JP6364244B2 - 温度制御された基板支持アセンブリ - Google Patents
温度制御された基板支持アセンブリ Download PDFInfo
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- JP6364244B2 JP6364244B2 JP2014114039A JP2014114039A JP6364244B2 JP 6364244 B2 JP6364244 B2 JP 6364244B2 JP 2014114039 A JP2014114039 A JP 2014114039A JP 2014114039 A JP2014114039 A JP 2014114039A JP 6364244 B2 JP6364244 B2 JP 6364244B2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/021—Control thereof
- F25B2321/0212—Control thereof of electric power, current or voltage
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/025—Removal of heat
- F25B2321/0252—Removal of heat by liquids or two-phase fluids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
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Description
Claims (20)
- 半導体処理装置の真空チャンバのなかで基板を処理するための、温度制御された基板支持アセンブリであって、
前記基板を支えるように構成されたトップ板と、
前記トップ板の下方に配されたベース板であって、その上面内に空洞を含むベース板と、
前記空洞を取り囲み、前記トップ板と前記ベース板との間に配されたカバー板と、
前記ベース板の前記上面内の前記空洞内の少なくとも1つの熱電モジュールであって、前記トップ板及び前記ベース板と熱的に接触し、大気圧に維持される少なくとも1つの熱電モジュールと、
を備え、
前記空洞は大気に開放されている、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
(a)前記少なくとも1つの熱電モジュールは、電気的に接触しており且つペルチェ効果にしたがって動作する交互のp型半導体素子とn型半導体素子とを含む、
(b)前記ベース板の前記上面内の前記空洞内には、上向きの突起が位置付けられる、
及び/又は、
(c)前記少なくとも1つの熱電モジュールのそれぞれの上面及び下面を、電気絶縁層が覆う、温度制御された基板支持アセンブリ。 - 請求項2に記載の温度制御された基板支持アセンブリであって、
(a)前記少なくとも1つの熱電モジュールの前記上面及び前記下面の前記電気絶縁層は、接着剤によって前記カバー板及び前記ベース板に接合される、
(b)前記少なくとも1つの熱電モジュールの前記上面の前記電気絶縁層は、前記ベース板の前記上面の前記上向き突起及び外壁との間に真空シールを形成する、
及び/又は、
(c)前記ベース板の各上向き突起は、リフトピンを受けるように及び/若しくは前記トップ板の表面に裏面ヘリウムガスを供給するように構成された縦穴を含む、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
(a)前記トップ板は、誘電性材料の層に少なくとも1つの静電電極を埋め込まれた静電チャックを含む、
及び/又は、
(b)前記ベース板は、温度制御された流体が循環する流路を含む、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
前記少なくとも1つの熱電モジュールの前記下面は、はんだ又は低融点合金によって前記ベース板内の前記空洞の上面に接合される、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
前記空洞内には、前記空洞内の各熱電モジュールが前記トップ板上に対応する温度制御ゾーンを形成するように、少なくとも2つの熱電モジュールが配置される、温度制御された基板支持アセンブリ。 - 請求項6に記載の温度制御された基板支持アセンブリであって、
各熱電モジュールは、前記トップ板上に対応する温度制御ゾーンを形成し、前記温度制御ゾーンは、1つ以上の温度制御ゾーンによって中心の温度制御ゾーンが取り囲まれて形成された環状構造、格子構造、放射状構造、方位角状構造、極性構造、又は非極性構造を含む、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、更に、
前記トップ板の温度制御ゾーンに対応する複数のセンサを備え、各センサは、各対応する温度制御ゾーンの温度を表す信号を出力するように動作可能である、温度制御された基板支持アセンブリ。 - 請求項8に記載の温度制御された基板支持アセンブリであって、更に、
各センサからの信号を受信するための及び各温度制御ゾーンの各熱電モジュールに供給される電力を各温度制御ゾーン用の設定点又はフィードバック制御ループに基づいて調整するためのコントローラを備える温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
(a)前記カバー板は、内側のカバー板と外側の環状カバー板とを含む、
及び/又は、
(b)前記カバー板は、アルミニウム、銅、熱分解黒鉛、セラミック材料、若しくはアルミニウムをコーティングされた熱分解黒鉛で形成される、温度制御された基板支持アセンブリ。 - 請求項10に記載の温度制御された基板支持アセンブリであって、
前記カバー板は、約0.5〜4ミリメートルの厚さを有する、温度制御された基板支持アセンブリ。 - 請求項2に記載の温度制御された基板支持アセンブリであって、
