KR20120127613A - 실리콘의 결정질 산화물 부동화 박막을 포함하는 광전지 및 그 제조 방법 - Google Patents

실리콘의 결정질 산화물 부동화 박막을 포함하는 광전지 및 그 제조 방법 Download PDF

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KR20120127613A
KR20120127613A KR1020127022105A KR20127022105A KR20120127613A KR 20120127613 A KR20120127613 A KR 20120127613A KR 1020127022105 A KR1020127022105 A KR 1020127022105A KR 20127022105 A KR20127022105 A KR 20127022105A KR 20120127613 A KR20120127613 A KR 20120127613A
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substrate
silicon
thin film
amorphous
photovoltaic cell
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Korean (ko)
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피에르 뮈르
위베르 모리소
피에르-장 리베이롱
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꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
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Publication of KR20120127613A publication Critical patent/KR20120127613A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127022105A 2010-01-27 2011-01-26 실리콘의 결정질 산화물 부동화 박막을 포함하는 광전지 및 그 제조 방법 Ceased KR20120127613A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1000309A FR2955702B1 (fr) 2010-01-27 2010-01-27 Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation
FR1000309 2010-01-27
PCT/FR2011/000050 WO2011092402A2 (fr) 2010-01-27 2011-01-26 Cellule photovoltaïque comprenant un film mince de passivation en oxyde cristallin de silicium et procédé de réalisation

Publications (1)

Publication Number Publication Date
KR20120127613A true KR20120127613A (ko) 2012-11-22

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KR1020127022105A Ceased KR20120127613A (ko) 2010-01-27 2011-01-26 실리콘의 결정질 산화물 부동화 박막을 포함하는 광전지 및 그 제조 방법

Country Status (8)

Country Link
US (1) US10276738B2 (enExample)
EP (1) EP2529416B1 (enExample)
JP (2) JP2013518426A (enExample)
KR (1) KR20120127613A (enExample)
CN (1) CN102770972B (enExample)
ES (1) ES2560216T3 (enExample)
FR (1) FR2955702B1 (enExample)
WO (1) WO2011092402A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
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KR20140112649A (ko) * 2013-03-13 2014-09-24 엘지전자 주식회사 태양전지
KR20140115435A (ko) * 2013-03-19 2014-10-01 엘지전자 주식회사 태양전지
KR101867969B1 (ko) * 2017-01-18 2018-06-15 엘지전자 주식회사 이종 접합 태양전지
KR101886818B1 (ko) * 2018-07-25 2018-08-08 충남대학교산학협력단 이종 접합 실리콘 태양 전지의 제조 방법
KR20190008390A (ko) * 2016-11-23 2019-01-23 엘지전자 주식회사 태양 전지 및 이의 제조 방법

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JP5824681B2 (ja) * 2011-06-30 2015-11-25 パナソニックＩｐマネジメント株式会社 光起電力装置
KR101430054B1 (ko) * 2012-09-20 2014-08-18 한국기술교육대학교 산학협력단 결정질 실리콘 태양전지의 제조 방법
FR2996059B1 (fr) * 2012-09-24 2015-06-26 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue
KR101925929B1 (ko) * 2013-01-16 2018-12-06 엘지전자 주식회사 태양 전지 및 그의 제조 방법
KR101925928B1 (ko) * 2013-01-21 2018-12-06 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP2016532317A (ja) * 2013-09-27 2016-10-13 ダンマークス テクニスク ユニバーシテットＤａｎｍａｒｋｓ Ｔｅｋｎｉｓｋｅ Ｕｎｉｖｅｒｓｉｔｅｔ ナノ構造化されたシリコン系太陽電池およびナノ構造化されたシリコン系太陽電池を製造する方法
FR3015770B1 (fr) * 2013-12-19 2016-01-22 Commissariat Energie Atomique Procede et systeme de controle de qualite de cellules photovoltaiques
JP2015138829A (ja) * 2014-01-21 2015-07-30 長州産業株式会社 太陽電池モジュール
US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
WO2016000030A1 (en) * 2014-07-02 2016-01-07 Allen Vincent Akira A method for forming a photovoltaic cell and a photovoltaic cell formed according to the method
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CN104576803B (zh) * 2015-01-21 2016-10-12 中电投西安太阳能电力有限公司 基于GaN纳米线三维结构的太阳能电池及其制备方法
CN105990470B (zh) * 2015-03-06 2017-06-16 新日光能源科技股份有限公司 异质结太阳能电池及其制造方法
CN106024964B (zh) * 2016-07-13 2017-09-22 北京工业大学 一种n型背结双面太阳电池的制备方法
CN106252424A (zh) * 2016-08-24 2016-12-21 常州天合光能有限公司 热氧化改善钝化层界面的异质结电池及其制备方法
JP6785477B2 (ja) * 2016-09-27 2020-11-18 パナソニックＩｐマネジメント株式会社 太陽電池セルおよび太陽電池セルの製造方法
KR102427555B1 (ko) * 2017-01-17 2022-08-01 젯트에프 프리드리히스하펜 아게 규소 탄화물 상에 절연 층을 제조하는 방법
KR102514785B1 (ko) * 2017-05-19 2023-03-29 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
GB2565056A (en) * 2017-07-28 2019-02-06 Comptek Solutions Oy Semiconductor device and method of manufacture
CN108054219A (zh) * 2017-12-15 2018-05-18 浙江晶科能源有限公司 一种p型太阳能电池及其制作方法
CN112151636B (zh) * 2020-08-21 2022-07-15 隆基绿能科技股份有限公司 硅基异质结太阳电池及其制备方法
CN114695587A (zh) * 2020-12-30 2022-07-01 苏州腾晖光伏技术有限公司 一种高效异质结电池结构
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140112649A (ko) * 2013-03-13 2014-09-24 엘지전자 주식회사 태양전지
KR20140115435A (ko) * 2013-03-19 2014-10-01 엘지전자 주식회사 태양전지
KR20190008390A (ko) * 2016-11-23 2019-01-23 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101867969B1 (ko) * 2017-01-18 2018-06-15 엘지전자 주식회사 이종 접합 태양전지
KR101886818B1 (ko) * 2018-07-25 2018-08-08 충남대학교산학협력단 이종 접합 실리콘 태양 전지의 제조 방법

Also Published As

Publication number Publication date
WO2011092402A3 (fr) 2012-08-30
CN102770972B (zh) 2016-03-23
WO2011092402A2 (fr) 2011-08-04
FR2955702A1 (fr) 2011-07-29
ES2560216T3 (es) 2016-02-17
EP2529416A2 (fr) 2012-12-05
FR2955702B1 (fr) 2012-01-27
US20120291861A1 (en) 2012-11-22
EP2529416B1 (fr) 2015-10-21
CN102770972A (zh) 2012-11-07
US10276738B2 (en) 2019-04-30
JP2013518426A (ja) 2013-05-20
JP2016006895A (ja) 2016-01-14

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