JP5073915B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP5073915B2 JP5073915B2 JP2003564914A JP2003564914A JP5073915B2 JP 5073915 B2 JP5073915 B2 JP 5073915B2 JP 2003564914 A JP2003564914 A JP 2003564914A JP 2003564914 A JP2003564914 A JP 2003564914A JP 5073915 B2 JP5073915 B2 JP 5073915B2
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- semiconductor layer
- substrate
- laser beam
- laser
- support plate
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- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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Description
a(Al203)=7.5*10−6K−1
を有するサファイア基板に対して、熱膨張係数aTがa(Al203)よりは下であるが、4.125*10−6K−1より大きい、殊に4.5*10−6K−1より大きい支持板材料が有利である。
a(GaN)=4.3*10−6K−1
を有するGaNベース形半導体層のような窒化化合物半導体層の解離の際には殊に、a(GaN)より大きいが、5.8*10−6K−1より小さい、殊に5.6*10−6K−1より小さい熱膨張係数aTを有する支持板材料が有利である。
a(Mo)=5.21*10−6K−1
は例えばa(GaAs)=6.4*10−6K−1を有するGaAsの熱膨張係数よりa(GaN)に著しく接近している。層列体モリブデン−ボンディングウェハ/GaN半導体層/サファイア基板の場合、上述したような、レーザ照射の際のクラック形成の問題は著しく低減されている。モリブデンは更に十分安定しているので、ボンディングの際またはボンディング温度から室温に冷却する際にクラックが生じない。
a(Fe−Ni−Co)=5.1*10−6K−1
を有している。
a(Wo)=4.7*10−6K−1
を有しているタングステンも支持板に対する有利な材料であることが認められている。一般に、金属の支持板材料はその粘り強さに基づいてボンディングプロセスの期間および室温への冷却の期間に極めてクラックし難いことが分かっている。
図1Aないし図1Eは、5つの中間工程に基づいて本発明の方法の第1実施例を略示し、
図2Aおよび図2Bはそれぞれ、本発明の方法の第2実施例の2つの変形形態を略示し、
図3Aおよび図3Bは、図2Aに図示の方法におけるレーザビームのビームプロフィールを略示し、
図4は、図2Aに図示の方法における結果生じる強度分布を略示し、
図5は、本発明の方法の第3実施例を略示し、
図6Aないし図6Cは、ガウス形状の強度分布が使用される場合の製造方法を略示し、
図7は、支持板におけるクラックの生成を説明するための略図であり、
図8は、半導体層におけるクラックの生成を説明するための略図である。
Claims (23)
- 半導体層(2)をレーザビーム(6)を用いた照射によって基板(1)から分離するという半導体素子の製造方法において、
基板(1)の分離の前に、半導体層(2)を基板(1)とは反対側で支持板(4)に被着させ、
前記レーザビーム(6)はパルス化されており、
支持板(4)はモリブデンまたはゲルマニウムから構成され、
基板(1)はサファイアから構成され、
半導体層(2)は複数の個別層から構成され、該個別層の少なくとも1つは、InxAlyGa1−x−yN(0≦x≦1,0≦y≦1およびx+y≦1)を含んでおり、
レーザビーム(6)は高原形状の空間的なビームプロフィール(7)を有している、
ことを特徴とする方法。 - 半導体層の、基板からの分離のために、レーザビームパルスの15nsより大きなパルス長を選択する
請求項1記載の方法。 - 半導体層の、基板からの分離のために、レーザビームパルスの15nsより小さなパルス長を選択する
請求項1記載の方法。 - 半導体層(2)を、金および/または錫またはパラジウムおよび/またはインジウムを含んでいるはんだを用いて支持板(4)にはんだ付けする
請求項1から3までのいずれか1項記載の方法。 - 半導体層(2)を支持板(4)に接続する前に、半導体層(2)の、支持板(4)とは反対の側に金属化部を被着する
請求項1から4までのいずれか1項記載の方法。 - 金属化部は金および/または白金を含んでいる
請求項5記載の方法。 - 個別層の少なくとも1つは、GaN,AlGaN,InGaN,AlInGaN,AlNまたはInNを含んでいる
請求項1から6までのいずれか1項記載の方法。 - 半導体層(2)をエピタキシー方法を用いて基板(1)に被着する
請求項1から7までのいずれか1項記載の方法。 - 半導体層(2)は、50μmより小さいかまたはそれに等しい厚さを有している
