KR20140142177A - 온도 제어형 기판 지지 어셈블리 - Google Patents

온도 제어형 기판 지지 어셈블리 Download PDF

Info

Publication number
KR20140142177A
KR20140142177A KR1020140067723A KR20140067723A KR20140142177A KR 20140142177 A KR20140142177 A KR 20140142177A KR 1020140067723 A KR1020140067723 A KR 1020140067723A KR 20140067723 A KR20140067723 A KR 20140067723A KR 20140142177 A KR20140142177 A KR 20140142177A
Authority
KR
South Korea
Prior art keywords
base plate
support assembly
substrate support
plate
thermoelectric module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020140067723A
Other languages
English (en)
Korean (ko)
Inventor
앤서니 리치
헨리 포볼니
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20140142177A publication Critical patent/KR20140142177A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/021Control thereof
    • F25B2321/0212Control thereof of electric power, current or voltage
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/025Removal of heat
    • F25B2321/0252Removal of heat by liquids or two-phase fluids
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
KR1020140067723A 2013-06-03 2014-06-03 온도 제어형 기판 지지 어셈블리 Ceased KR20140142177A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/908,676 US20140356985A1 (en) 2013-06-03 2013-06-03 Temperature controlled substrate support assembly
US13/908,676 2013-06-03

Publications (1)

Publication Number Publication Date
KR20140142177A true KR20140142177A (ko) 2014-12-11

Family

ID=51985552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140067723A Ceased KR20140142177A (ko) 2013-06-03 2014-06-03 온도 제어형 기판 지지 어셈블리

Country Status (4)

Country Link
US (2) US20140356985A1 (https=)
JP (1) JP6364244B2 (https=)
KR (1) KR20140142177A (https=)
TW (1) TWI633622B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170044015A (ko) * 2015-10-05 2017-04-24 램 리써치 코포레이션 통합된 온도 측정 전기 디바이스들을 가진 기판 홀더
KR20190101036A (ko) * 2018-02-22 2019-08-30 주식회사 에프에스티 정전척 및 반도체처리장치의 제어장치
KR20210041059A (ko) * 2018-11-09 2021-04-14 가부시키가이샤 케르쿠 온도 조정 장치
KR20210058973A (ko) * 2018-11-09 2021-05-24 가부시키가이샤 케르쿠 온도 조절 장치
WO2024101896A1 (ko) * 2022-11-09 2024-05-16 주식회사 이에스티 고온 정전척

