KR20180072867A - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR20180072867A
KR20180072867A KR1020187017618A KR20187017618A KR20180072867A KR 20180072867 A KR20180072867 A KR 20180072867A KR 1020187017618 A KR1020187017618 A KR 1020187017618A KR 20187017618 A KR20187017618 A KR 20187017618A KR 20180072867 A KR20180072867 A KR 20180072867A
Authority
KR
South Korea
Prior art keywords
liquid
substrate
exposure light
space
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187017618A
Other languages
English (en)
Korean (ko)
Inventor
히로유키 나가사카
다케시 오쿠야마
Original Assignee
가부시키가이샤 니콘
가부시키가이샤 니콘 엔지니어링
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘, 가부시키가이샤 니콘 엔지니어링 filed Critical 가부시키가이샤 니콘
Publication of KR20180072867A publication Critical patent/KR20180072867A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H01L21/0274

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020187017618A 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법 Ceased KR20180072867A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2004-172569 2004-06-10
JP2004172569 2004-06-10
JPJP-P-2004-245260 2004-08-25
JP2004245260 2004-08-25
JP2004330582 2004-11-15
JPJP-P-2004-330582 2004-11-15
PCT/JP2005/010576 WO2005122221A1 (ja) 2004-06-10 2005-06-09 露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177001781A Division KR20170010907A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR20180072867A true KR20180072867A (ko) 2018-06-29

Family

ID=35503358

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020187017618A Ceased KR20180072867A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137022569A Expired - Fee Related KR101556454B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127033098A Expired - Fee Related KR101485650B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127006833A Expired - Fee Related KR101310472B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157005498A Expired - Fee Related KR101699965B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147015812A Expired - Fee Related KR101612656B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067022688A Expired - Fee Related KR101178755B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177001781A Ceased KR20170010907A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications After (7)

Application Number Title Priority Date Filing Date
KR1020137022569A Expired - Fee Related KR101556454B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127033098A Expired - Fee Related KR101485650B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127006833A Expired - Fee Related KR101310472B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157005498A Expired - Fee Related KR101699965B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147015812A Expired - Fee Related KR101612656B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067022688A Expired - Fee Related KR101178755B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177001781A Ceased KR20170010907A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (9)

