KR20100112110A - 완화된 타이밍 제약을 갖는 ｎａｎｄ 플래시 메모리 액세스 - Google Patents

완화된 타이밍 제약을 갖는 ｎａｎｄ 플래시 메모리 액세스 Download PDF

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Publication number
KR20100112110A
KR20100112110A KR1020107009341A KR20107009341A KR20100112110A KR 20100112110 A KR20100112110 A KR 20100112110A KR 1020107009341 A KR1020107009341 A KR 1020107009341A KR 20107009341 A KR20107009341 A KR 20107009341A KR 20100112110 A KR20100112110 A KR 20100112110A
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KR
South Korea
Prior art keywords
nand flash
data
flash memory
buffer
selection
Prior art date
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Ceased
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KR1020107009341A
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English (en)
Korean (ko)
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진기 김
Original Assignee
모사이드 테크놀로지스 인코퍼레이티드
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Publication of KR20100112110A publication Critical patent/KR20100112110A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G06F12/0607—Interleaved addressing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1041—Resource optimization
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1048—Scalability
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
KR1020107009341A 2008-01-22 2008-12-15 완화된 타이밍 제약을 갖는 ｎａｎｄ 플래시 메모리 액세스 Ceased KR20100112110A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2265608P 2008-01-22 2008-01-22
US61/022,656 2008-01-22
US12/286,959 US20090187701A1 (en) 2008-01-22 2008-10-03 Nand flash memory access with relaxed timing constraints
US12/286,959 2008-10-03

Publications (1)

Publication Number Publication Date
KR20100112110A true KR20100112110A (ko) 2010-10-18

Family

ID=40877343

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107009341A Ceased KR20100112110A (ko) 2008-01-22 2008-12-15 완화된 타이밍 제약을 갖는 ｎａｎｄ 플래시 메모리 액세스

Country Status (8)

Country Link
US (1) US20090187701A1 (https=)
EP (1) EP2245633A4 (https=)
JP (2) JP5379164B2 (https=)
KR (1) KR20100112110A (https=)
CN (1) CN101911208A (https=)
CA (1) CA2703674A1 (https=)
TW (1) TW200937425A (https=)
WO (1) WO2009092152A1 (https=)

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JP2013200830A (ja) 2012-03-26 2013-10-03 Toshiba Corp メモリシステム
US8804452B2 (en) * 2012-07-31 2014-08-12 Micron Technology, Inc. Data interleaving module
US9013930B2 (en) * 2012-12-20 2015-04-21 Winbond Electronics Corp. Memory device with interleaved high-speed reading function and method thereof
TWI493569B (zh) * 2013-03-25 2015-07-21 Winbond Electronics Corp 記憶體裝置以及由記憶體裝置中讀取資料之方法
CN104112471B (zh) * 2013-04-17 2017-12-15 华邦电子股份有限公司 存储器装置以及由存储器装置中读取数据的方法
TWI498905B (zh) * 2013-12-03 2015-09-01 Winbond Electronics Corp 非揮發性記憶體部份抹除方法
US9627031B1 (en) * 2016-03-11 2017-04-18 Mediatek Inc. Control methods and memory systems using the same

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KR0140179B1 (ko) * 1994-12-19 1998-07-15 김광호 불휘발성 반도체 메모리
KR100327330B1 (ko) * 1998-12-17 2002-05-09 윤종용 램버스디램반도체장치
US6467015B1 (en) * 1999-04-15 2002-10-15 Dell Products, L.P. High speed bus interface for non-volatile integrated circuit memory supporting continuous transfer
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP2003007052A (ja) * 2001-06-20 2003-01-10 Mitsubishi Electric Corp 半導体記憶装置およびそれを用いたメモリシステム
ITRM20010517A1 (it) * 2001-08-29 2003-02-28 Micron Technology Inc Struttura di condensatore integrato di polisilicio.
JP2003077276A (ja) * 2001-08-31 2003-03-14 Nec Corp 半導体メモリ
WO2003060722A1 (en) * 2002-01-09 2003-07-24 Renesas Technology Corp. Memory system and memory card
JP4074110B2 (ja) * 2002-03-20 2008-04-09 Ｎｅｃエレクトロニクス株式会社 シングルチップ・マイクロコンピュータ
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
KR100624960B1 (ko) * 2004-10-05 2006-09-15 에스티마이크로일렉트로닉스 엔.브이. 반도체 메모리 장치 및 이의 패키지 및 이를 이용한메모리 카드
JPWO2006051780A1 (ja) * 2004-11-10 2008-05-29 松下電器産業株式会社 不揮発性メモリ装置および不揮発性メモリ装置のアクセス方法
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JP4791806B2 (ja) * 2005-11-21 2011-10-12 株式会社東芝 半導体記憶装置及びそのデータ書き込み方法
US7366028B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation Method of high-performance flash memory data transfer
KR100694978B1 (ko) * 2006-05-12 2007-03-14 주식회사 하이닉스반도체 데이터 입출력 속도를 증가시키는 구조를 가지는 플래시메모리 장치 및 그 데이터 입출력 동작 방법
KR100765786B1 (ko) * 2006-06-12 2007-10-12 삼성전자주식회사 플래시 메모리 시스템, 그 프로그램을 위한 호스트 시스템및 프로그램 방법
KR100837273B1 (ko) * 2006-08-24 2008-06-12 삼성전자주식회사 플래시 메모리 장치
KR100764749B1 (ko) * 2006-10-03 2007-10-08 삼성전자주식회사 멀티-칩 패키지 플래시 메모리 장치 및 그것의 카피 백방법
KR100784865B1 (ko) * 2006-12-12 2007-12-14 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
CN101617371B (zh) * 2007-02-16 2014-03-26 莫塞德技术公司 具有多个外部电源的非易失性半导体存储器
KR100866961B1 (ko) * 2007-02-27 2008-11-05 삼성전자주식회사 불휘발성 메모리 장치 및 그 구동방법
TWI376603B (en) * 2007-09-21 2012-11-11 Phison Electronics Corp Solid state disk storage system with a parallel accessing architecture and a solid state disk controller

Also Published As

Publication number Publication date
EP2245633A2 (en) 2010-11-03
JP5379164B2 (ja) 2013-12-25
JP2014013642A (ja) 2014-01-23
EP2245633A4 (en) 2012-12-26
WO2009092152A8 (en) 2009-10-08
CA2703674A1 (en) 2009-07-30
WO2009092152A1 (en) 2009-07-30
CN101911208A (zh) 2010-12-08
JP2011510426A (ja) 2011-03-31
TW200937425A (en) 2009-09-01
US20090187701A1 (en) 2009-07-23

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