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999067B2 (ja) 1992-06-11 2000-01-17 三菱重工業株式会社 ロールクロス圧延機のロールクロス装置
SG188036A1 (en) 2011-08-18 2013-03-28 Asml Netherlands Bv Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US10800092B1 (en) * 2013-12-18 2020-10-13 Surfx Technologies Llc Low temperature atmospheric pressure plasma for cleaning and activating metals
JP5811513B2 (ja) 2014-03-27 2015-11-11 Toto株式会社 静電チャック
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US10029396B2 (en) * 2014-10-30 2018-07-24 Shachihata Inc. Seal carving apparatus and thermal carving machine
US9699883B2 (en) * 2015-01-08 2017-07-04 Toyota Motor Engineering & Manufacturing North America, Inc. Thermal switches for active heat flux alteration
WO2016199484A1 (ja) * 2015-06-09 2016-12-15 株式会社村田製作所 熱電変換素子、熱電変換モジュールおよび電気機器
AT516385B1 (de) * 2015-06-23 2016-05-15 Avl List Gmbh Temperiereinheit für ein gasförmiges oder flüssiges Medium
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
JP6322182B2 (ja) * 2015-12-25 2018-05-09 日本特殊陶業株式会社 保持装置および接着シート
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
JP6794193B2 (ja) 2016-09-02 2020-12-02 株式会社小松製作所 作業機械の画像表示システム
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10763141B2 (en) * 2017-03-17 2020-09-01 Applied Materials, Inc. Non-contact temperature calibration tool for a substrate support and method of using the same
US11160143B2 (en) 2017-04-12 2021-10-26 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Temperature controlled electrospinning substrate
US11011355B2 (en) 2017-05-12 2021-05-18 Lam Research Corporation Temperature-tuned substrate support for substrate processing systems
CN108987323B (zh) * 2017-06-05 2020-03-31 北京北方华创微电子装备有限公司 一种承载装置及半导体加工设备
US20180366354A1 (en) * 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
KR20200019235A (ko) * 2017-06-23 2020-02-21 와틀로 일렉트릭 매뉴팩츄어링 컴파니 고온 가열판 받침대
JP7010620B2 (ja) * 2017-08-01 2022-01-26 株式会社Kelk 熱電発電装置
US10181674B1 (en) 2017-08-09 2019-01-15 Phoenix Contact Development and Manufacturing, Inc. Composite electrical connector system
CN109729722A (zh) * 2017-08-30 2019-05-07 韩国生产技术研究院 微尘前驱物质的精密测量系统
WO2019088479A1 (ko) 2017-10-31 2019-05-09 한국생산기술연구원 야외용 tdlas 멀티패스 셀
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
KR102024097B1 (ko) 2017-10-31 2019-09-23 한국생산기술연구원 온도 조절부가 구비된 야외용 tdlas 멀티패스 셀
KR102024101B1 (ko) 2017-10-31 2019-09-23 한국생산기술연구원 프리즘 반사체를 구비한 미세먼지 전구물질의 정밀 측정 시스템
DE102017223592B4 (de) * 2017-12-21 2023-11-09 Meyer Burger (Germany) Gmbh System zur elektrisch entkoppelten, homogenen Temperierung einer Elektrode mittels Wärmeleitrohren sowie Bearbeitungsanlage mit einem solchen System
CN108151529A (zh) * 2017-12-22 2018-06-12 合肥费舍罗热工装备有限公司 一种双温区开启式滑轨炉
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
JP6903135B2 (ja) 2018-04-05 2021-07-14 ラム リサーチ コーポレーションLam Research Corporation 冷却ガス区画および対応する溝ならびに単極静電クランプ電極パターンを備える静電チャック
CN108644745B (zh) * 2018-06-20 2021-09-17 深圳市漫反射照明科技有限公司 一种节能热回收系统及其节能热回收方法
US11309203B2 (en) 2018-11-13 2022-04-19 Samsung Electronics Co., Ltd. Wafer stage and method of manufacturing the same
JP2020080365A (ja) 2018-11-13 2020-05-28 三星電子株式会社Samsung Electronics Co.,Ltd. ウェハーステージ、半導体製造装置、ウェハーステージの製造方法
KR102161537B1 (ko) * 2018-11-16 2020-10-05 (주)엠크래프츠 전자현미경용 시료대
CN113056572B (zh) * 2018-11-16 2023-09-05 株式会社爱发科 真空处理装置
KR102854551B1 (ko) * 2018-11-28 2025-09-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 증기 챔버를 포함하는 페데스탈
KR20250011246A (ko) 2019-02-28 2025-01-21 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
JP7285693B2 (ja) * 2019-05-23 2023-06-02 東京エレクトロン株式会社 ステージ装置および処理装置
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
JP7316179B2 (ja) * 2019-10-04 2023-07-27 東京エレクトロン株式会社 基板支持台、及びプラズマ処理装置
US11587799B2 (en) 2019-12-02 2023-02-21 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR20210088980A (ko) * 2020-01-07 2021-07-15 엘지이노텍 주식회사 열전소자
JP7018978B2 (ja) * 2020-01-31 2022-02-14 株式会社日立ハイテク プラズマ処理装置
WO2021221886A1 (en) 2020-04-29 2021-11-04 Applied Materials, Inc. Heater cover plate for uniformity improvement
US11871667B2 (en) 2020-09-17 2024-01-09 Applied Materials, Inc. Methods and apparatus for warpage correction
JP6842225B1 (ja) * 2020-11-12 2021-03-17 ハイソル株式会社 チャックユニット及びチャックユニットの温度制御方法
CN112614930B (zh) * 2020-11-18 2022-10-04 浙江先导热电科技股份有限公司 一种特殊位置的传感器热电模块
AT524204B1 (de) * 2021-01-05 2022-04-15 Avl List Gmbh Temperiervorrichtung für ein gasförmiges Medium
CN112899659B (zh) * 2021-01-19 2022-06-14 中国科学院半导体研究所 用于等离子体化学气相的样品支架
CN114858234A (zh) * 2021-07-22 2022-08-05 呼和浩特中燃城市燃气发展有限公司 工商业燃气流量计量系统
WO2023091629A2 (en) * 2021-11-22 2023-05-25 Cvd Equipment Corporation Improvements in chemical vapor deposition systems
US11953721B2 (en) * 2022-06-15 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic system including micro ring modulator and method of using
CN118280801A (zh) * 2022-12-29 2024-07-02 中微半导体设备(上海)股份有限公司 一种多孔塞组件、静电吸盘及等离子体刻蚀装置
US20240243545A1 (en) * 2023-01-17 2024-07-18 Lawrence Livermore National Security, Llc Systems and methods for cooling high power devices
DE102023201942A1 (de) * 2023-03-03 2024-09-05 Carl Zeiss Smt Gmbh Peltier-Modul, Baugruppe und Vorrichtung zur Maskeninspektion

