KR20080096510A - 반도체 장치 제조시의 국지적 어닐링 - Google Patents

반도체 장치 제조시의 국지적 어닐링 Download PDF

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Publication number
KR20080096510A
KR20080096510A KR1020087017343A KR20087017343A KR20080096510A KR 20080096510 A KR20080096510 A KR 20080096510A KR 1020087017343 A KR1020087017343 A KR 1020087017343A KR 20087017343 A KR20087017343 A KR 20087017343A KR 20080096510 A KR20080096510 A KR 20080096510A
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South Korea
Prior art keywords
semiconductor device
substrate
metal
electromagnetic radiation
layer
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Korean (ko)
Inventor
슈 유안
징 린
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팅기 테크놀러지스 프라이빗 리미티드
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Publication of KR20080096510A publication Critical patent/KR20080096510A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

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  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020087017343A 2005-12-20 2006-12-19 반도체 장치 제조시의 국지적 어닐링 Withdrawn KR20080096510A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG200508210-2 2005-12-20
SG200508210-2A SG133432A1 (en) 2005-12-20 2005-12-20 Localized annealing during semiconductor device fabrication

Publications (1)

Publication Number Publication Date
KR20080096510A true KR20080096510A (ko) 2008-10-30

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KR1020087017343A Withdrawn KR20080096510A (ko) 2005-12-20 2006-12-19 반도체 장치 제조시의 국지적 어닐링

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Country Link
US (1) US8329556B2 (https=)
JP (1) JP2009520376A (https=)
KR (1) KR20080096510A (https=)
CN (1) CN101410991B (https=)
SG (1) SG133432A1 (https=)
WO (1) WO2007073354A1 (https=)

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CN101410991A (zh) 2009-04-15
CN101410991B (zh) 2011-04-13
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