請求項1から8までのいずれか1項記載の方法。 - 半導体素子は光電素子である
請求項1から9までのいずれか1項記載の方法。 - 半導体素子はLEDまたはレーザダイオードである
請求項10記載の方法。 - レーザビーム(6)をエキシマレーザによって生成する
請求項1から11までのいずれか1項記載の方法。 - エキシマレーザはレーザ活性媒体として希ガス−ハロゲン化合物を含んでいる
請求項12記載の方法。 - エキシマレーザはレーザ活性媒体としてXeF、XeBr、XeCl、KrClまたはKrFを含んでいる
請求項13記載の方法。 - レーザビーム(6)は矩形形状または台形形状の空間的なビームプロフィールを有している
請求項1から14までのいずれか1項記載の方法。 - レーザビーム(6)をレーザによってパルス作動において生成する
請求項1から15までのいずれか1項記載の方法。 - レーザビーム(6)の波長は200nmと400nmとの間にある
請求項1から16までのいずれか1項記載の方法。 - レーザビーム(6)は、照射される領域内でレーザビーム(6)によって生成されるエネルギー密度が100mJ/cm2と1000mJ/cm2との間にあるように、半導体層(2)に集束する
請求項1から17までのいずれか1項記載の方法。 - レーザビーム(6)によって生成されるエネルギー密度が150mJ/cm2と800mJ/cm2との間にある
請求項18記載の方法。 - 半導体層(2)の複数の個別領域(8)を順次照射する
請求項1から19までのいずれか1項記載の方法。 - 個別領域(8)は、照射される半導体層(2)の主要な部分に対して時間的に積分されて空間的に近似的に一定の強度分布(10)が生じるように面を充填して配置されている
請求項20記載の方法。 - レーザビーム(6)は半導体層(2)のところで、長手方向寸法(a)および横断方向寸法(b)を有するビーム面を有しており、ここで長手方向寸法(a)は横断方向寸法(b)より大きく、かつ
半導体層(2)は横断方向寸法(b)の方向に沿った照射の期間にレーザビーム(6)に対して相対的に移動される
請求項1から21までのいずれか1項記載の方法。 - 基板(1)はレーザビーム(6)に対して少なくとも部分的に透過性でありかつ
半導体層(2)を基板(1)を通して照射する
請求項1から22までのいずれか1項記載の方法。
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DE10203795.7A DE10203795B4 (de) | 2002-01-31 | 2002-01-31 | Verfahren zur Herstellung eines Halbleiterbauelements |
DE10203795.7 | 2002-01-31 | ||
DE10243757.2 | 2002-09-20 | ||
DE10243757A DE10243757A1 (de) | 2002-01-31 | 2002-09-20 | Verfahren zur Herstellung von Halbleiterchips |
PCT/DE2003/000260 WO2003065420A2 (de) | 2002-01-31 | 2003-01-30 | Verfahren zur herstellung eines halbleiterbauelements |
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US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
CN100595938C (zh) | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
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US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
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US20120040484A1 (en) | 2012-02-16 |
EP1470573A2 (de) | 2004-10-27 |
US20050239270A1 (en) | 2005-10-27 |
US8598014B2 (en) | 2013-12-03 |
US20090311847A1 (en) | 2009-12-17 |
EP1470573B1 (de) | 2020-07-01 |
TWI226139B (en) | 2005-01-01 |
US8575003B2 (en) | 2013-11-05 |
JP2005516415A (ja) | 2005-06-02 |
WO2003065420A3 (de) | 2004-07-08 |
WO2003065420A2 (de) | 2003-08-07 |
TW200305293A (en) | 2003-10-16 |
US7588998B2 (en) | 2009-09-15 |
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