KR20220002432A - 광 센서 및 센싱 장치 - Google Patents
광 센서 및 센싱 장치 Download PDFInfo
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- KR20220002432A KR20220002432A KR1020217038143A KR20217038143A KR20220002432A KR 20220002432 A KR20220002432 A KR 20220002432A KR 1020217038143 A KR1020217038143 A KR 1020217038143A KR 20217038143 A KR20217038143 A KR 20217038143A KR 20220002432 A KR20220002432 A KR 20220002432A
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- quantum dot
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
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- H01L31/0232—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/193—Infrared image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1433—Quantum dots
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/206—Filters comprising particles embedded in a solid matrix
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
- G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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| JPJP-P-2019-102164 | 2019-05-31 | ||
| JP2019102164 | 2019-05-31 | ||
| PCT/JP2020/020440 WO2020241535A1 (ja) | 2019-05-31 | 2020-05-25 | 光センサおよびセンシング装置 |
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| KR (1) | KR20220002432A (https=) |
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| TWI820822B (zh) * | 2021-08-23 | 2023-11-01 | 天光材料科技股份有限公司 | 光二極體之結構 |
| EP4535432A4 (en) * | 2022-06-01 | 2025-10-29 | Fujifilm Corp | PHOTOSENSING ELEMENT, IMAGE SENSOR AND METHOD FOR MANUFACTURING PHOTOSENSING ELEMENT |
| WO2023234094A1 (ja) | 2022-06-01 | 2023-12-07 | 富士フイルム株式会社 | 光検出素子、イメージセンサおよび光検出素子の製造方法 |
| EP4535047A4 (en) * | 2022-06-01 | 2025-10-08 | Fujifilm Corp | LIGHT DETECTION ELEMENT, IMAGE SENSOR, AND METHOD FOR PRODUCING LIGHT DETECTION ELEMENT |
| EP4407685B1 (en) * | 2023-01-24 | 2025-11-12 | Ludwig-Maximilians-Universität München | Imaging sensor comprising quantum dots, sensor system and method for manufacturing an imaging sensor |
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| WO2017150167A1 (ja) | 2016-02-29 | 2017-09-08 | ソニー株式会社 | 固体撮像素子 |
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| JP6822017B2 (ja) | 2016-09-05 | 2021-01-27 | 東洋インキＳｃホールディングス株式会社 | カラーフィルタ用着色組成物及びカラーフィルタ |
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| JP6824079B2 (ja) | 2017-03-16 | 2021-02-03 | 東洋インキＳｃホールディングス株式会社 | カラーフィルタ用感光性着色組成物およびカラーフィルタ |
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- 2020-05-25 KR KR1020217038143A patent/KR20220002432A/ko not_active Ceased
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- 2020-05-25 EP EP20814093.9A patent/EP3979333A4/en active Pending
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| WO2017150167A1 (ja) | 2016-02-29 | 2017-09-08 | ソニー株式会社 | 固体撮像素子 |
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| JP7309867B2 (ja) | 2023-07-18 |
| EP3979333A4 (en) | 2022-08-17 |
| TW202101781A (zh) | 2021-01-01 |
| EP3979333A1 (en) | 2022-04-06 |
| JPWO2020241535A1 (https=) | 2020-12-03 |
| WO2020241535A1 (ja) | 2020-12-03 |
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