KR20130046357A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20130046357A
KR20130046357A KR1020120114749A KR20120114749A KR20130046357A KR 20130046357 A KR20130046357 A KR 20130046357A KR 1020120114749 A KR1020120114749 A KR 1020120114749A KR 20120114749 A KR20120114749 A KR 20120114749A KR 20130046357 A KR20130046357 A KR 20130046357A
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KR
South Korea
Prior art keywords
film
oxide semiconductor
insulating film
semiconductor film
oxide
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Ceased
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KR1020120114749A
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English (en)
Korean (ko)
Inventor
타츠야 혼다
마사시 츠부쿠
유스케 노나카
타카시 시마즈
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20130046357A publication Critical patent/KR20130046357A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020120114749A 2011-10-27 2012-10-16 반도체 장치 Ceased KR20130046357A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011235636 2011-10-27
JPJP-P-2011-235636 2011-10-27

Related Child Applications (1)

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KR1020190108265A Division KR102113427B1 (ko) 2011-10-27 2019-09-02 반도체 장치

Publications (1)

Publication Number Publication Date
KR20130046357A true KR20130046357A (ko) 2013-05-07

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KR1020120114749A Ceased KR20130046357A (ko) 2011-10-27 2012-10-16 반도체 장치
KR1020190108265A Active KR102113427B1 (ko) 2011-10-27 2019-09-02 반도체 장치

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Country Status (3)

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US (2) US8698214B2 (enExample)
JP (6) JP6125192B2 (enExample)
KR (2) KR20130046357A (enExample)

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JP6082562B2 (ja) * 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
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CN104201111A (zh) * 2014-09-18 2014-12-10 六安市华海电子器材科技有限公司 一种氧化物半导体薄膜晶体管的制备方法
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
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CN107146816B (zh) * 2017-04-10 2020-05-15 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管
WO2020021383A1 (ja) 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 半導体装置
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN112635572A (zh) * 2020-12-24 2021-04-09 广东省科学院半导体研究所 薄膜晶体管及其制备方法和显示器件

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