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769550A (en) 1972-05-30 1973-10-30 Lear Siegler Inc Voltage sensitive control device
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59151084A (ja) 1983-02-18 1984-08-29 株式会社日立製作所 核融合装置
US4674565A (en) * 1985-07-03 1987-06-23 The United States Of America As Represented By The Secretary Of The Air Force Heat pipe wick
US4595484A (en) 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4820371A (en) 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US5182059A (en) 1989-01-17 1993-01-26 Ngk Insulators, Ltd. Process for producing high density SiC sintered bodies
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5292399A (en) 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5085727A (en) 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JP3207871B2 (ja) * 1991-07-09 2001-09-10 キヤノン株式会社 ウエハ支持装置
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JP3131012B2 (ja) 1992-03-24 2001-01-31 日本碍子株式会社 加熱装置
DE4231702C2 (de) 1992-09-22 1995-05-24 Litef Gmbh Thermoelektrische, beheizbare Kühlkammer
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
JP3264391B2 (ja) 1993-05-17 2002-03-11 東京エレクトロン株式会社 静電吸着体の離脱装置
JPH06283594A (ja) 1993-03-24 1994-10-07 Tokyo Electron Ltd 静電チャック
US5560779A (en) * 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JPH07335635A (ja) 1994-06-10 1995-12-22 Souzou Kagaku:Kk 平行平板形ドライエッチング装置
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5885356A (en) 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH0967685A (ja) 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
US5589000A (en) 1995-09-06 1996-12-31 Minnesota Mining And Manufacturing Company Fixture for deposition
JPH09153481A (ja) 1995-11-30 1997-06-10 Sumitomo Metal Ind Ltd プラズマ処理装置
US5730803A (en) 1996-02-23 1998-03-24 Applied Materials, Inc. Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
JP3155199B2 (ja) 1996-04-12 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
JP3454333B2 (ja) 1996-04-22 2003-10-06 日清紡績株式会社 プラズマエッチング電極
US6448538B1 (en) 1996-05-05 2002-09-10 Seiichiro Miyata Electric heating element
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5904778A (en) 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US5993594A (en) 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6073577A (en) 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
JP2000274871A (ja) 1999-03-19 2000-10-06 Matsushita Refrig Co Ltd 熱電装置、並びに、熱電マニホールド
US6227140B1 (en) 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6408786B1 (en) 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
US6705394B1 (en) 1999-10-29 2004-03-16 Cvc Products, Inc. Rapid cycle chuck for low-pressure processing
US6741446B2 (en) 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
US20050211385A1 (en) * 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP4593007B2 (ja) 2001-05-23 2010-12-08 東京エレクトロン株式会社 載置装置
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6886347B2 (en) 2002-07-11 2005-05-03 Temptronic Corporation Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules
EP1387054B1 (en) 2002-07-31 2012-07-25 Canon Kabushiki Kaisha Cooling apparatus for an optical element, exposure apparatus comprising said cooling apparatus, and device fabrication method
US6838646B2 (en) * 2002-08-22 2005-01-04 Sumitomo Osaka Cement Co., Ltd. Susceptor device
US6992306B2 (en) 2003-04-15 2006-01-31 Canon Kabushiki Kaisha Temperature adjustment apparatus, exposure apparatus having the same, and device fabricating method
US7543546B2 (en) 2003-05-27 2009-06-09 Matsushita Electric Works, Ltd. Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
JP4442171B2 (ja) 2003-09-24 2010-03-31 東京エレクトロン株式会社 熱処理装置
JP2005109158A (ja) 2003-09-30 2005-04-21 Canon Inc 冷却装置及び方法、それを有する露光装置、デバイスの製造方法
JP4833859B2 (ja) 2004-01-30 2011-12-07 東京エレクトロン株式会社 流体用ギャップを有する基板ホルダとこの基板ホルダの製造方法
US7141763B2 (en) 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
JP4765328B2 (ja) 2004-04-16 2011-09-07 東京エレクトロン株式会社 被処理体の処理装置
US20060005873A1 (en) * 2004-07-06 2006-01-12 Mitsuru Kambe Thermoelectric conversion module
US8063298B2 (en) 2004-10-22 2011-11-22 Nextreme Thermal Solutions, Inc. Methods of forming embedded thermoelectric coolers with adjacent thermally conductive fields
US7475551B2 (en) 2004-12-23 2009-01-13 Nanocoolers, Inc. System employing temporal integration of thermoelectric action
TWI275766B (en) 2005-03-18 2007-03-11 Foxconn Tech Co Ltd Heat pipe
US7525787B2 (en) 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
JP2007257014A (ja) * 2006-03-20 2007-10-04 Yamaha Corp 温度制御装置
US8216468B2 (en) 2006-04-25 2012-07-10 Jc Environmental Inc. Water treatment apparatus and method
US7501605B2 (en) 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
KR20090028343A (ko) 2007-09-14 2009-03-18 주식회사 에이디피엔지니어링 전극부재 및 이를 포함하는 기판처리장치
TW200913798A (en) * 2007-09-14 2009-03-16 Advanced Display Proc Eng Co Substrate processing apparatus having electrode member
JP2009094138A (ja) 2007-10-04 2009-04-30 Sei Hybrid Kk ウエハ保持体および半導体製造装置
KR101209503B1 (ko) * 2008-11-10 2012-12-07 고쿠리츠다이가쿠호진 도호쿠다이가쿠 반도체 웨이퍼의 온도 제어 장치 및 온도 제어 방법
US8359871B2 (en) * 2009-02-11 2013-01-29 Marlow Industries, Inc. Temperature control device
JP2011054838A (ja) * 2009-09-03 2011-03-17 Tokyo Electron Ltd 載置台構造及び処理装置
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
GB2475306A (en) 2009-11-16 2011-05-18 Groveley Detection Ltd Temperature control apparatus including heat pipe for a gas or other detector that extends its operating range to extreme temperatures
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
JP6017906B2 (ja) * 2011-10-19 2016-11-02 株式会社Kelk 温調装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170044015A (ko) * 2015-10-05 2017-04-24 램 리써치 코포레이션 통합된 온도 측정 전기 디바이스들을 가진 기판 홀더
KR20190101036A (ko) * 2018-02-22 2019-08-30 주식회사 에프에스티 정전척 및 반도체처리장치의 제어장치
KR20210041059A (ko) * 2018-11-09 2021-04-14 가부시키가이샤 케르쿠 온도 조정 장치
KR20210058973A (ko) * 2018-11-09 2021-05-24 가부시키가이샤 케르쿠 온도 조절 장치
US11935767B2 (en) 2018-11-09 2024-03-19 Kelk Ltd. Temperature control device
US12131940B2 (en) 2018-11-09 2024-10-29 Kelk Ltd. Temperature control device
WO2024101896A1 (ko) * 2022-11-09 2024-05-16 주식회사 이에스티 고온 정전척