Country Link
US (7) US8482716B2 (https=)
EP (4) EP2624282B1 (https=)
JP (10) JP5295165B2 (https=)
KR (8) KR20180072867A (https=)
CN (1) CN102736446B (https=)
IL (4) IL179787A (https=)
SG (3) SG188877A1 (https=)
TW (6) TW201903538A (https=)
WO (1) WO2005122221A1 (https=)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1660925B1 (en) * 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4973754B2 (ja) * 2004-03-04 2012-07-11 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
EP2624282B1 (en) 2004-06-10 2017-02-08 Nikon Corporation Immersion exposure apparatus and method, and methods for producing a device
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7133114B2 (en) * 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2007055373A1 (ja) 2005-11-14 2009-04-30 株式会社ニコン 液体回収部材、露光装置、露光方法、及びデバイス製造方法
TWI439813B (zh) * 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
US7567338B2 (en) * 2006-08-30 2009-07-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8004651B2 (en) * 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
KR100843709B1 (ko) * 2007-02-05 2008-07-04 삼성전자주식회사 액체 실링 유니트 및 이를 갖는 이멀젼 포토리소그래피장치
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8300207B2 (en) 2007-05-17 2012-10-30 Nikon Corporation Exposure apparatus, immersion system, exposing method, and device fabricating method
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1036253A1 (nl) * 2007-12-10 2009-06-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2131241B1 (en) * 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8421993B2 (en) * 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2249205B1 (en) * 2008-05-08 2012-03-07 ASML Netherlands BV Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method
NL2004362A (en) * 2009-04-10 2010-10-12 Asml Netherlands Bv A fluid handling device, an immersion lithographic apparatus and a device manufacturing method.
KR20120101437A (ko) 2009-11-09 2012-09-13 가부시키가이샤 니콘 노광 장치, 노광 방법, 노광 장치의 메인터넌스 방법, 노광 장치의 조정 방법, 및 디바이스 제조 방법
US20110134400A1 (en) * 2009-12-04 2011-06-09 Nikon Corporation Exposure apparatus, liquid immersion member, and device manufacturing method
WO2011081062A1 (ja) 2009-12-28 2011-07-07 株式会社ニコン 液浸部材、液浸部材の製造方法、露光装置、及びデバイス製造方法
US9223225B2 (en) * 2010-01-08 2015-12-29 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method
NL2007439A (en) 2010-10-19 2012-04-23 Asml Netherlands Bv Gas manifold, module for a lithographic apparatus, lithographic apparatus and device manufacturing method.
US9329496B2 (en) 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
US9256137B2 (en) 2011-08-25 2016-02-09 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
US20130050666A1 (en) 2011-08-26 2013-02-28 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
KR102050822B1 (ko) * 2012-12-27 2019-12-02 세메스 주식회사 기판 처리 장치
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
JP5979302B2 (ja) 2013-02-28 2016-08-24 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
KR101639774B1 (ko) * 2015-01-27 2016-07-15 한국생산기술연구원 노즐 헤드 조립체 및 노즐 헤드 조립체를 포함하는 액체공급장치
EP3510446B1 (en) 2016-09-12 2022-10-05 ASML Netherlands B.V. Fluid handling structure for lithographic apparatus
CN110716391B (zh) * 2018-07-11 2025-02-11 上海微电子装备(集团)股份有限公司 大尺寸基板曝光机
JP7194076B2 (ja) * 2019-05-27 2022-12-21 株式会社日立産機システム 油入変圧器
JP7536571B2 (ja) * 2020-09-15 2024-08-20 キオクシア株式会社 位置計測装置及び計測方法
CN116699947B (zh) * 2023-06-02 2025-03-11 浙江大学 光刻设备检测系统及其检测方法