前記カバー板は、前記ベース板の前記上向き突起に対応する下向き突起を含み、
前記下向き突起及び前記上向き突起は、リフトピンを受けるように、及び/又は、裏面ヘリウムガスを供給するように構成された位置揃えされた穴を有し、
前記上向き突起及び前記対応する下向き突起は、前記温度制御された基板支持アセンブリ内にRF電流経路を提供するように構成される、温度制御された基板支持アセンブリ。 - 請求項1に記載の温度制御された基板支持アセンブリであって、
前記ベース板は、前記空洞内の前記少なくとも1つの熱電モジュールと、温度制御された流体が循環する前記ベース板内の流路との間の熱伝導を高めるように構成された伝熱管を含み、
(a)前記ベース板は、前記伝熱管の上方に且つ前記少なくとも1つの熱電モジュールの下方に配された伝熱板を含む、
又は、
(b)前記ベース板は、前記空洞内に配され各伝熱管を取り付けられた伝熱シートを含む、温度制御された基板支持アセンブリ。 - 請求項13に記載の温度制御された基板支持アセンブリであって、
前記伝熱管は、水、アンモニア、及びエタノールからなる群より選択される流体を含む、温度制御された基板支持アセンブリ。 - 請求項13に記載の温度制御された基板支持アセンブリであって、
(a)前記伝熱板は、銅で形成される、
又は、
(b)前記伝熱シートは、銅、アルミニウム、熱分解黒鉛、若しくはアルミニウムをコーティングされた熱分解黒鉛で形成される、温度制御された基板支持アセンブリ。 - プラズマ処理中に基板の温度を制御するための基板支持アセンブリを製造する方法であって、
少なくとも1つの熱電モジュールの下面をベース板の上面内の空洞内の表面に接合することと、
前記少なくとも1つの熱電モジュールの上面に含まれる上方電気絶縁層の下面を前記ベース板の前記上面内の前記空洞を画定している円筒状の壁に及び前記空洞内の上向き突起に接合することであって、前記接合された前記上方電気絶縁層の下面は、前記円筒状の壁及び前記上向き突起との間に真空シールを形成し、前記空洞は、前記ベース板の前記上面内の前記空洞の表面を通じて大気に開放される、ことと、
前記上方電気絶縁層の上面をカバー板に接合することと、
を備える方法。 - 請求項16に記載の方法であって、
(a)前記少なくとも1つの熱電モジュールの前記下面は、はんだ若しくは低融点合金によって前記ベース板の前記上面内の前記空洞内の前記表面に接合される、
又は、
(b)前記少なくとも1つの熱電モジュールの前記下面は、下方電気絶縁層に接合され、前記下方電気絶縁層の下面は、前記ベース板の前記上面内の前記空洞内の前記表面に接合される、方法。 - 請求項16に記載の方法であって、更に、
(a)前記ベース板の表面内にドリルで縦穴を開け、前記ベース板内の各開けられた穴に伝熱管を挿入することであって、各伝熱管の上面は、各穴を開けられた前記ベース板の前記表面と同一面上にある、こと、
及び/又は、
(b)前記基板支持アセンブリ内に伝熱板を取り付けることであって、前記伝熱板は、前記伝熱管の上方に且つ前記少なくとも1つの熱電モジュールの下方に配され、前記伝熱板は、前記少なくとも2つの熱電モジュールを含む複数の熱電モジュール及び前記伝熱管の間で熱を均一に分布させるように構成される、こと、
を備える方法。 - 請求項1に記載の温度制御された基板支持アセンブリと、前記基板支持アセンブリを取り囲む真空処理チャンバとを備える半導体処理システムにおいて基板を処理する方法であって、
前記トップ板の表面の1つ以上のゾーンの温度を制御するために、前記トップ板と伝熱接触している前記少なくとも1つの熱電モジュールに電流を供給するステップと、
前記トップ板の表面の温度を制御するために及び前記基板の処理中に前記基板に所望の温度分布を提供するために、前記少なくとも1つの熱電モジュールに供給される電流を制御するステップと、
を備える方法。 - 請求項19に記載の方法であって、
前記トップ板は、更に、少なくとも1つの熱電モジュールを埋め込まれ、
前記基板は、ウエハを含み、
前記処理することは、プラズマエッチング又は化学気相蒸着を含む、方法。
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-
2013
- 2013-06-03 US US13/908,676 patent/US20140356985A1/en not_active Abandoned
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2014
- 2014-06-02 JP JP2014114039A patent/JP6364244B2/ja active Active
- 2014-06-03 KR KR1020140067723A patent/KR20140142177A/ko not_active IP Right Cessation
- 2014-06-03 TW TW103119267A patent/TWI633622B/zh active
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2016
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US20140356985A1 (en) | 2014-12-04 |
TW201511174A (zh) | 2015-03-16 |
US10879053B2 (en) | 2020-12-29 |
TWI633622B (zh) | 2018-08-21 |
US20170110298A1 (en) | 2017-04-20 |
JP2015008287A (ja) | 2015-01-15 |
KR20140142177A (ko) | 2014-12-11 |
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