KR20220047897A - 표시 장치 - Google Patents

표시 장치 Download PDF

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Publication number
KR20220047897A
KR20220047897A KR1020227011652A KR20227011652A KR20220047897A KR 20220047897 A KR20220047897 A KR 20220047897A KR 1020227011652 A KR1020227011652 A KR 1020227011652A KR 20227011652 A KR20227011652 A KR 20227011652A KR 20220047897 A KR20220047897 A KR 20220047897A
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KR
South Korea
Prior art keywords
oxide semiconductor
film
semiconductor film
transistor
oxide
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Ceased
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KR1020227011652A
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English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
켄이치 오카자키
마사히로 카타야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020237000590A priority Critical patent/KR102705567B1/ko
Publication of KR20220047897A publication Critical patent/KR20220047897A/ko
Ceased legal-status Critical Current

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    • H01L27/1248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H01L27/1225—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Vehicle Body Suspensions (AREA)
KR1020227011652A 2013-12-02 2014-11-24 표시 장치 Ceased KR20220047897A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237000590A KR102705567B1 (ko) 2013-12-02 2014-11-24 표시 장치

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JPJP-P-2013-249692 2013-12-02
JP2013249692 2013-12-02
JPJP-P-2013-249694 2013-12-03
JP2013249693 2013-12-03
JPJP-P-2013-249693 2013-12-03
JP2013249694 2013-12-03
KR1020217017523A KR102386362B1 (ko) 2013-12-02 2014-11-24 표시 장치
PCT/IB2014/066282 WO2015083034A1 (en) 2013-12-02 2014-11-24 Display device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217017523A Division KR102386362B1 (ko) 2013-12-02 2014-11-24 표시 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237000590A Division KR102705567B1 (ko) 2013-12-02 2014-11-24 표시 장치

Publications (1)

Publication Number Publication Date
KR20220047897A true KR20220047897A (ko) 2022-04-19

Family

ID=53265199

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020227011652A Ceased KR20220047897A (ko) 2013-12-02 2014-11-24 표시 장치
KR1020167017384A Active KR102220450B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020217005067A Active KR102264987B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020217017523A Active KR102386362B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020237000590A Active KR102705567B1 (ko) 2013-12-02 2014-11-24 표시 장치

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020167017384A Active KR102220450B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020217005067A Active KR102264987B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020217017523A Active KR102386362B1 (ko) 2013-12-02 2014-11-24 표시 장치
KR1020237000590A Active KR102705567B1 (ko) 2013-12-02 2014-11-24 표시 장치

Country Status (7)

Country Link
US (1) US9825057B2 (https=)
JP (8) JP6393167B2 (https=)
KR (5) KR20220047897A (https=)
CN (2) CN110265482B (https=)
DE (1) DE112014005486B4 (https=)
TW (7) TWI774636B (https=)
WO (1) WO2015083034A1 (https=)

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US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
CN120076406A (zh) * 2015-02-12 2025-05-30 株式会社半导体能源研究所 显示装置
US20160260392A1 (en) * 2015-03-03 2016-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
US10008167B2 (en) * 2015-03-03 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
JP6754763B2 (ja) * 2015-07-03 2020-09-16 株式会社半導体エネルギー研究所 液晶表示装置
WO2017006203A1 (ja) * 2015-07-03 2017-01-12 株式会社半導体エネルギー研究所 液晶表示装置および電子機器
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN114068724A (zh) * 2016-01-29 2022-02-18 株式会社半导体能源研究所 半导体装置以及晶体管
WO2017137869A1 (en) * 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10141387B2 (en) * 2016-04-08 2018-11-27 Innolux Corporation Display device
WO2017178912A1 (en) 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI875538B (zh) 2016-08-29 2025-03-01 日商半導體能源研究所股份有限公司 顯示裝置及控制程式
KR102403389B1 (ko) * 2016-09-12 2022-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN109791950A (zh) * 2016-10-21 2019-05-21 株式会社半导体能源研究所 半导体装置
CN110268529A (zh) 2017-02-16 2019-09-20 三菱电机株式会社 薄膜晶体管、薄膜晶体管基板、液晶显示装置以及薄膜晶体管基板的制造方法
WO2018168639A1 (ja) * 2017-03-14 2018-09-20 シャープ株式会社 半導体装置およびその製造方法
JP2018195632A (ja) * 2017-05-15 2018-12-06 株式会社ジャパンディスプレイ 半導体装置および表示装置
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108010917A (zh) * 2017-11-02 2018-05-08 中华映管股份有限公司 有源器件阵列基板及其制作方法
JP2019114751A (ja) * 2017-12-26 2019-07-11 シャープ株式会社 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法
JP7051446B2 (ja) * 2018-01-10 2022-04-11 株式会社ジャパンディスプレイ 表示装置の製造方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
CN209000913U (zh) * 2018-11-06 2019-06-18 惠科股份有限公司 一种显示面板和显示装置
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
US11430846B2 (en) * 2019-03-19 2022-08-30 Innolux Corporation Display module with transistor
TWM611365U (zh) * 2020-01-22 2021-05-01 台灣愛司帝科技股份有限公司 顯示模組及其影像顯示器
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN111312772B (zh) * 2020-02-25 2022-10-25 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN112768470B (zh) * 2020-12-30 2025-02-28 厦门天马微电子有限公司 一种显示面板及显示装置
CN114188354B (zh) 2021-12-02 2023-11-28 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法和显示面板
KR20250127901A (ko) 2024-02-20 2025-08-27 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시 장치
KR20260007449A (ko) * 2024-07-05 2026-01-14 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
KR20260041203A (ko) * 2024-09-19 2026-03-27 삼성디스플레이 주식회사 표시장치, 그 제조방법, 이를 포함하는 전자장치

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