Family Cites Families (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (https=)
NL289231A (https=) 1963-11-21
US3314219A (en) * 1965-03-10 1967-04-18 Bass Brothers Entpr Inc Drilling mud degassers for oil wells
US3675395A (en) * 1970-10-09 1972-07-11 Keene Corp Apparatus for the purification of oils and the like
US6420721B1 (en) * 1975-01-20 2002-07-16 Bae Systems Information And Electronic Systems Integration, Inc. Modulated infrared source
US4315760A (en) * 1980-01-17 1982-02-16 Bij De Leij Jan D Method and apparatus for degasing, during transportation, a confined volume of liquid to be measured
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
US4466253A (en) * 1982-12-23 1984-08-21 General Electric Company Flow control at flash tank of open cycle vapor compression heat pumps
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
FI73950C (fi) * 1985-02-15 1987-12-10 Hackman Ab Oy Foerfarande och anordning vid pumpning och volymmaetning av livsmedelsvaetskor.
CN85104763B (zh) * 1985-06-13 1988-08-24 沈汉石 液压系统中消除气穴的方法和装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
US4730634A (en) * 1986-06-19 1988-03-15 Amoco Corporation Method and apparatus for controlling production of fluids from a well
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5312552A (en) * 1993-02-02 1994-05-17 Norman J M Method and apparatus for removing BTX-type gases from a liquid
JPH06232036A (ja) * 1993-02-04 1994-08-19 Tokyo Ohka Kogyo Co Ltd 液体回収装置及び回収方法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5545072A (en) * 1994-07-27 1996-08-13 Toy Biz, Inc. Image projective toy
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
TW306011B (https=) 1995-04-19 1997-05-21 Tokyo Electron Co Ltd
JP3260624B2 (ja) * 1995-04-19 2002-02-25 東京エレクトロン株式会社 塗布装置およびその制御方法
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
EP1944654A3 (en) * 1996-11-28 2010-06-02 Nikon Corporation An exposure apparatus and an exposure method
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
TW490596B (en) * 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
EP1409834A2 (en) * 2000-01-17 2004-04-21 Lattice Intellectual Property Limited Slugging control
DE10011130A1 (de) 2000-03-10 2001-09-13 Mannesmann Vdo Ag Entlüftungseinrichtung für einen Kraftstoffbehälter
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
SE517821C2 (sv) * 2000-09-29 2002-07-16 Tetra Laval Holdings & Finance Metod och anordning för att kontinuerligt avlufta en vätska
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US20040154641A1 (en) * 2002-05-17 2004-08-12 P.C.T. Systems, Inc. Substrate processing apparatus and method
KR20050035890A (ko) 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101470360B (zh) * 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4171886B2 (ja) * 2002-11-29 2008-10-29 セイコーエプソン株式会社 キャリッジ速度制御装置、該キャリッジ速度制御装置を備えた液体噴射装置、キャリッジ速度制御プログラム
SG157962A1 (en) 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
JP4168325B2 (ja) 2002-12-10 2008-10-22 ソニー株式会社 高分子アクチュエータ
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
CN100370533C (zh) 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
EP1584089B1 (en) 2002-12-19 2006-08-02 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
ATE365962T1 (de) 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR101643112B1 (ko) 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2004310016A (ja) * 2003-03-25 2004-11-04 Tokai Rubber Ind Ltd 半導電性シームレスベルト
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4428115B2 (ja) * 2003-04-11 2010-03-10 株式会社ニコン 液浸リソグラフィシステム
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
US8370165B2 (en) 2003-04-11 2013-02-05 United States Postal Service Methods and systems for providing an alternative delivery point code
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004356205A (ja) * 2003-05-27 2004-12-16 Tadahiro Omi スキャン型露光装置および露光方法
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR20190002749A (ko) * 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4405208B2 (ja) 2003-08-25 2010-01-27 株式会社ルネサステクノロジ 固体撮像装置の製造方法
EP1660925B1 (en) * 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005123258A (ja) * 2003-10-14 2005-05-12 Canon Inc 液浸露光装置