Also Published As

Publication number Publication date
TWI633622B (zh) 2018-08-21
US10879053B2 (en) 2020-12-29
JP2015008287A (ja) 2015-01-15
US20170110298A1 (en) 2017-04-20
JP6364244B2 (ja) 2018-07-25
TW201511174A (zh) 2015-03-16
US20140356985A1 (en) 2014-12-04

Similar Documents

Publication Publication Date Title
TWI633622B (zh) 溫度控制基板支撐組件
TWI815810B (zh) 噴頭組件、處理腔室及控制溫度之方法
US10236193B2 (en) Substrate supports with multi-layer structure including independent operated heater zones
US9713200B2 (en) System and method for monitoring temperatures of and controlling multiplexed heater array
JP3129419U (ja) 基板の温度を制御する装置
US8461674B2 (en) Thermal plate with planar thermal zones for semiconductor processing
US8809747B2 (en) Current peak spreading schemes for multiplexed heated array
US8624168B2 (en) Heating plate with diode planar heater zones for semiconductor processing
US20120115254A1 (en) Heating plate with planar heater zones for semiconductor processing
CN105206552A (zh) 多路的加热器阵列的故障检测方法
KR102955285B1 (ko) 인-시튜 반도체 프로세싱 챔버 온도 장치

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

X601 Decision of rejection after re-examination
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

J301 Trial decision

Free format text: TRIAL NUMBER: 2021101002176; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20210823

Effective date: 20220330

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20220330

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2014 0067723

Appeal request date: 20210823

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2021101002176

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000