
KR (7) KR20250075719A (https=)
CN (1) CN102640279B (https=)
IN (1) IN2012DN03080A (https=)
MY (1) MY172111A (https=)
SG (3) SG10201406989QA (https=)
TW (2) TWI603458B (https=)
WO (1) WO2011052386A1 (https=)

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CN102656683B (zh) * 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
KR102220018B1 (ko) * 2010-03-08 2021-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
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JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
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CN106129122B (zh) * 2016-08-31 2018-12-11 京东方科技集团股份有限公司 氧化物薄膜晶体管及其制备方法、阵列基板、显示装置
JP6832656B2 (ja) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ 半導体装置の製造方法
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KR102807777B1 (ko) * 2020-12-28 2025-05-14 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN113921048B (zh) * 2021-10-19 2025-03-25 吉林大学 基于二位晶体管存储器的可进行四进制逻辑运算的集成电路
CN114664912B (zh) * 2022-03-28 2025-02-28 深圳市华星光电半导体显示技术有限公司 有机发光二极管显示面板及其制造方法
CN114823327B (zh) * 2022-05-10 2025-09-02 北京燕东微电子科技有限公司 半导体器件的热氧化方法和制造方法
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