CN101911208A - 具有宽松时序约束的nand闪速存储器访问 - Google Patents

具有宽松时序约束的nand闪速存储器访问 Download PDF

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Publication number
CN101911208A
CN101911208A CN2008801231716A CN200880123171A CN101911208A CN 101911208 A CN101911208 A CN 101911208A CN 2008801231716 A CN2008801231716 A CN 2008801231716A CN 200880123171 A CN200880123171 A CN 200880123171A CN 101911208 A CN101911208 A CN 101911208A
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CN
China
Prior art keywords
flash memory
nand flash
data
buffer
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2008801231716A
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English (en)
Chinese (zh)
Inventor
金镇祺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
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Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of CN101911208A publication Critical patent/CN101911208A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G06F12/0607—Interleaved addressing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1041—Resource optimization
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1048—Scalability
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
CN2008801231716A 2008-01-22 2008-12-15 具有宽松时序约束的nand闪速存储器访问 Pending CN101911208A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2265608P 2008-01-22 2008-01-22
US61/022656 2008-01-22
US12/286959 2008-10-03
US12/286,959 US20090187701A1 (en) 2008-01-22 2008-10-03 Nand flash memory access with relaxed timing constraints
PCT/CA2008/002155 WO2009092152A1 (en) 2008-01-22 2008-12-15 Nand flash memory access with relaxed timing constraints

Publications (1)

Publication Number Publication Date
CN101911208A true CN101911208A (zh) 2010-12-08

Family

ID=40877343

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801231716A Pending CN101911208A (zh) 2008-01-22 2008-12-15 具有宽松时序约束的nand闪速存储器访问

Country Status (8)

Country Link
US (1) US20090187701A1 (https=)
EP (1) EP2245633A4 (https=)
JP (2) JP5379164B2 (https=)
KR (1) KR20100112110A (https=)
CN (1) CN101911208A (https=)
CA (1) CA2703674A1 (https=)
TW (1) TW200937425A (https=)
WO (1) WO2009092152A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104112471A (zh) * 2013-04-17 2014-10-22 华邦电子股份有限公司 存储器装置以及由存储器装置中读取数据的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2317442A1 (en) * 2009-10-29 2011-05-04 Thomson Licensing Solid state memory with reduced number of partially filled pages
JP5323170B2 (ja) * 2011-12-05 2013-10-23 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体メモリおよびそのデータの読出し方法
JP2013200830A (ja) 2012-03-26 2013-10-03 Toshiba Corp メモリシステム
US8804452B2 (en) * 2012-07-31 2014-08-12 Micron Technology, Inc. Data interleaving module
US9013930B2 (en) * 2012-12-20 2015-04-21 Winbond Electronics Corp. Memory device with interleaved high-speed reading function and method thereof
TWI493569B (zh) * 2013-03-25 2015-07-21 Winbond Electronics Corp 記憶體裝置以及由記憶體裝置中讀取資料之方法
TWI498905B (zh) * 2013-12-03 2015-09-01 Winbond Electronics Corp 非揮發性記憶體部份抹除方法
US9627031B1 (en) * 2016-03-11 2017-04-18 Mediatek Inc. Control methods and memory systems using the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0140179B1 (ko) * 1994-12-19 1998-07-15 김광호 불휘발성 반도체 메모리
KR100327330B1 (ko) * 1998-12-17 2002-05-09 윤종용 램버스디램반도체장치
US6467015B1 (en) * 1999-04-15 2002-10-15 Dell Products, L.P. High speed bus interface for non-volatile integrated circuit memory supporting continuous transfer
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP2003007052A (ja) * 2001-06-20 2003-01-10 Mitsubishi Electric Corp 半導体記憶装置およびそれを用いたメモリシステム
ITRM20010517A1 (it) * 2001-08-29 2003-02-28 Micron Technology Inc Struttura di condensatore integrato di polisilicio.
JP2003077276A (ja) * 2001-08-31 2003-03-14 Nec Corp 半導体メモリ
WO2003060722A1 (en) * 2002-01-09 2003-07-24 Renesas Technology Corp. Memory system and memory card
JP4074110B2 (ja) * 2002-03-20 2008-04-09 Ｎｅｃエレクトロニクス株式会社 シングルチップ・マイクロコンピュータ
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
KR100624960B1 (ko) * 2004-10-05 2006-09-15 에스티마이크로일렉트로닉스 엔.브이. 반도체 메모리 장치 및 이의 패키지 및 이를 이용한메모리 카드
JPWO2006051780A1 (ja) * 2004-11-10 2008-05-29 松下電器産業株式会社 不揮発性メモリ装置および不揮発性メモリ装置のアクセス方法
US20060171234A1 (en) * 2005-01-18 2006-08-03 Liu Skip S DDR II DRAM data path
US7149121B2 (en) * 2005-01-26 2006-12-12 Macronix International Co., Ltd. Method and apparatus for changing operating conditions of nonvolatile memory
US7495279B2 (en) * 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
KR100737913B1 (ko) * 2005-10-04 2007-07-10 삼성전자주식회사 반도체 메모리 장치의 읽기 방법
JP4791806B2 (ja) * 2005-11-21 2011-10-12 株式会社東芝 半導体記憶装置及びそのデータ書き込み方法
US7366028B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation Method of high-performance flash memory data transfer
KR100694978B1 (ko) * 2006-05-12 2007-03-14 주식회사 하이닉스반도체 데이터 입출력 속도를 증가시키는 구조를 가지는 플래시메모리 장치 및 그 데이터 입출력 동작 방법
KR100765786B1 (ko) * 2006-06-12 2007-10-12 삼성전자주식회사 플래시 메모리 시스템, 그 프로그램을 위한 호스트 시스템및 프로그램 방법
KR100837273B1 (ko) * 2006-08-24 2008-06-12 삼성전자주식회사 플래시 메모리 장치
KR100764749B1 (ko) * 2006-10-03 2007-10-08 삼성전자주식회사 멀티-칩 패키지 플래시 메모리 장치 및 그것의 카피 백방법
KR100784865B1 (ko) * 2006-12-12 2007-12-14 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
CN101617371B (zh) * 2007-02-16 2014-03-26 莫塞德技术公司 具有多个外部电源的非易失性半导体存储器
KR100866961B1 (ko) * 2007-02-27 2008-11-05 삼성전자주식회사 불휘발성 메모리 장치 및 그 구동방법
TWI376603B (en) * 2007-09-21 2012-11-11 Phison Electronics Corp Solid state disk storage system with a parallel accessing architecture and a solid state disk controller

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104112471A (zh) * 2013-04-17 2014-10-22 华邦电子股份有限公司 存储器装置以及由存储器装置中读取数据的方法

Also Published As

Publication number Publication date
EP2245633A2 (en) 2010-11-03
JP5379164B2 (ja) 2013-12-25
KR20100112110A (ko) 2010-10-18
JP2014013642A (ja) 2014-01-23
EP2245633A4 (en) 2012-12-26
WO2009092152A8 (en) 2009-10-08
CA2703674A1 (en) 2009-07-30
WO2009092152A1 (en) 2009-07-30
JP2011510426A (ja) 2011-03-31
TW200937425A (en) 2009-09-01
US20090187701A1 (en) 2009-07-23

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Ontario, Canada

Applicant after: Examine Vincent Zhi Cai management company

Address before: Ontario, Canada

Applicant before: Mosaid Technologies Inc.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: MOSAID TECHNOLOGIES INC. TO: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.

C05 Deemed withdrawal (patent law before 1993)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20101208