EP2267537B1 (en) 2003-10-28 2017-09-13 ASML Netherlands BV Lithographic apparatus
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP2005175176A (ja) * 2003-12-11 2005-06-30 Nikon Corp 露光方法及びデバイス製造方法
KR101440743B1 (ko) 2004-01-05 2014-09-17 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
WO2005081294A1 (ja) * 2004-02-20 2005-09-01 Nikon Corporation 露光装置、液体処理方法、露光方法、及びデバイス製造方法
JP4510494B2 (ja) 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4677986B2 (ja) * 2004-04-19 2011-04-27 株式会社ニコン ノズル部材、露光方法、露光装置及びデバイス製造方法
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
EP1747499A2 (en) * 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
JP4515335B2 (ja) * 2004-06-10 2010-07-28 株式会社ニコン 露光装置、ノズル部材、及びデバイス製造方法
US8373843B2 (en) * 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2624282B1 (en) * 2004-06-10 2017-02-08 Nikon Corporation Immersion exposure apparatus and method, and methods for producing a device
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US7180572B2 (en) * 2004-06-23 2007-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion optical projection system
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) * 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7474379B2 (en) * 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US8482716B2 (en) 2013-07-09
JP2013229631A (ja) 2013-11-07
US10203614B2 (en) 2019-02-12
KR20170010907A (ko) 2017-02-01
IL240857B (en) 2018-05-31
CN102736446A (zh) 2012-10-17
KR20130103812A (ko) 2013-09-24
TW201614390A (en) 2016-04-16
JP2012129561A (ja) 2012-07-05
IL179787A (en) 2015-09-24
IL240857A0 (en) 2015-10-29
TWI531869B (zh) 2016-05-01
JP5671585B2 (ja) 2015-02-18
JP5295165B2 (ja) 2013-09-18
KR101556454B1 (ko) 2015-10-13
JP2017037344A (ja) 2017-02-16
EP1768170A1 (en) 2007-03-28
EP2624282A2 (en) 2013-08-07
EP2624282A3 (en) 2013-09-18
JP2014099649A (ja) 2014-05-29
US8704999B2 (en) 2014-04-22
IL240860B (en) 2018-04-30
TW201809907A (zh) 2018-03-16
KR101699965B1 (ko) 2017-01-25
SG155903A1 (en) 2009-10-29
EP3203321A1 (en) 2017-08-09
TW200612206A (en) 2006-04-16
JP2013229632A (ja) 2013-11-07
JP5634332B2 (ja) 2014-12-03
TWI417670B (zh) 2013-12-01
TW201403260A (zh) 2014-01-16
JP2016048395A (ja) 2016-04-07
US9529273B2 (en) 2016-12-27
CN102736446B (zh) 2014-09-17
JP2018063450A (ja) 2018-04-19
JP6381609B2 (ja) 2018-08-29
JP6154881B2 (ja) 2017-06-28
US20080266533A1 (en) 2008-10-30
KR101485650B1 (ko) 2015-01-23
IL240860A0 (en) 2015-10-29
KR20130004602A (ko) 2013-01-11
HK1138074A1 (en) 2010-08-13
HK1105243A1 (zh) 2008-02-06
EP1768170A4 (en) 2010-06-16
SG10201607447RA (en) 2016-10-28
KR20150038563A (ko) 2015-04-08
TW201903538A (zh) 2019-01-16
KR20070032641A (ko) 2007-03-22
KR20120034136A (ko) 2012-04-09
JP5671491B2 (ja) 2015-02-18
KR101178755B1 (ko) 2012-08-31
KR101310472B1 (ko) 2013-09-24
TWI531868B (zh) 2016-05-01
EP2605068A2 (en) 2013-06-19
US20170097578A1 (en) 2017-04-06
KR20140088221A (ko) 2014-07-09
US20180011411A1 (en) 2018-01-11
US9134621B2 (en) 2015-09-15
US20160097982A1 (en) 2016-04-07
EP2624282B1 (en) 2017-02-08
JP2015128171A (ja) 2015-07-09
JP2010171451A (ja) 2010-08-05
WO2005122221A1 (ja) 2005-12-22
JP5911898B2 (ja) 2016-04-27
SG188877A1 (en) 2013-04-30
JP5671584B2 (ja) 2015-02-18
IL258838A (en) 2018-06-28
KR101612656B1 (ko) 2016-04-15
US20190146360A1 (en) 2019-05-16
TWI612393B (zh) 2018-01-21
US20130293860A1 (en) 2013-11-07
EP2605068A3 (en) 2013-10-02
JP6125551B2 (ja) 2017-05-10
JP2011199310A (ja) 2011-10-06
TW201403259A (zh) 2014-01-16
US9778580B2 (en) 2017-10-03
TWI639898B (zh) 2018-11-01
IL179787A0 (en) 2007-05-15
US20100195067A1 (en) 2010-08-05

Similar Documents

Publication Publication Date Title
KR101612656B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4515335B2 (ja) 露光装置、ノズル部材、及びデバイス製造方法
KR101505756B1 (ko) 노광 장치, 노광 방법, 및 디바이스 제조 방법
CN1981365A (zh) 曝光装置、曝光方法及元件制造方法
HK1105243B (zh) 曝光装置及元件制造方法
HK1138074B (en) Exposure equipment, exposure method and device manufacturing method
HK1175260A (en) Exposure equipment and device manufacturing method
HK1175260B (en) Exposure equipment and device manufacturing method

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000